Dennis Lin

2.8k total citations
125 papers, 2.0k citations indexed

About

Dennis Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Dennis Lin has authored 125 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 106 papers in Electrical and Electronic Engineering, 59 papers in Materials Chemistry and 27 papers in Biomedical Engineering. Recurrent topics in Dennis Lin's work include Semiconductor materials and devices (67 papers), Advancements in Semiconductor Devices and Circuit Design (54 papers) and 2D Materials and Applications (38 papers). Dennis Lin is often cited by papers focused on Semiconductor materials and devices (67 papers), Advancements in Semiconductor Devices and Circuit Design (54 papers) and 2D Materials and Applications (38 papers). Dennis Lin collaborates with scholars based in Belgium, United States and Singapore. Dennis Lin's co-authors include Iuliana Radu, Matty Caymax, Inge Asselberghs, Guy Brammertz, A. Alian, Yashwanth Balaji, Marc Heyns, Annelies Delabie, Francky Catthoor and Quentin Smets and has published in prestigious journals such as Nature Materials, ACS Nano and Applied Physics Letters.

In The Last Decade

Dennis Lin

121 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dennis Lin Belgium 26 1.7k 963 362 321 103 125 2.0k
Lene Gammelgaard Denmark 16 493 0.3× 947 1.0× 358 1.0× 450 1.4× 85 0.8× 31 1.2k
H.‐H. Tseng United States 22 1.6k 1.0× 442 0.5× 195 0.5× 431 1.3× 113 1.1× 58 1.7k
Matthew R. Rosenberger United States 17 576 0.3× 998 1.0× 246 0.7× 320 1.0× 90 0.9× 39 1.2k
K. Cherkaoui Ireland 24 1.7k 1.0× 597 0.6× 185 0.5× 571 1.8× 119 1.2× 128 1.8k
M. I. Vexler Russia 14 1.0k 0.6× 960 1.0× 199 0.5× 212 0.7× 152 1.5× 91 1.5k
Yonder Berencén Germany 19 806 0.5× 763 0.8× 317 0.9× 261 0.8× 161 1.6× 80 1.1k
Alberto Ciarrocchi Switzerland 8 817 0.5× 1.3k 1.3× 185 0.5× 344 1.1× 116 1.1× 11 1.5k
Chris Breslin United States 15 1.0k 0.6× 701 0.7× 588 1.6× 363 1.1× 115 1.1× 22 1.4k
J. Kavalieros United States 27 3.3k 2.0× 688 0.7× 973 2.7× 547 1.7× 88 0.9× 41 3.6k
Vaidotas Mišeikis Italy 19 607 0.4× 914 0.9× 472 1.3× 400 1.2× 130 1.3× 65 1.3k

Countries citing papers authored by Dennis Lin

Since Specialization
Citations

This map shows the geographic impact of Dennis Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dennis Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dennis Lin more than expected).

Fields of papers citing papers by Dennis Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dennis Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dennis Lin. The network helps show where Dennis Lin may publish in the future.

Co-authorship network of co-authors of Dennis Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Dennis Lin. A scholar is included among the top collaborators of Dennis Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dennis Lin. Dennis Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, Dennis, Subhali Subhechha, Adrian Chasin, et al.. (2025). The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs. IEEE Electron Device Letters. 46(5). 761–764.
2.
Iakoubovskii, Konstantin, et al.. (2025). Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects. Journal of Applied Physics. 137(24). 1 indexed citations
3.
Cott, Daire, Benjamin Groven, Stefanie Sergeant, et al.. (2024). Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(6).
4.
Minj, Albert, Ankit Nalin Mehta, Thomas Hantschel, et al.. (2024). Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements. ACS Nano. 18(15). 10653–10666. 2 indexed citations
5.
Wu, Xiangyu, Daire Cott, Yuanyuan Shi, et al.. (2024). Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides. ACS Applied Electronic Materials. 6(6). 4213–4222. 4 indexed citations
6.
Lin, Dennis, et al.. (2024). Evaluation of a Plasmon-Based Optical Integrated Circuit for Error-Tolerant Streaming Applications. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 10. 170–177.
7.
Minj, Albert, Henry Medina, Benjamin Groven, et al.. (2023). Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates. Solid-State Electronics. 209. 108781–108781. 1 indexed citations
8.
Iakoubovskii, Konstantin, Abhinav Gaur, Dennis Lin, et al.. (2021). Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra. Journal of Applied Physics. 129(15). 8 indexed citations
9.
Shi, Yuanyuan, Benjamin Groven, Xiangyu Wu, et al.. (2021). Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics. ACS Nano. 15(6). 9482–9494. 38 indexed citations
10.
Marinov, Daniil, Jean‐François de Marneffe, Quentin Smets, et al.. (2021). Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers. npj 2D Materials and Applications. 5(1). 35 indexed citations
11.
Lin, Dennis, Xiangyu Wu, Daire Cott, et al.. (2021). Scaling synthetic WS2 dual-gate MOS devices towards sub-nm CET. Symposium on VLSI Technology. 1–2. 2 indexed citations
12.
Smets, Quentin, Goutham Arutchelvan, T. Schram, et al.. (2021). Extreme scaling enabled by MX2 transistors: variability challenges (invited). 1–2. 2 indexed citations
13.
Reynaert, Patrick, et al.. (2020). Modeling and Optimization of Plasmonic Detectors for Beyond-CMOS Plasmonic Majority Logic Gates. Journal of Lightwave Technology. 38(18). 5092–5099. 5 indexed citations
14.
Leonhardt, Alessandra, Devin Verreck, Inge Asselberghs, et al.. (2020). Understanding ambipolar transport in MoS 2 field effect transistors: the substrate is the key. Nanotechnology. 32(13). 135202–135202. 21 indexed citations
15.
Balaji, Yashwanth, Quentin Smets, Dennis Lin, et al.. (2019). Tunnel FETs using Phosphorene/ReS 2 heterostructures. IEEE Conference Proceedings. 2019. 113–114. 1 indexed citations
16.
Li, Yida, A. Alian, Maheswari Sivan, et al.. (2019). A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications. APL Materials. 7(3). 16 indexed citations
17.
Resta, Giovanni V., Yashwanth Balaji, Dennis Lin, et al.. (2018). Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors. ACS Nano. 12(7). 7039–7047. 129 indexed citations
18.
Sutar, Surajit, Inge Asselberghs, Dennis Lin, Aaron Thean, & Iuliana Radu. (2017). FETs on 2-D Materials: Deconvolution of the Channel and Contact Characteristics by Four-Terminal Resistance Measurements on WSe2Transistors. IEEE Transactions on Electron Devices. 64(7). 2970–2976. 4 indexed citations
19.
Mongillo, Massimo, Daniele Chiappe, Goutham Arutchelvan, et al.. (2016). Transport properties of chemically synthesized MoS2 – Dielectric effects and defects scattering. Applied Physics Letters. 109(23). 11 indexed citations
20.
Wu, Xiangyu, Bart Sorée, Cedric Huyghebaert, et al.. (2016). Multi-layer graphene interconnect - a feasibility study. 200–202. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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