Geert Eneman

5.4k total citations
225 papers, 3.2k citations indexed

About

Geert Eneman is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Geert Eneman has authored 225 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 218 papers in Electrical and Electronic Engineering, 57 papers in Biomedical Engineering and 43 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Geert Eneman's work include Semiconductor materials and devices (184 papers), Advancements in Semiconductor Devices and Circuit Design (179 papers) and Integrated Circuits and Semiconductor Failure Analysis (64 papers). Geert Eneman is often cited by papers focused on Semiconductor materials and devices (184 papers), Advancements in Semiconductor Devices and Circuit Design (179 papers) and Integrated Circuits and Semiconductor Failure Analysis (64 papers). Geert Eneman collaborates with scholars based in Belgium, United States and United Kingdom. Geert Eneman's co-authors include K. De Meyer, Eddy Simoen, Roger Loo, Brice De Jaeger, Jérôme Mitard, Marc Meuris, Geert Hellings, Peter Verheyen, Dmitry Yakimets and M. Garcia Bardon and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Geert Eneman

219 papers receiving 3.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Geert Eneman Belgium 31 3.1k 810 509 283 44 225 3.2k
S. Deleonibus France 28 2.8k 0.9× 547 0.7× 430 0.8× 384 1.4× 33 0.8× 217 2.9k
S. Biesemans Belgium 28 2.4k 0.8× 326 0.4× 736 1.4× 278 1.0× 69 1.6× 171 2.5k
Digh Hisamoto Japan 20 3.0k 1.0× 575 0.7× 297 0.6× 366 1.3× 59 1.3× 85 3.1k
L. Clavelier France 23 1.5k 0.5× 432 0.5× 348 0.7× 291 1.0× 102 2.3× 104 1.6k
Geert Hellings Belgium 22 1.8k 0.6× 394 0.5× 272 0.5× 242 0.9× 60 1.4× 204 2.0k
G. M. Cohen United States 17 1.1k 0.3× 446 0.6× 191 0.4× 198 0.7× 29 0.7× 61 1.2k
Benjamin Vincent Belgium 20 1.4k 0.5× 436 0.5× 473 0.9× 212 0.7× 16 0.4× 87 1.5k
Jérôme Mitard Belgium 28 3.1k 1.0× 461 0.6× 370 0.7× 350 1.2× 57 1.3× 234 3.1k
Liesbeth Witters Belgium 22 1.7k 0.5× 326 0.4× 226 0.4× 156 0.6× 15 0.3× 148 1.7k
A. Veloso Belgium 23 2.0k 0.7× 501 0.6× 557 1.1× 287 1.0× 165 3.8× 219 2.3k

Countries citing papers authored by Geert Eneman

Since Specialization
Citations

This map shows the geographic impact of Geert Eneman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Geert Eneman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Geert Eneman more than expected).

Fields of papers citing papers by Geert Eneman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Geert Eneman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Geert Eneman. The network helps show where Geert Eneman may publish in the future.

Co-authorship network of co-authors of Geert Eneman

This figure shows the co-authorship network connecting the top 25 collaborators of Geert Eneman. A scholar is included among the top collaborators of Geert Eneman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Geert Eneman. Geert Eneman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Veloso, A., Geert Eneman, Bjorn Vermeersch, et al.. (2022). Insights into Scaled Logic Devices Connected from Both Wafer Sides. 2022 International Electron Devices Meeting (IEDM). 23.3.1–23.3.4. 4 indexed citations
2.
Bufler, F. M., Paola Favia, Geert Eneman, et al.. (2022). Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Performance . IEEE Transactions on Electron Devices. 69(11). 6384–6387. 1 indexed citations
3.
Eneman, Geert, A. Veloso, Paola Favia, et al.. (2021). Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors. IEEE Transactions on Electron Devices. 68(11). 5380–5385. 7 indexed citations
4.
Eneman, Geert, A. Veloso, Paola Favia, et al.. (2020). (Invited) Stress Simulations of Fins, Wires, and Nanosheets. ECS Meeting Abstracts. MA2020-02(24). 1737–1737. 1 indexed citations
5.
Eneman, Geert, A. Veloso, Paola Favia, et al.. (2020). (Invited) Stress Simulations of Fins, Wires, and Nanosheets. ECS Transactions. 98(5). 253–265. 11 indexed citations
6.
Claeys, Cor, Po-Chun Hsu, Y. Mols, et al.. (2020). Electrical Activity of Extended Defects in Relaxed In x Ga 1−x As Hetero-Epitaxial Layers. ECS Journal of Solid State Science and Technology. 9(3). 33001–33001. 3 indexed citations
7.
Hsu, Po-Chun, Eddy Simoen, Clément Merckling, et al.. (2019). The impact of extended defects on the generation and recombination lifetime in n type In .53 Ga .47 As. Journal of Physics D Applied Physics. 52(48). 485102–485102. 2 indexed citations
8.
Favia, Paola, Olivier Richard, Geert Eneman, et al.. (2019). TEM investigations of gate-all-around nanowire devices. Semiconductor Science and Technology. 34(12). 124003–124003. 8 indexed citations
9.
Mohiyaddin, Fahd A., A. Spessot, B. Govoreanu, et al.. (2019). Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices. IEEE Conference Proceedings. 2019. 1–39. 3 indexed citations
10.
Claeys, Cor, Po-Chun Hsu, Y. Mols, et al.. (2019). Are Extended Defects a Show Stopper for Future III-V CMOS Technologies. Journal of Physics Conference Series. 1190(1). 12001–12001. 1 indexed citations
11.
Veloso, A., Philippe Matagne, Eddy Simoen, et al.. (2018). Junctionless versus inversion-mode lateral semiconductor nanowire transistors. Journal of Physics Condensed Matter. 30(38). 384002–384002. 27 indexed citations
12.
Badaroglu, Mustafa, R. Ritzenthaler, Hans Mertens, et al.. (2017). PPAC scaling enablement for 5nm mobile SoC technology. 240–243. 8 indexed citations
13.
Eneman, Geert, A. De Keersgieter, Liesbeth Witters, et al.. (2012). Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel PFETS: A TCAD Study. 1 indexed citations
14.
Simoen, Eddy, Jérôme Mitard, Brice De Jaeger, et al.. (2010). Low-frequency noise in strained and relaxed Ge pMOSFETs. 518. 891–893. 1 indexed citations
15.
Claeys, Cor, Geert Eneman, Gang Wang, et al.. (2009). Defect Aspects of Ge-on-Si Materials and Devices. ECS Transactions. 22(1). 99–109. 3 indexed citations
16.
Hellings, Geert, Geert Eneman, Brice De Jaeger, et al.. (2009). Scalability of quantum well devices for digital logic applications. 33–34. 2 indexed citations
17.
Verheyen, Peter, et al.. (2006). Determining the limits of strain techniques in scaled CMOS devices. International Symposium on Microarchitecture. 24(6). 37–42. 1 indexed citations
18.
Mitard, Jérôme, Michel Houssa, Geert Eneman, et al.. (2006). Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. Symposium on VLSI Technology. 82–83. 35 indexed citations
19.
O’Neill, A.G., et al.. (2006). Quantifying Self-Heating Effects in Strained Si MOSFETs with Scaling. 97–100. 8 indexed citations
20.
Simoen, Eddy, Geert Eneman, Romain Delhougne, et al.. (2005). On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors. Applied Physics Letters. 86(22). 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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