G. Pourtois

1.2k total citations
20 papers, 987 citations indexed

About

G. Pourtois is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Pourtois has authored 20 papers receiving a total of 987 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Pourtois's work include Semiconductor materials and devices (12 papers), Graphene research and applications (7 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). G. Pourtois is often cited by papers focused on Semiconductor materials and devices (12 papers), Graphene research and applications (7 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). G. Pourtois collaborates with scholars based in Belgium, Italy and France. G. Pourtois's co-authors include Michel Houssa, V. V. Afanas’ev, A. Stesmans, A. Stesmans, Marc Heyns, Emilio Scalise, V. V. Afanas’ev, R. Degraeve, T. Schram and Stefan De Gendt and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

G. Pourtois

20 papers receiving 956 citations

Peers

Countries citing papers authored by G. Pourtois

Since Specialization

Citations

This map shows the geographic impact of G. Pourtois's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Pourtois with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Pourtois more than expected).

Fields of papers citing papers by G. Pourtois

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Pourtois. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Pourtois. The network helps show where G. Pourtois may publish in the future.

Co-authorship network of co-authors of G. Pourtois

This figure shows the co-authorship network connecting the top 25 collaborators of G. Pourtois. A scholar is included among the top collaborators of G. Pourtois based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Pourtois. G. Pourtois is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Si-passivated Ge nFET towards a reliable Ge CMOS 2016 ·Hiroaki Arimura, Sonja Sioncke, Daire Cott, Jérôme Mitard, Wendy Vanherle, Roger Loo, J. Franco, Thierry Conard, Paola Favia, H. Bender, Liesbeth Witters, Hans Mertens, L.-Å. Ragnarsson, G. Pourtois, Marc Heyns, A. Mocuta, Aaron Thean, D. Mocuta, Nadine Collaert	1
2	Interaction of silicene and germanene with non-metallic substrates 2015 ·Journal of Physics Conference Series ·Michel Houssa, Emilio Scalise, Bas van den Broek, Anh Khoa Augustin Lu, G. Pourtois, V. V. Afanas’ev, A. Stesmans	5
3	Engineering the electronic properties of silicene by tuning the composition of MoX ₂ and GaX (X = S,Se,Te) chalchogenide templates 2014 ·2D Materials ·Emilio Scalise, Michel Houssa, Eugenio Cinquanta, Carlo Grazianetti, Bas van den Broek, G. Pourtois, A. Stesmans, M. Fanciulli, Alessandro Molle	44
4	Vibrational properties of epitaxial silicene layers on (111) Ag 2013 ·Applied Surface Science ·Emilio Scalise, Eugenio Cinquanta, Michel Houssa, Bas van den Broek, Daniele Chiappe, Carlo Grazianetti, G. Pourtois, B. Ealet, Alessandro Molle, M. Fanciulli, V. V. Afanas’ev, A. Stesmans	43
5	Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen Monolayer on Si(100) Substrates 2013 ·ECS Solid State Letters ·(unknown), (unknown), (unknown), Roger Loo, (unknown), G. Pourtois, Bastien Douhard, Thierry Conard, Johan Meersschaut, (unknown), (unknown), Marc Heyns	8
6	Theoretical aspects of graphene-like group IV semiconductors 2013 ·Applied Surface Science ·Michel Houssa, Bas van den Broek, Emilio Scalise, B. Ealet, G. Pourtois, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, M. Fanciulli, Alessandro Molle, V. V. Afanas’ev, A. Stesmans	18
7	First-principles study of strained 2D MoS2 2012 ·Physica E Low-dimensional Systems and Nanostructures ·Emilio Scalise, Michel Houssa, G. Pourtois, V. V. Afanas’ev, A. Stesmans	119
8	Asymmetry and Switching Phenomenology in TiN\(Al2O3)\HfO2\Hf Systems 2012 ·ECS Solid State Letters ·L. Goux, A. Fantini, B. Govoreanu, Gouri Sankar Kar, Sergiu Clima, (unknown), R. Degraeve, Dirk J. Wouters, G. Pourtois, M. Jurczak	15
9	Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects 2011 ·Journal of The Electrochemical Society ·Christoph Adelmann, Johan Swerts, Olivier Richard, Thierry Conard, M. Popovici, Johan Meersschaut, V. V. Afanas’ev, L. Breuil, A. Cacciato, Karl Opsomer, Bert Brijs, Hilde Tielens, G. Pourtois, H. Bender, M. Jurczak, Jan Van Houdt, Sven Van Elshocht, J. A. Kittl	7
10	Universal stress-defect correlation at (100)semiconductor/oxide interfaces 2011 ·Applied Physics Letters ·Michel Houssa, (unknown), G. Pourtois, V. V. Afanas’ev, A. Stesmans	7
11	Electronic properties of two-dimensional hexagonal germanium 2010 ·Applied Physics Letters ·Michel Houssa, G. Pourtois, V. V. Afanas’ev, A. Stesmans	109
12	First-principles modeling of intrinsic and extrinsic defects in γ-Al2O3 2010 ·Applied Physics Letters ·Kiroubanand Sankaran, G. Pourtois, R. Degraeve, M. B. Zahid, Gian‐Marco Rignanese, Jan Van Houdt	15
13	Can silicon behave like graphene? A first-principles study 2010 ·Applied Physics Letters ·Michel Houssa, G. Pourtois, V. V. Afanas’ev, A. Stesmans	191
14	Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles study 2008 ·Surface Science ·Michel Houssa, G. Pourtois, Matty Caymax, Marc Meuris, M. M. Heyns	33
15	First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf) 2008 ·Applied Physics Letters ·Michel Houssa, G. Pourtois, Matty Caymax, M. Meuris, Marc Heyns	67
16	H 2 S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface 2007 ·Applied Physics Letters ·Michel Houssa, Daniël Nelis, David Hellin, G. Pourtois, Thierry Conard, Kristof Paredis, (unknown), A. Vantomme, Marlies K. Van Bael, J.A. Mullens, Matty Caymax, Marc Meuris, M. M. Heyns	29
17	Experimental and theoretical study of Ge surface passivation 2007 ·Microelectronic Engineering ·Michel Houssa, G. Pourtois, B. Kaczer, Brice De Jaeger, Frederik Leys, Daniël Nelis, Kristof Paredis, A. Vantomme, Matty Caymax, Marc Meuris, Marc Heyns	16
18	Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions 2006 ·Materials Science and Engineering R Reports ·Michel Houssa, L. Pantisano, L.-Å. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, Stefan De Gendt, G. Groeseneken, Marc Heyns	227
19	Defect generation in high κ gate dielectric stacks under electrical stress: the impact of hydrogen 2005 ·Journal of Physics Condensed Matter ·Michel Houssa, G. Pourtois, M. M. Heyns, A. Stesmans	32
20	Reliability Issues in High-k Stacks 2004 ·R. Degraeve, Felice Crupi, Michel Houssa, (unknown), A. Kerber, E. Cartier, (unknown), Ph. Roussel, J.L. Autran, G. Pourtois, L. Pantisano, Stefan De Gendt, Marc Heyns, G. Groeseneken	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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