A. Redolfi

2.1k citations

89 papers · 1.6k indexed · h-index 25

Impact in

Electrical and Electronic Engineering top 2%
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Advancements in Semiconductor Devices and Circuit Design
Polymers and Plastics top 10%
- Transition Metal Oxide Nanomaterials

Papers in ⓘ

Electrical and Electronic Engineering 88
- Semiconductor materials and devices 64
- Ferroelectric and Negative Capacitance Devices 50
- Advanced Memory and Neural Computing 49
- 3D IC and TSV technologies 18
- Advancements in Semiconductor Devices and Circuit Design 15
- Integrated Circuits and Semiconductor Failure Analysis 10
- Electronic Packaging and Soldering Technologies 9
Polymers and Plastics 7
- Transition Metal Oxide Nanomaterials 7

Co-authors: M. Jurczak (49 shared papers)Sergiu Clima (26 shared papers)A. Fantini (28 shared papers)L. Goux (25 shared papers)R. Degraeve (19 shared papers)Attilio Belmonte (26 shared papers)G. Groeseneken (16 shared papers)B. Govoreanu (12 shared papers)
Journals: IEEE Electron Device Letters (9 papers)Microelectronic Engineering (5 papers)Solid-State Electronics (5 papers)physica status solidi (a) (2 papers)Applied Physics Letters (2 papers)
Partner nations: Belgium United States Italy

In The Last Decade

A. Redolfi

85 papers receiving 1.6k citations

Peers

Countries citing papers authored by A. Redolfi

Since Specialization

Citations

This map shows the geographic impact of A. Redolfi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Redolfi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Redolfi more than expected).

