A. Redolfi

2.1k total citations
89 papers, 1.6k citations indexed

About

A. Redolfi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, A. Redolfi has authored 89 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 7 papers in Polymers and Plastics. Recurrent topics in A. Redolfi's work include Semiconductor materials and devices (64 papers), Ferroelectric and Negative Capacitance Devices (50 papers) and Advanced Memory and Neural Computing (49 papers). A. Redolfi is often cited by papers focused on Semiconductor materials and devices (64 papers), Ferroelectric and Negative Capacitance Devices (50 papers) and Advanced Memory and Neural Computing (49 papers). A. Redolfi collaborates with scholars based in Belgium, United States and Italy. A. Redolfi's co-authors include M. Jurczak, Sergiu Clima, A. Fantini, L. Goux, R. Degraeve, Attilio Belmonte, G. Groeseneken, B. Govoreanu, Eric Beyne and Ludovic Goux and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

A. Redolfi

85 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Redolfi Belgium 25 1.6k 275 219 180 106 89 1.6k
Xiaohan Wu United States 16 1.3k 0.8× 747 2.7× 228 1.0× 212 1.2× 81 0.8× 38 1.5k
Guokun Ma China 18 893 0.6× 399 1.5× 115 0.5× 290 1.6× 91 0.9× 64 1.0k
Yangbin Zhu China 16 770 0.5× 550 2.0× 175 0.8× 144 0.8× 216 2.0× 34 1.0k
P. J. Tzeng Taiwan 12 1.2k 0.7× 340 1.2× 144 0.7× 180 1.0× 48 0.5× 30 1.2k
Itamar Balla United States 15 1.3k 0.8× 1.2k 4.4× 254 1.2× 186 1.0× 201 1.9× 19 1.9k
M. N. Kirikova Russia 11 543 0.3× 281 1.0× 138 0.6× 168 0.9× 225 2.1× 17 763
Chao Wen China 16 1.1k 0.7× 676 2.5× 239 1.1× 161 0.9× 163 1.5× 30 1.4k
Christina Schindler Germany 15 1.4k 0.9× 354 1.3× 454 2.1× 407 2.3× 95 0.9× 32 1.4k
Meehyun Lim South Korea 15 681 0.4× 124 0.5× 236 1.1× 197 1.1× 345 3.3× 23 920
Woojin Park South Korea 16 554 0.3× 270 1.0× 83 0.4× 93 0.5× 143 1.3× 49 722

Countries citing papers authored by A. Redolfi

Since Specialization
Citations

This map shows the geographic impact of A. Redolfi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Redolfi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Redolfi more than expected).

Fields of papers citing papers by A. Redolfi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Redolfi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Redolfi. The network helps show where A. Redolfi may publish in the future.

Co-authorship network of co-authors of A. Redolfi

This figure shows the co-authorship network connecting the top 25 collaborators of A. Redolfi. A scholar is included among the top collaborators of A. Redolfi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Redolfi. A. Redolfi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Belmonte, Attilio, Umberto Celano, Zhe Chen, et al.. (2018). Voltage-controlled reverse filament growth boosts resistive switching memory. Nano Research. 11(8). 4017–4025. 21 indexed citations
2.
Goux, L., et al.. (2016). Doped Gd-O Based RRAM for Embedded Application. 1–4. 9 indexed citations
3.
Belmonte, Attilio, A. Fantini, A. Redolfi, et al.. (2015). Excellent Roff/Ron ratio and short programming time in Cu/Al2O3‐based conductive‐bridging RAM under low‐current (10 μA) operation. physica status solidi (a). 213(2). 302–305. 12 indexed citations
4.
5.
Goux, L., et al.. (2015). H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. Journal of Applied Physics. 117(12). 22 indexed citations
6.
7.
Popovici, M., A. Redolfi, B. Kaczer, et al.. (2014). Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory. Applied Physics Letters. 104(8). 32 indexed citations
8.
9.
Fantini, A., Sergiu Clima, R. Degraeve, et al.. (2014). Engineering of Hf<inf>1&#x2212;x</inf>Al<inf>x</inf>O<inf>y</inf> amorphous dielectrics for high-performance RRAM applications. 1–4. 18 indexed citations
10.
Goux, L., et al.. (2014). Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells. ECS Solid State Letters. 3(11). Q79–Q81. 24 indexed citations
11.
Civale, Yann, Stefaan Van Huylenbroeck, A. Redolfi, et al.. (2013). Via-middle through-silicon via with integrated airgap to zero TSV-induced stress impact on device performance. 1420–1424. 10 indexed citations
12.
13.
Velenis, Dimitrios, T. Kauerauf, Michele Stucchi, et al.. (2012). Electrical characterization method to study barrier integrity in 3D through-silicon vias. 304–308. 24 indexed citations
14.
Civale, Yann, Silvia Armini, Harold Philipsen, et al.. (2012). Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-silicon via interconnects. 822–826. 28 indexed citations
15.
Jourdain, Anne, Alain Phommahaxay, A. Redolfi, et al.. (2011). Integration of TSVs, wafer thinning and backside passivation on full 300mm CMOS wafers for 3D applications. 1122–1125. 52 indexed citations
16.
Ong, Patrick, K. Devriendt, A. Redolfi, Y. Okuno, & José Luis Hernández. (2011). Influence of STI Trench Fill and Dummy Design on CMP Behavior. 1–6.
17.
Chiarella, T., Liesbeth Witters, A. Mercha, et al.. (2010). Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession. Solid-State Electronics. 54(9). 855–860. 99 indexed citations
18.
Chiarella, T., Liesbeth Witters, A. Mercha, et al.. (2009). Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk?. VUBIR (Vrije Universiteit Brussel). 85–88. 11 indexed citations
19.
Chiarella, T., Liesbeth Witters, A. Mercha, et al.. (2009). Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?. VUBIR (Vrije Universiteit Brussel). 84–87. 20 indexed citations
20.
Shamiryan, Denis, A. Redolfi, & Werner Boullart. (2008). Dry etching process for bulk finFET manufacturing. Microelectronic Engineering. 86(1). 96–98. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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