L.-Å. Ragnarsson

993 total citations
41 papers, 642 citations indexed

About

L.-Å. Ragnarsson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L.-Å. Ragnarsson has authored 41 papers receiving a total of 642 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in L.-Å. Ragnarsson's work include Semiconductor materials and devices (37 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). L.-Å. Ragnarsson is often cited by papers focused on Semiconductor materials and devices (37 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). L.-Å. Ragnarsson collaborates with scholars based in Belgium, United States and Austria. L.-Å. Ragnarsson's co-authors include M. Garcia Bardon, G. Groeseneken, T. Chiarella, M. Togo, T. Schram, Julien Ryckaert, A. Spessot, Naoto Horiguchi, Doyoung Jang and Supratik Guha and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

L.-Å. Ragnarsson

40 papers receiving 614 citations

Peers

L.-Å. Ragnarsson

EEE

AMPO

EOMM

Jeff J. Peterson United States

Ching-Hsiang Tsai Taiwan

M. Togo Japan

Slimane Oussalah Algeria

J. Yugami Japan

Kaizad Mistry United States

Subhadeep Mukhopadhyay India

S. J. Whang Singapore

Fu-Kuo Hsueh Taiwan

C. Caillat Belgium

Jeff J. Peterson United States

L.-Å. Ragnarsson

629 ×1.0

EEE

145 ×1.3

42 ×0.8

AMPO

18 ×0.4

34 ×1.5

EOMM

Citations per year, relative to L.-Å. Ragnarsson L.-Å. Ragnarsson (= 1×) peers Jeff J. Peterson

Countries citing papers authored by L.-Å. Ragnarsson

Since Specialization

Citations

This map shows the geographic impact of L.-Å. Ragnarsson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.-Å. Ragnarsson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.-Å. Ragnarsson more than expected).

Fields of papers citing papers by L.-Å. Ragnarsson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.-Å. Ragnarsson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.-Å. Ragnarsson. The network helps show where L.-Å. Ragnarsson may publish in the future.

Co-authorship network of co-authors of L.-Å. Ragnarsson

This figure shows the co-authorship network connecting the top 25 collaborators of L.-Å. Ragnarsson. A scholar is included among the top collaborators of L.-Å. Ragnarsson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.-Å. Ragnarsson. L.-Å. Ragnarsson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Vais, Abhitosh, et al.. (2025). Comparative cradle-to-gate LCA of RF power amplifiers for user equipment. Nanotechnology. 36(47). 475203–475203. 1 indexed citations

Ragnarsson, L.-Å., M. Garcia Bardon, Pieter Wuytens, et al.. (2022). Environmental Impact of CMOS Logic Technologies. 82–84. 10 indexed citations

Xiang, Yang, M. Garcia Bardon, B. Kaczer, et al.. (2021). Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics. IEEE Transactions on Electron Devices. 68(4). 2107–2115. 23 indexed citations

Bardon, M. Garcia, Pieter Wuytens, L.-Å. Ragnarsson, et al.. (2020). DTCO including Sustainability: Power-Performance-Area-Cost-Environmental score (PPACE) Analysis for Logic Technologies. 41.4.1–41.4.4. 55 indexed citations

Arimura, Hiroaki, E. Capogreco, Kurt Wostyn, et al.. (2020). Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-Cap-Free Gate Stack and Optimizing the Channel Strain. 1–2. 5 indexed citations

Weckx, Pieter, Julien Ryckaert, V. Putcha, et al.. (2017). Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm. 20.5.1–20.5.4. 39 indexed citations

Chiarella, T., Stefan Kubicek, Erik Rosseel, et al.. (2016). Towards high performance sub-10nm finW bulk FinFET technology. 131–134. 15 indexed citations

O’Connor, Robert, et al.. (2013). Stress induced defect generation implications of doping HfO2 with Al. Microelectronic Engineering. 109. 54–56. 3 indexed citations

Franco, J., B. Kaczer, M. Toledano-Luque, et al.. (2012). Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs. 5A.4.1–5A.4.6. 75 indexed citations

10.

Franco, J., et al.. (2012). BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectronics Reliability. 52(9-10). 1932–1935. 5 indexed citations

11.

Pantisano, L., Geert Hellings, R. Ritzenthaler, et al.. (2012). On the rseries extraction techniques for sub-22nm CMOS finfet and SiGe technologies. 1–2. 1 indexed citations

12.

Ragnarsson, L.-Å., T. Chiarella, M. Togo, et al.. (2011). Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited). Microelectronic Engineering. 88(7). 1317–1322. 49 indexed citations

13.

Shi, Xiaodong, Hilde Tielens, Shinji Takeoka, et al.. (2010). Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O. Journal of The Electrochemical Society. 158(1). H69–H69. 12 indexed citations

14.

Ortolland, C., L.-Å. Ragnarsson, Paola Favia, et al.. (2006). Optimized ultra-low thermal budget process flow for advanced High-K / Metal gate first CMOS using laser-annealing technology. Symposium on VLSI Technology. 38–39. 1 indexed citations

15.

Severi, S., K. De Meyer, Ray Duffy, et al.. (2005). Integration of ultra shallow junctions in PVD TaN nMOS transistors with Flash Lamp Annealing. 2 indexed citations

16.

Kerber, A., L.-Å. Ragnarsson, M. Rosmeulen, et al.. (2004). Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics. 159–160. 24 indexed citations

17.

Tsai, Wei‐Bor, L.-Å. Ragnarsson, Bart Onsia, et al.. (2004). Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface. 9. 21–22. 5 indexed citations

18.

Ragnarsson, L.-Å., et al.. (2003). The impact of sub monolayers of HfO2 on the device performance of high-K based transistors. 87–90. 9 indexed citations

19.

Ragnarsson, L.-Å., Supratik Guha, N. A. Bojarczuk, et al.. (2001). Electrical characterization of Al₂O₃ n-channel MOSFETs with aluminum gates. IEEE Electron Device Letters. 22(10). 490–492. 19 indexed citations

20.

Landheer, D., et al.. (1997). Physical and electrical analysis of silicon dioxide thin films produced by electron-cyclotron resonance chemical-vapour deposition. Microelectronic Engineering. 36(1-4). 53–60. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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