Aaron Thean

1.1k total citations
56 papers, 703 citations indexed

About

Aaron Thean is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Aaron Thean has authored 56 papers receiving a total of 703 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in Aaron Thean's work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). Aaron Thean is often cited by papers focused on Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). Aaron Thean collaborates with scholars based in Belgium, United States and Italy. Aaron Thean's co-authors include Jean‐Pierre Leburton, Nadine Collaert, V. N. Freire, J. S. de Sousa, Wilfried Vandervorst, Naoto Horiguchi, Clément Merckling, Niamh Waldron, Dennis Lin and E. Vancoille and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Aaron Thean

54 papers receiving 678 citations

Peers

Aaron Thean

EEE

AMPO

Alexander Olbrich Germany

Veeresh Deshpande Switzerland

Siyuranga O. Koswatta United States

Han Zhao United States

Mehdi Saremi United States

Jae Sub Oh South Korea

Huiming Bu United States

Y. Yue United States

Alexander Grill Belgium

Masiar Sistani Austria

Alexander Olbrich Germany

Aaron Thean

496 ×0.8

EEE

134 ×0.6

333 ×1.7

AMPO

125 ×0.7

22 ×1.2

Citations per year, relative to Aaron Thean Aaron Thean (= 1×) peers Alexander Olbrich

Countries citing papers authored by Aaron Thean

Since Specialization

Citations

This map shows the geographic impact of Aaron Thean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Aaron Thean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Aaron Thean more than expected).

Fields of papers citing papers by Aaron Thean

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Aaron Thean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Aaron Thean. The network helps show where Aaron Thean may publish in the future.

Co-authorship network of co-authors of Aaron Thean

This figure shows the co-authorship network connecting the top 25 collaborators of Aaron Thean. A scholar is included among the top collaborators of Aaron Thean based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Aaron Thean. Aaron Thean is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2016). Si-passivated Ge nFET towards a reliable Ge CMOS. 1 indexed citations

Simoen, Eddy, Paula Ghedini Der Agopian, João Antônio Martino, et al.. (2016). Low Temperature Effect on Strained and Relaxed Ge pFinFETs STI Last Processes. ECS Transactions. 75(4). 213–218. 3 indexed citations

Resta, Giovanni V., Surajit Sutar, Yashwanth Balaji, et al.. (2016). Polarity control in WSe2 double-gate transistors. Scientific Reports. 6(1). 29448–29448. 71 indexed citations

Veloso, A., Eddy Simoen, Geert Hellings, et al.. (2016). (Invited) Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics. ECS Transactions. 72(2). 85–95. 22 indexed citations

Wostyn, Kurt, Farid Sebaai, Jens Rip, et al.. (2015). (Invited) Selective Etch of Si and SiGe for Gate All-Around Device Architecture. ECS Transactions. 69(8). 147–152. 19 indexed citations

Verhulst, Anne S., Devin Verreck, Maarten L. Van de Put, et al.. (2014). Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?. Applied Physics Letters. 105(4). 43103.

Nourbakhsh, Amirhasan, Tarun Agarwal, Alexander Klekachev, et al.. (2014). Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications. Nanotechnology. 25(34). 345203–345203. 6 indexed citations

Merckling, Clément, Niamh Waldron, Shidong Jiang, et al.. (2014). Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering. Journal of Applied Physics. 115(2). 66 indexed citations

Lee, Jae Wook, Eddy Simoen, A. Veloso, et al.. (2013). Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor. ACS Applied Materials & Interfaces. 5(18). 8865–8868. 15 indexed citations

10.

Lee, Jae Wook, Eddy Simoen, R. Ritzenthaler, et al.. (2013). 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor. Applied Physics Letters. 102(7). 10 indexed citations

11.

Lee, Jae Wook, M. Togo, G. Boccardi, et al.. (2013). Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors. Applied Physics Letters. 102(22). 28 indexed citations

12.

Ritzenthaler, R., T. Schram, E. Bury, et al.. (2013). Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks. Solid-State Electronics. 84. 22–27. 9 indexed citations

13.

Lin, Dennis, A. Alian, Shubhanshu Gupta, et al.. (2012). Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs. 28.3.1–28.3.4. 33 indexed citations

14.

Sioncke, Sonja, Dennis Lin, Laura Nyns, et al.. (2012). Passivation Challenges with Ge and III/V Devices. ECS Transactions. 45(4). 97–110. 4 indexed citations

15.

Thean, Aaron. (2007). Strained Silicon Directly on Insulator (SSOI): Biaxial, Uniaxial, or Hybrid Strain?. ECS Transactions. 6(4). 287–293. 2 indexed citations

16.

Grudowski, Piotr, V. Dhandapani, Stefan Zollner, et al.. (2007). An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing. 17–18. 4 indexed citations

17.

Mathew, L., Yang Du, Aaron Thean, et al.. (2004). Multi gated device architectures advances, advantages and challenges. 97–98.

18.

Sousa, J. S. de, et al.. (2003). Effects of crystallographic orientations on the charging time in silicon nanocrystal flash memories. Applied Physics Letters. 82(16). 2685–2687. 16 indexed citations

19.

Sousa, J. S. de, Aaron Thean, Jean‐Pierre Leburton, & V. N. Freire. (2002). Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories. Journal of Applied Physics. 92(10). 6182–6187. 38 indexed citations

20.

Thean, Aaron & Jean‐Pierre Leburton. (1999). Three-dimensional self-consistent simulation of silicon quantum-dot floating-gate flash memory device. IEEE Electron Device Letters. 20(6). 286–288. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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