E. Capogreco

551 total citations
26 papers, 204 citations indexed

About

E. Capogreco is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Computer Networks and Communications. According to data from OpenAlex, E. Capogreco has authored 26 papers receiving a total of 204 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 3 papers in Computer Networks and Communications. Recurrent topics in E. Capogreco's work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). E. Capogreco is often cited by papers focused on Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). E. Capogreco collaborates with scholars based in Belgium, United States and Chile. E. Capogreco's co-authors include A. Arreghini, G. Van den bosch, Jan Van Houdt, J. G. Lisoni, Andriy Hikavyy, R. Degraeve, Hiroaki Arimura, Naoto Horiguchi, M. Toledano-Luque and Roger Loo and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Semiconductor Science and Technology.

In The Last Decade

E. Capogreco

22 papers receiving 196 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Capogreco Belgium 11 199 41 30 28 20 26 204
Patrick Kempf Canada 7 186 0.9× 17 0.4× 37 1.2× 28 1.0× 19 0.9× 16 200
D. Park South Korea 11 257 1.3× 66 1.6× 31 1.0× 21 0.8× 11 0.6× 20 278
Matthieu Berthomé Switzerland 7 358 1.8× 37 0.9× 160 5.3× 19 0.7× 23 1.1× 11 402
Nathan Abrams United States 9 361 1.8× 16 0.4× 20 0.7× 15 0.5× 88 4.4× 22 379
Sun Il Shim South Korea 5 85 0.4× 25 0.6× 7 0.2× 27 1.0× 10 0.5× 11 97
N. Arai Japan 9 230 1.2× 42 1.0× 12 0.4× 45 1.6× 12 0.6× 28 242
Simon Poole Australia 8 336 1.7× 27 0.7× 6 0.2× 24 0.9× 45 2.3× 19 357
S. Locorotondo Belgium 10 266 1.3× 11 0.3× 51 1.7× 33 1.2× 51 2.5× 19 269
A. Subirats Belgium 13 576 2.9× 45 1.1× 15 0.5× 164 5.9× 15 0.8× 33 589
Fabien Deprat France 7 160 0.8× 19 0.5× 10 0.3× 26 0.9× 23 1.1× 19 171

Countries citing papers authored by E. Capogreco

Since Specialization
Citations

This map shows the geographic impact of E. Capogreco's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Capogreco with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Capogreco more than expected).

Fields of papers citing papers by E. Capogreco

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Capogreco. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Capogreco. The network helps show where E. Capogreco may publish in the future.

Co-authorship network of co-authors of E. Capogreco

This figure shows the co-authorship network connecting the top 25 collaborators of E. Capogreco. A scholar is included among the top collaborators of E. Capogreco based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Capogreco. E. Capogreco is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ritzenthaler, R., Pierre Eyben, Kiroubanand Sankaran, et al.. (2024). Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor. 1–4.
2.
3.
Spessot, A., Philippe Matagne, Hiroaki Arimura, et al.. (2024). Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down >35 V for 3D NAND flash periphery application. Japanese Journal of Applied Physics. 63(3). 03SP12–03SP12.
4.
Bastos, João P. A., Barry O’Sullivan, J. Franco, et al.. (2022). Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. 1–6. 4 indexed citations
5.
Spessot, A., R. Ritzenthaler, E. Dentoni Litta, et al.. (2021). 80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications. Japanese Journal of Applied Physics. 60(SB). SBBB06–SBBB06. 7 indexed citations
6.
Arimura, Hiroaki, E. Capogreco, Anurag Vohra, et al.. (2020). Toward high-performance and reliable Ge channel devices for 2 nm node and beyond. 2.1.1–2.1.4. 15 indexed citations
7.
Arimura, Hiroaki, E. Capogreco, Kurt Wostyn, et al.. (2020). Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-Cap-Free Gate Stack and Optimizing the Channel Strain. 1–2. 5 indexed citations
8.
Vohra, Anurag, Clément Porret, David Kohen, et al.. (2019). Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. Japanese Journal of Applied Physics. 58(SB). SBBA04–SBBA04. 11 indexed citations
9.
Favia, Paola, Olivier Richard, Geert Eneman, et al.. (2019). TEM investigations of gate-all-around nanowire devices. Semiconductor Science and Technology. 34(12). 124003–124003. 8 indexed citations
10.
Tyaginov, Stanislav, Al-Moatasem El-Sayed, Alexander Makarov, et al.. (2019). Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs. 21.3.1–21.3.4. 8 indexed citations
11.
Vohra, Anurag, Clément Porret, Erik Rosseel, et al.. (2019). Source/Drain Materials for Ge nMOS Devices. ECS Transactions. 93(1). 29–33. 1 indexed citations
12.
Arimura, Hiroaki, Kurt Wostyn, L.-Å. Ragnarsson, et al.. (2019). Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si. 29.2.1–29.2.4. 9 indexed citations
13.
Arimura, Hiroaki, Geert Eneman, E. Capogreco, et al.. (2018). Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET. 21.2.1–21.2.4. 16 indexed citations
14.
Subirats, A., A. Arreghini, E. Capogreco, et al.. (2017). Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND. 21.2.1–21.2.4. 16 indexed citations
15.
Celano, Umberto, E. Capogreco, J. G. Lisoni, et al.. (2016). Direct three-dimensional observation of the conduction in poly-Si and In<inf>1−x</inf>Ga<inf>x</inf>As 3D NAND vertical channels. 1–2. 4 indexed citations
16.
Capogreco, E., A. Subirats, J. G. Lisoni, et al.. (2016). Feasibility of In<italic>x</italic>Ga1–<italic>x</italic>As High Mobility Channel for 3-D NAND Memory. IEEE Transactions on Electron Devices. 64(1). 130–136. 11 indexed citations
17.
Capogreco, E., R. Degraeve, J. G. Lisoni, et al.. (2015). Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications. 1–4. 11 indexed citations
18.
Capogreco, E., J. G. Lisoni, A. Arreghini, et al.. (2015). MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory. 3.1.1–3.1.4. 13 indexed citations
19.
Congedo, G., A. Arreghini, Li Liu, et al.. (2014). Analysis of performance/variability trade-off in Macaroni-type 3-D NAND memory. 1–4. 19 indexed citations
20.
Degraeve, R., M. Toledano-Luque, A. Arreghini, et al.. (2013). Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model. 21.2.1–21.2.4. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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