A. Veloso

3.9k citations

219 papers · 2.3k indexed · h-index 23

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics top 5%
- Magnetic properties of thin films
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 203
- Semiconductor materials and devices 186
- Advancements in Semiconductor Devices and Circuit Design 173
- Integrated Circuits and Semiconductor Failure Analysis 67
- Ferroelectric and Negative Capacitance Devices 34
- Silicon Carbide Semiconductor Technologies 18
Atomic and Molecular Physics, and Optics 42
- Semiconductor materials and interfaces 23
- Magnetic properties of thin films 13

Co-authors: Eddy Simoen Nadine Collaert P. P. Freitas Naoto Horiguchi G. Groeseneken M. Jurczak S. Biesemans Trong Huynh-Bao
Journals: Solid-State Electronics (24 papers)IEEE Transactions on Electron Devices (15 papers)Microelectronic Engineering (13 papers)IEEE Electron Device Letters (12 papers)Journal of Applied Physics (5 papers)
Partner nations: Belgium Brazil France

In The Last Decade

A. Veloso

207 papers receiving 2.2k citations

Peers

Countries citing papers authored by A. Veloso

Since Specialization

Citations

This map shows the geographic impact of A. Veloso's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Veloso with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Veloso more than expected).

Fields of papers citing papers by A. Veloso

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Veloso. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Veloso. The network helps show where A. Veloso may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Veloso, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Veloso Line = papers co-authored together A. Veloso links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method Microelectronic Engineering ·Paola Favia, T. Ichige, A. Veloso, Ankit Nalin Mehta, Gerardo Martínez, Olivier Richard, Andriy Hikavyy, Xibin Luo, F. C. Seidel, Geoffrey Pourtois, Kedar Bhatt, Акиншин Леонид	2025	0
2	Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K Solid-State Electronics ·Aaron Horvath, (unknown), A. Veloso, Jean-Paul Ledant	2025	1
3	Novel Y-function methodology parameter estimation from weak to strong inversion operation Solid-State Electronics ·Aaron Horvath, B. Cretu, A. Veloso, Jean-Paul Ledant	2025	0
4	High-density standard cell libraries with backside power options in A14 nanosheet node Halil Kükner, Gioele Mirabelli, Sheng Yang, Runjuan Wu, Alexander Makarov, Yang Xiang, Juergen Boemmels, A. Veloso, Odysseas Zografos, Pieter Weckx, Julien Ryckaert, Geert Hellings	2024	1
5	Impact of Sub-μm Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era IEEE Transactions on Electron Devices ·Rosanna Veggeberg, Shih‐Hung Chen, Geert Hellings, A. Veloso, Anne Jourdain, Jo De Boeck, G. Groeseneken	2024	1
6	Active area patterning for CFET: nanosheet etch Chantal Kleman‐Mariac, Cheng Wenjing, Maryam Hosseini, Dmitry Batuk, A. Veloso, G. Mannaert, Frédéric Lazzarino	2024	1
7	(Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures ECS Transactions ·B. Cretu, 雅則澤山, A. Veloso, Eddy Simoen	2023	1
8	Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided? Solid-State Electronics ·Aaron Horvath, B. Cretu, A. Veloso, Eddy Simoen	2023	0
9	Power, Performance, Area and Thermal Analysis of 2D and 3D ICs at A14 Node Designed with Back-side Power Delivery Network 2022 International Electron Devices Meeting (IEDM) ·Δημήτριος Ματραλής, Melina Lofrano, Gioele Mirabelli, J. Knap, Sheng Yang, Anne Jourdain, Filip Schleicher, A. Veloso, Odysseas Zografos, Pieter Weckx, Gaspard Hiblot, Geert Van der Plas, Geert Hellings, Julien Ryckaert, Eric Beyne	2022	18
10	Insights into Scaled Logic Devices Connected from Both Wafer Sides 2022 International Electron Devices Meeting (IEDM) ·A. Veloso, Geert Eneman, Prachand Man Pradhan, Bjorn Vermeersch, Anne Jourdain, 余明, Barry O’Sullivan, Δημήτριος Ματραλής, A. De Keersgieter, E. Simoen, D. Radisic, Yusuke Oniki, A Shukairi, S. Brus, Eric Beyne, E. Dentoni Litta, Naoto Horiguchi	2022	4
