Liesbeth Witters

3.0k citations

148 papers · 1.7k indexed · h-index 22

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 121
- Advancements in Semiconductor Devices and Circuit Design 115
- Integrated Circuits and Semiconductor Failure Analysis 39
- Ferroelectric and Negative Capacitance Devices 23
- Photonic and Optical Devices 11
- 3D IC and TSV technologies 10
Biomedical Engineering top 10%
- Nanowire Synthesis and Applications 25
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 12
Structural Biology
Hardware and Architecture top 10%

Co-authors: Jérôme Mitard Nadine Collaert Roger Loo J. Franco B. Kaczer G. Groeseneken Naoto Horiguchi Tibor Grasser
Cited by: Electrical and Electronic Engineering Biomedical Engineering Atomic and Molecular Physics, and Optics
Journals: IEEE Transactions on Electron Devices (12 papers)Solid-State Electronics (4 papers)IEEE Transactions on Device and Materials Reliability (4 papers)
Partner nations: Belgium United States Austria

In The Last Decade

Liesbeth Witters

143 papers receiving 1.7k citations

Peers

Countries citing papers authored by Liesbeth Witters

Since Specialization

Citations

This map shows the geographic impact of Liesbeth Witters's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Liesbeth Witters with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Liesbeth Witters more than expected).

