A. Mocuta

3.4k total citations
117 papers, 2.2k citations indexed

About

A. Mocuta is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A. Mocuta has authored 117 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 114 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 7 papers in Biomedical Engineering. Recurrent topics in A. Mocuta's work include Semiconductor materials and devices (106 papers), Advancements in Semiconductor Devices and Circuit Design (98 papers) and Integrated Circuits and Semiconductor Failure Analysis (33 papers). A. Mocuta is often cited by papers focused on Semiconductor materials and devices (106 papers), Advancements in Semiconductor Devices and Circuit Design (98 papers) and Integrated Circuits and Semiconductor Failure Analysis (33 papers). A. Mocuta collaborates with scholars based in Belgium, United States and Singapore. A. Mocuta's co-authors include Diederik Verkest, P. Schuddinck, Doyoung Jang, Dmitry Yakimets, M. Garcia Bardon, A. Spessot, Naoto Horiguchi, Aaron Thean, Nadine Collaert and Julien Ryckaert and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

A. Mocuta

114 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Mocuta Belgium 24 2.1k 341 244 214 83 117 2.2k
C.H. Diaz Taiwan 27 2.1k 1.0× 332 1.0× 235 1.0× 192 0.9× 83 1.0× 109 2.2k
G. Shahidi United States 22 1.9k 0.9× 294 0.9× 199 0.8× 139 0.6× 111 1.3× 104 2.0k
Pin Su Taiwan 24 2.0k 1.0× 189 0.6× 129 0.5× 282 1.3× 64 0.8× 224 2.1k
A. Asenov United Kingdom 25 2.4k 1.1× 259 0.8× 333 1.4× 123 0.6× 168 2.0× 156 2.5k
M.D. Giles United States 19 1.5k 0.7× 312 0.9× 387 1.6× 425 2.0× 86 1.0× 68 1.8k
Corrado Carta Germany 22 2.0k 0.9× 541 1.6× 165 0.7× 162 0.8× 34 0.4× 239 2.1k
A. Spessot Belgium 19 1.5k 0.7× 223 0.7× 153 0.6× 159 0.7× 118 1.4× 113 1.6k
Digh Hisamoto Japan 20 3.0k 1.4× 575 1.7× 297 1.2× 366 1.7× 75 0.9× 85 3.1k
Tomohisa Mizuno Japan 22 2.1k 1.0× 608 1.8× 263 1.1× 278 1.3× 66 0.8× 126 2.2k
Takuya Saraya Japan 21 1.6k 0.8× 294 0.9× 187 0.8× 391 1.8× 50 0.6× 192 1.7k

Countries citing papers authored by A. Mocuta

Since Specialization
Citations

This map shows the geographic impact of A. Mocuta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Mocuta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Mocuta more than expected).

Fields of papers citing papers by A. Mocuta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Mocuta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Mocuta. The network helps show where A. Mocuta may publish in the future.

Co-authorship network of co-authors of A. Mocuta

This figure shows the co-authorship network connecting the top 25 collaborators of A. Mocuta. A scholar is included among the top collaborators of A. Mocuta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Mocuta. A. Mocuta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xiang, Yang, Anne S. Verhulst, Dmitry Yakimets, et al.. (2019). Process-Induced Power-Performance Variability in Sub-5-nm III–V Tunnel FETs. IEEE Transactions on Electron Devices. 66(6). 2802–2808. 2 indexed citations
2.
Huynh-Bao, Trong, A. Veloso, Philippe Matagne, et al.. (2019). Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications. 1–6. 5 indexed citations
3.
Debacker, Peter, et al.. (2019). CFET standard-cell design down to 3Track height for node 3nm and below. 5–5. 13 indexed citations
4.
Raghavan, Praveen, Diederik Verkest, A. Mocuta, et al.. (2018). Track height reduction for standard-cell in below 5nm node: how low can you go?. 15. 8–8. 7 indexed citations
5.
Kikuchi, Yoshiaki, A. Peter, A. De Keersgieter, et al.. (2018). Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 36(6).
6.
Ryckaert, Julien, P. Schuddinck, Pieter Weckx, et al.. (2018). The Complementary FET (CFET) for CMOS scaling beyond N3. 141–142. 147 indexed citations
7.
Weckx, Pieter, Marko Simicic, Kazumasa Nomoto, et al.. (2017). Defect-based compact modeling for RTN and BTI variability. CR–7.1. 18 indexed citations
8.
Bufler, F. M., Geert Eneman, Nadine Collaert, & A. Mocuta. (2017). Monte Carlo benchmark of Ino.53Gao.47As-and Silicon-FinFETs. 62. 13.3.1–13.3.4. 3 indexed citations
9.
Vais, Abhitosh, J. Franco, Koen Martens, et al.. (2017). A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET. IEEE Electron Device Letters. 38(3). 318–321. 12 indexed citations
10.
Yakimets, Dmitry, M. Garcia Bardon, Doyoung Jang, et al.. (2017). Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology. 20.4.1–20.4.4. 84 indexed citations
11.
Yu, Hao, Marc Schaekers, Geoffrey Pourtois, et al.. (2016). Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2. IEEE Transactions on Electron Devices. 63(12). 4632–4641. 47 indexed citations
12.
Franco, J., Subhadeep Mukhopadhyay, Pieter Weckx, et al.. (2016). Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. HAL (Le Centre pour la Communication Scientifique Directe). 15.3.1–15.3.4. 12 indexed citations
13.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2016). Si-passivated Ge nFET towards a reliable Ge CMOS. 1 indexed citations
14.
Eneman, Geert, Anne S. Verhulst, A. De Keersgieter, et al.. (2016). Band-to-band tunneling off-state leakage in Ge fins and nanowires: Effect of quantum confinement. 12. 27–30. 1 indexed citations
15.
Kikuchi, Yoshiaki, T. Chiarella, David De Roest, et al.. (2016). Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass. IEEE Electron Device Letters. 37(9). 1084–1087. 4 indexed citations
16.
Smets, Quentin, Anne S. Verhulst, Salim El Kazzi, et al.. (2016). Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction. IEEE Transactions on Electron Devices. 63(11). 4248–4254. 27 indexed citations
17.
Verhulst, Anne S., Devin Verreck, Maarten L. Van de Put, et al.. (2016). Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides. Journal of Applied Physics. 120(24). 7 indexed citations
18.
Thean, A. V-Y., Dmitry Yakimets, Trong Huynh-Bao, et al.. (2015). Vertical device architecture for 5nm and beyond: Device & circuit implications. T26–T27. 40 indexed citations
19.
Verreck, Devin, Anne S. Verhulst, Bart Sorée, et al.. (2014). Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic. Applied Physics Letters. 105(24). 14 indexed citations
20.
Yu, Xiaojun, et al.. (2012). Accurate chip leakage prediction: Challenges and solutions. 191–192.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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