11	Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors IEEE Transactions on Electron Devices ·Geert Eneman, A. Veloso, Paola Favia, Andriy Hikavyy, Clément Porret, Hiroaki Arimura, A. De Keersgieter, Geoffrey Pourtois, Roger Loo, A. Spessot, Philippe Matagne, Julien Ryckaert, Naoto Horiguchi	2021	7
12	Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 °C Semiconductor Science and Technology ·Zaira Castañeda, João Antônio Martino, Eddy Simoen, A. Veloso, Paula Ghedini Der Agopian	2021	1
13	Simultaneous Dimensional and Analytical Characterization of Ordered Nanostructures Small ·Philipp Hönicke, Yves Kayser, Ludger S. M. Epping, Victor Soltwisch, Jeroen E. Scheerder, Claudia Fleischmann, Thomas Siefke, Hwa KUK, 李佳烜, Frank Siewert, Jeffrey M. Davis, Martin Huth, A. Veloso, Roger Loo, Dieter Skroblin, Michael Steinert, Andreas Undisz, Markus Rettenmayr, Burkhard Beckhoff	2021	16
14	Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures IEEE Transactions on Electron Devices ·贾金方, Zaira Castañeda, João Antônio Martino, Eddy Simoen, A. Veloso, Paula Ghedini Der Agopian	2021	23
15	(Invited) Stress Simulations of Fins, Wires, and Nanosheets ECS Meeting Abstracts ·Geert Eneman, A. Veloso, Paola Favia, Andriy Hikavyy, Clément Porret, Hiroaki Arimura, A. De Keersgieter, Geoffrey Pourtois, Roger Loo, A. Spessot, Philippe Matagne, Julien Ryckaert, Naoto Horiguchi	2020	1
16	(Invited) Stress Simulations of Fins, Wires, and Nanosheets ECS Transactions ·Geert Eneman, A. Veloso, Paola Favia, Andriy Hikavyy, Clément Porret, Hiroaki Arimura, A. De Keersgieter, Geoffrey Pourtois, Roger Loo, A. Spessot, Philippe Matagne, Julien Ryckaert, Naoto Horiguchi	2020	11
17	Size Independent pH Sensitivity for Ion Sensitive FinFETs Down to 10 nm Width IEEE Sensors Journal ·V. Vassiliou, Martina Zrno, A. Veloso, Zheng Tao, Mohammed Abdulaziz Al Sekait, Geert Hellings, Liesbet Lagae, W. Van Roy, Koen Martens	2019	9
18	1/f Noise in Fully Integrated Electrolytically Gated FinFETs with Fin Width Down to 20nm Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Koen Martens, Bert Du Bois, Yong Kong Siew, Anshul Gupta, A. Veloso, Emmanuel Dupuy, D. Radisic, Efrain Altamirano Sánchez, W. Van Roy, S. Severi, Eddy Simoen	2019	1
19	Patterning challenges in advanced device architectures: FinFETs to nanowires Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Naoto Horiguchi, Alexey Milenin, V.S. Krasjuk, Kiyama Ryoji, Efrain Altamirano Sánchez, A. Veloso, Liesbeth Witters, Niamh Waldron, H. Hougaard, Isabelle S. Robert, Y. Kikuchi, Hans Mertens, Preethi Raghavan, John M. Drake, Nadine Collaert, K. Barla	2016	4
20	ESD performance of high mobility SiGe quantum well bulk finFET diodes and PMOS devices Electrical Overstress/Electrostatic Discharge Symposium ·Dimitri Linten, Geert Hellings, Shih‐Hung Chen, Odysseas Zografos, Mirko Scholz, A. Veloso, G. Groeseneken	2013	4

About A. Veloso

A. Veloso is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics and Surfaces, Coatings and Films, having authored 219 papers that have together received 2.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (186 papers), Advancements in Semiconductor Devices and Circuit Design (173 papers), Integrated Circuits and Semiconductor Failure Analysis (67 papers), Ferroelectric and Negative Capacitance Devices (34 papers), Nanowire Synthesis and Applications (25 papers), Semiconductor materials and interfaces (23 papers), Silicon Carbide Semiconductor Technologies (18 papers) and Magnetic properties of thin films (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.0k citations), Atomic and Molecular Physics, and Optics (557 citations), Biomedical Engineering (501 citations), Condensed Matter Physics (109 citations) and Electronic, Optical and Magnetic Materials (165 citations). A. Veloso has collaborated with scholars based in Belgium, Brazil and France. Frequent co-authors include Eddy Simoen, Nadine Collaert, P. P. Freitas, Naoto Horiguchi, G. Groeseneken, M. Jurczak, S. Biesemans, Trong Huynh-Bao, Geert Eneman and Julien Ryckaert. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Electron Devices, Microelectronic Engineering, IEEE Electron Device Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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