Fields of papers citing papers by Liesbeth Witters

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Liesbeth Witters. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Liesbeth Witters. The network helps show where Liesbeth Witters may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Liesbeth Witters, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Liesbeth Witters Line = papers co-authored together Liesbeth Witters links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Backside Power Delivery With Relaxed Overlay for Backside Patterning Using Extreme Wafer Thinning and Molybdenum-Filled Slit Nano Through Silicon Vias IEEE Transactions on Electron Devices ·Peng Zhao,Liesbeth Witters,Anne Jourdain,Michele Stucchi,N. Jourdan,Jan Willem Maes,Francesca Scilla Smith,Lajos Hanzo,Aisya Putri Hariantika,Farid Sebaai,K. Vandersmissen,N. Heylen,T K Kumara,A. M. Elliott,C. F. Brennan,Filip Schleicher,Joeri De Vos,Gerald Beyer,Andy Miller,Eric Beyne	2024	2
2	Low temperature epitaxial growth of Ge:B and Ge _0.99 Sn _0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment Japanese Journal of Applied Physics ·Anurag Vohra,Clément Porret,David Kohen,Laura Stefanny Martínez Coral,Limin Xiao,Marc Schaekers,John Tolle,Andriy Hikavyy,E. Capogreco,Liesbeth Witters,R. Langer,Wilfried Vandervorst,Roger Loo	2019	11
3	Observation of Plasma-Induced Damage in Bulk Germanium ${p}$ -Type FinFET Devices and Curing in High-Pressure Anneal IEEE Transactions on Device and Materials Reliability ·Gaspard Hiblot,Hiroaki Arimura,Liesbeth Witters,綾子金子,方振平,Jérôme Mitard,Naoto Horiguchi,Nadine Collaert,Geert Van der Plas	2019	6
4	Record Gm_SAT/SS_SAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation IEEE Transactions on Electron Devices ·Hiroaki Arimura,Harold Dekkers,Lars‐Åke Ragnarsson,Jérôme Mitard,V. De Heyn,D. Mocuta,Nadine Collaert,Naoto Horiguchi,Daire Cott,G. Boccardi,Roger Loo,Kurt Wostyn,Liesbeth Witters,Thierry Conard,Samuel Suhard,Dennis H. van Dorp	2019	4
5	TEM investigations of gate-all-around nanowire devices Semiconductor Science and Technology ·Paola Favia,Olivier Richard,Geert Eneman,Hans Mertens,Hiroaki Arimura,E. Capogreco,Andriy Hikavyy,Liesbeth Witters,Paromita Kundu,Roger Loo,E. Vancoille,H. Bender	2019	8
6	Superior NBTI in High-k SiGe Transistors–Part II: Theory IEEE Transactions on Electron Devices ·Michael Waltl,G. Rzepa,Alexander Grill,Wolfgang Goes,J. Franco,B. Kaczer,Liesbeth Witters,Jérôme Mitard,Naoto Horiguchi,Tibor Grasser	2017	13
7	Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental IEEE Transactions on Electron Devices ·Michael Waltl,G. Rzepa,Alexander Grill,Wolfgang Goes,J. Franco,B. Kaczer,Liesbeth Witters,Jérôme Mitard,Naoto Horiguchi,Tibor Grasser	2017	20
8	Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures Nanotechnology ·Andreas Schulze,Roger Loo,Paul Ryan,Matthew Wormington,Paola Favia,Liesbeth Witters,Nadine Collaert,H. Bender,Wilfried Vandervorst,Matty Caymax	2017	9
9	Patterning challenges in advanced device architectures: FinFETs to nanowires Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Naoto Horiguchi,Alexey Milenin,V.S. Krasjuk,Kiyama Ryoji,Efrain Altamirano Sánchez,A. Veloso,Liesbeth Witters,Niamh Waldron,H. Hougaard,Isabelle S. Robert,Y. Kikuchi,Hans Mertens,Preethi Raghavan,John M. Drake,Nadine Collaert,K. Barla	2016	4
10	Si-passivated Ge nFET towards a reliable Ge CMOS Hiroaki Arimura,Sonja Sioncke,Daire Cott,Jérôme Mitard,Wendy Vanherle,Roger Loo,J. Franco,Thierry Conard,Paola Favia,H. Bender,Liesbeth Witters,Hans Mertens,L.-Å. Ragnarsson,G. Pourtois,Marc Heyns,A. Mocuta,Aaron Thean,D. Mocuta,Nadine Collaert	2016	1
11	Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation Hiroaki Arimura,Sonja Sioncke,Daire Cott,Jérôme Mitard,Thierry Conard,Wendy Vanherle,Roger Loo,Paola Favia,H. Bender,Johan Meersschaut,Liesbeth Witters,Hans Mertens,J. Franco,Lars‐Åke Ragnarsson,Geoffrey Pourtois,Marc Heyns,A. Mocuta,Nadine Collaert,Aaron Thean	2015	27
12	BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities G. Groeseneken,J. Franco,M. Cho,B. Kaczer,M. Toledano-Luque,Ph. Roussel,T. Kauerauf,A. Alian,Jérôme Mitard,Hiroaki Arimura,Dennis Lin,Niamh Waldron,Sonja Sioncke,Liesbeth Witters,Hans Mertens,Lars‐Åke Ragnarsson,Marc Heyns,Nadine Collaert,Aaron Thean,An Steegen	2014	30
13	Floating body retention analysis for 1T-DRAM M. Aoulaiche,Eddy Simoen,Liesbeth Witters,Cor Claeys,M. Jurczak,D Zdravkovic,Bad Oeyn- Hausen,Mari Kondo,C. Caillat,P. Fazan	2013	1
14	Selective Growth of Strained Ge Channel on Relaxed SiGe Buffer in Shallow Trench Isolation for High Mobility Ge Planar and Fin p-FET ECS Transactions ·Benjamin Vincent,Liesbeth Witters,Olivier Richard,Andriy Hikavyy,H. Bender,Roger Loo,Matty Caymax,Aaron Thean	2013	20
15	ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling Electrical Overstress/Electrostatic Discharge Symposium ·Geert Hellings,Dimitri Linten,S. Thijs,Shih‐Hung Chen,Liesbeth Witters,Jérôme Mitard,Odysseas Zografos,G. Groeseneken	2012	5
16	Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs J. Franco,B. Kaczer,M. Toledano-Luque,Ph. Roussel,Jérôme Mitard,L.-Å. Ragnarsson,Liesbeth Witters,T. Chiarella,M. Togo,Naoto Horiguchi,G. Groeseneken,G. Indruska,Tibor Grasser,Asen Asenov	2012	75
17	Ge- and III/V-CMP for Integration of High Mobility Channel Materials ECS Transactions ·Patrick Ong,Liesbeth Witters,Niamh Waldron,Leonardus H. A. Leunissen	2011	13
18	Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Solid-State Electronics ·T. Chiarella,Liesbeth Witters,A. Mercha,C. Kerner,Michał Rakowski,C. Ortolland,(unknown),Bertrand Parvais,A. De Keersgieter,Stefan Kubicek,A. Redolfi,C. Vrancken,S. Brus,A. Lauwers,P. Absil,S. Biesemans,Thomas Hoffmann	2010	99
19	The device architecture dilemma for CMOS technologies: Opportunities & challenges of finFET over planar MOSFET VUBIR (Vrije Universiteit Brussel) ·Bertrand Parvais,A. Mercha,Nadine Collaert,R. Rooyackers,Isabelle Ferain,M. Jurczak,Vaidyanathan Subramanian,A. De Keersgieter,T. Chiarella,C. Kerner,Liesbeth Witters,S. Biesemans,T. Hoffman	2009	29
20	Requirements on CD and overlay for 200 GHz QSA SiGe:C HBTs Remigiusz Denda,Liesbeth Witters,Stefaan Van Huylenbroeck,Philippe Leray,胡小岩,E. Kunnen,Stefaan Decoutere	2004	1

About Liesbeth Witters

Liesbeth Witters is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Structural Biology, Atomic and Molecular Physics, and Optics and Ceramics and Composites, having authored 148 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (121 papers), Advancements in Semiconductor Devices and Circuit Design (115 papers), Integrated Circuits and Semiconductor Failure Analysis (39 papers), Nanowire Synthesis and Applications (25 papers), Ferroelectric and Negative Capacitance Devices (23 papers), Semiconductor Quantum Structures and Devices (12 papers), Photonic and Optical Devices (11 papers) and 3D IC and TSV technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Biomedical Engineering (326 citations), Atomic and Molecular Physics, and Optics (226 citations), Structural Biology (9 citations) and Hardware and Architecture (31 citations). Liesbeth Witters has collaborated with scholars based in Belgium, United States and Austria. Frequent co-authors include Jérôme Mitard, Nadine Collaert, Roger Loo, J. Franco, B. Kaczer, G. Groeseneken, Naoto Horiguchi, Tibor Grasser, Andriy Hikavyy and Geert Eneman. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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