Fields of papers citing papers by A. Redolfi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Redolfi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Redolfi. The network helps show where A. Redolfi may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Redolfi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Redolfi Line = papers co-authored together A. Redolfi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 89 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Cu pumping in TSVs: Effect of pre-CMP thermal budget Microelectronics Reliability ·Ingrid De Wolf, Kristof Croes, Olalla Varela Pedreira, Riet Labie, A. Redolfi, Myriam Van De Peer, Kris Vanstreels, Chukwudi Okoro, Bart Vandevelde, Eric Beyne	2011	116
2	Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Solid-State Electronics ·T. Chiarella, Liesbeth Witters, A. Mercha, C. Kerner, Michał Rakowski, C. Ortolland, (unknown), Bertrand Parvais, A. De Keersgieter, Stefan Kubicek, A. Redolfi, C. Vrancken, S. Brus, A. Lauwers, P. Absil, S. Biesemans, Thomas Hoffmann	2010	99
3	Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	85
4	Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B. Govoreanu, A. Redolfi, L. Zhang, Christoph Adelmann, M. Popovici, Sergiu Clima, Hubert Hody, Vasile Paraschiv, Iuliana Radu, Alexis Franquet, J.-C. Liu, Johan Swerts, Olivier Richard, H. Bender, L. Altimime, M. Jurczak	2013	60
5	Intrinsic program instability in HfO2 RRAM and consequences on program algorithms A. Fantini, Georgi Gorine, R. Degraeve, L. Goux, C. Y. Chen, A. Redolfi, Sergiu Clima, A. Cabrini, G. Torelli, M. Jurczak	2015	58
6	Thermally stable integrated Se-based OTS selectors with >20 MA/cm² current drive, >3.10³ half-bias nonlinearity, tunable threshold voltage and excellent endurance B. Govoreanu, Gabriele Luca Donadio, Karl Opsomer, Wouter Devulder, V. V. Afanas’ev, T. Witters, Sergiu Clima, Naga Sruti Avasarala, A. Redolfi, Shreya Kundu, Olivier Richard, D. Tsvetanova, Geoffrey Pourtois, C. Detavemier, L. Goux, Gouri Sankar Kar	2017	57
7	Integration of TSVs, wafer thinning and backside passivation on full 300mm CMOS wafers for 3D applications Anne Jourdain, Thibault Buisson, Alain Phommahaxay, A. Redolfi, Sarasvathi Thangaraju, Youssef Travaly, Eric Beyne, Bart Swinnen	2011	52
8	Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	48
9	Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers A. Redolfi, Dimitrios Velenis, Sarasvathi Thangaraju, P. Nolmans, Patrick Jaenen, Maarten Kostermans, Ulrich Baier, Els Van Besien, Harold Dekkers, T. Witters, N. Jourdan, A. Van Ammel, K. Vandersmissen, Simon Rodet, Harold Philipsen, Aleksandar Radisic, N. Heylen, Youssef Travaly, Bart Swinnen, Eric Beyne	2011	43
10	High-Performance Metal-Insulator-Metal Tunnel Diode Selectors IEEE Electron Device Letters ·B. Govoreanu, Christoph Adelmann, A. Redolfi, Leqi Zhang, Sergiu Clima, M. Jurczak	2014	42
11	Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells Applied Physics Letters ·C. Y. Chen, L. Goux, A. Fantini, Sergiu Clima, R. Degraeve, A. Redolfi, Y. Y. Chen, G. Groeseneken, M. Jurczak	2015	38
12	Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications IEEE Electron Device Letters ·Leqi Zhang, A. Redolfi, Christoph Adelmann, Sergiu Clima, Iuliana Radu, Yangyin Chen, Dirk J. Wouters, G. Groeseneken, M. Jurczak, B. Govoreanu	2014	36
13	Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory Applied Physics Letters ·M. Popovici, J. Swerts, A. Redolfi, B. Kaczer, M. Aoulaiche, Iuliana Radu, Sergiu Clima, J.-L. Everaert, Sven Van Elshocht, M. Jurczak	2014	32
14	Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta<inf>2</inf>O<inf>5</inf>\Ta RRAM device L. Goux, A. Fantini, A. Redolfi, C.Y. Chen, Fazhan Shi, R. Degraeve, Y.Y. Chen, T. Witters, G. Groeseneken, M. Jurczak	2014	31
15	Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology Wei Guo, Victor Moroz, Geert Van der Plas, Minkeun Choi, A. Redolfi, Lee Smith, Geert Eneman, Stefaan Van Huylenbroeck, Pin Su, Alojz Ivankoviç, B. De Wachter, I. Debusschere, Kristof Croes, Ingrid De Wolf, A. Mercha, Gerald Beyer, Bart Swinnen, Eric Beyne	2013	31
16	Impact of through silicon via induced mechanical stress on fully depleted Bulk FinFET technology Wei Guo, Geert Van der Plas, Alojz Ivankoviç, Vladimir Cherman, Geert Eneman, B. De Wachter, M. Togo, A. Redolfi, S. Kubicek, Yann Civale, T. Chiarella, Bart Vandevelde, Kristof Croes, Ingrid De Wolf, I. Debusschere, A. Mercha, Aaron Thean, Gerald Beyer, Bart Swinnen, Eric Beyne	2012	30
17	Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopants Y. Y. Chen, R. Roelofs, A. Redolfi, R. Degraeve, D. Crotti, A. Fantini, Sergiu Clima, B. Govoreanu, Masanori Komura, L. Goux, L. Zhang, Attilio Belmonte, Qiyuan Xie, Jan Willem Maes, Geoffrey Pourtois, M. Jurczak	2014	29
18	Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta<inf>2</inf>O<inf>5</inf> RRAM cells C.Y. Chen, L. Goux, A. Fantini, A. Redolfi, Sergiu Clima, R. Degraeve, Y.Y. Chen, G. Groeseneken, M. Jurczak	2014	29
19	Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-silicon via interconnects Yann Civale, Silvia Armini, Harold Philipsen, A. Redolfi, Dimitrios Velenis, Kristof Croes, N. Heylen, Zaid El-Mekki, K. Vandersmissen, Gerald Beyer, Bart Swinnen, Eric Beyne	2012	28
20	Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM IEEE Electron Device Letters ·Attilio Belmonte, Umberto Celano, R. Degraeve, A. Fantini, A. Redolfi, Wilfried Vandervorst, Michel Houssa, M. Jurczak, L. Goux	2015	28

About A. Redolfi

A. Redolfi is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics, Cellular and Molecular Neuroscience, Materials Chemistry and Automotive Engineering, having authored 89 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (64 papers), Ferroelectric and Negative Capacitance Devices (50 papers), Advanced Memory and Neural Computing (49 papers), 3D IC and TSV technologies (18 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Electronic Packaging and Soldering Technologies (9 papers) and Transition Metal Oxide Nanomaterials (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Polymers and Plastics (180 citations), Cellular and Molecular Neuroscience (219 citations), Materials Chemistry (275 citations) and Electronic, Optical and Magnetic Materials (86 citations). A. Redolfi has collaborated with scholars based in Belgium, United States and Italy. Frequent co-authors include M. Jurczak, Sergiu Clima, A. Fantini, L. Goux, R. Degraeve, Attilio Belmonte, G. Groeseneken, B. Govoreanu, Eric Beyne and Ludovic Goux. Their work appears in journals such as IEEE Electron Device Letters, Microelectronic Engineering, Solid-State Electronics, physica status solidi (a) and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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