A. Alian

1.3k total citations
86 papers, 946 citations indexed

About

A. Alian is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Alian has authored 86 papers receiving a total of 946 indexed citations (citations by other indexed papers that have themselves been cited), including 77 papers in Electrical and Electronic Engineering, 37 papers in Condensed Matter Physics and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Alian's work include Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and GaN-based semiconductor devices and materials (37 papers). A. Alian is often cited by papers focused on Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and GaN-based semiconductor devices and materials (37 papers). A. Alian collaborates with scholars based in Belgium, United States and Taiwan. A. Alian's co-authors include Nadine Collaert, Dennis Lin, Guy Brammertz, Matty Caymax, Clément Merckling, Aaron Thean, Bertrand Parvais, Eddy Simoen, Uthayasankaran Peralagu and Marc Meuris and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

A. Alian

79 papers receiving 921 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Alian Belgium 18 886 263 202 127 116 86 946
P. Prajoon India 14 483 0.5× 297 1.1× 150 0.7× 106 0.8× 92 0.8× 39 606
G. Mannaert Belgium 12 581 0.7× 245 0.9× 125 0.6× 98 0.8× 75 0.6× 51 662
Andrew Gerger United States 14 454 0.5× 115 0.4× 182 0.9× 139 1.1× 165 1.4× 58 531
Tomislav Suligoj Croatia 15 651 0.7× 111 0.4× 161 0.8× 252 2.0× 94 0.8× 126 839
Keiji Ikeda Japan 17 1.0k 1.1× 116 0.4× 283 1.4× 266 2.1× 243 2.1× 79 1.1k
Felix Kaess United States 15 354 0.4× 386 1.5× 89 0.4× 174 1.4× 168 1.4× 28 581
Guangrui Xia Canada 15 666 0.8× 84 0.3× 192 1.0× 208 1.6× 131 1.1× 76 763
S. Rennesson France 11 270 0.3× 302 1.1× 146 0.7× 161 1.3× 75 0.6× 28 457
Rinus T. P. Lee Singapore 12 414 0.5× 62 0.2× 173 0.9× 102 0.8× 76 0.7× 33 469

Countries citing papers authored by A. Alian

Since Specialization
Citations

This map shows the geographic impact of A. Alian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Alian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Alian more than expected).

Fields of papers citing papers by A. Alian

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Alian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Alian. The network helps show where A. Alian may publish in the future.

Co-authorship network of co-authors of A. Alian

This figure shows the co-authorship network connecting the top 25 collaborators of A. Alian. A scholar is included among the top collaborators of A. Alian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Alian. A. Alian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsai, Meng‐Che, Hao Yu, Yi Yang, et al.. (2025). Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress. IEEE Transactions on Electron Devices. 72(10). 5359–5365.
2.
Vais, Abhitosh, et al.. (2025). Comparative cradle-to-gate LCA of RF power amplifiers for user equipment. Nanotechnology. 36(47). 475203–475203. 1 indexed citations
3.
Alian, A., A. Sibaja-Hernandez, Hao Yu, et al.. (2025). High Power/PAE (27.8dBm/66%) Emode GaN-on-Si MOSHEMTs for 5V FR3 UE Annlications. 1–3.
4.
Xiao, Dongping, Dominique Schreurs, A. Alian, et al.. (2024). Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques. 73(2). 779–788. 3 indexed citations
5.
O’Sullivan, Barry, A. Alian, A. Sibaja-Hernandez, et al.. (2024). DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. 1–9. 1 indexed citations
6.
Banerjee, Sourish, Uthayasankaran Peralagu, A. Alian, et al.. (2024). Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors. physica status solidi (a). 221(21). 1 indexed citations
7.
Rack, Martin, Uthayasankaran Peralagu, A. Alian, et al.. (2024). Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity. IEEE Microwave and Wireless Technology Letters. 34(3). 298–301. 1 indexed citations
8.
Rodríguez, R., A. Sibaja-Hernandez, Uthayasankaran Peralagu, et al.. (2023). RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si. International Journal of Microwave and Wireless Technologies. 15(6). 983–992. 2 indexed citations
9.
Yu, Hao, Uthayasankaran Peralagu, A. Alian, et al.. (2023). A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. 152–155. 2 indexed citations
10.
Yu, Hao, V. Putcha, Uthayasankaran Peralagu, et al.. (2022). Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures. Journal of Applied Physics. 131(3). 6 indexed citations
11.
Yu, Hao, Bertrand Parvais, Ming Zhao, et al.. (2022). Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures. Applied Physics Letters. 120(21). 5 indexed citations
12.
Wu, Weimin, Ming‐Dou Ker, Shih‐Hung Chen, et al.. (2022). ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs. IEEE Transactions on Electron Devices. 69(4). 2180–2187. 5 indexed citations
13.
Yu, Hao, A. Alian, Uthayasankaran Peralagu, et al.. (2021). Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics. IEEE Transactions on Electron Devices. 68(11). 5559–5564. 12 indexed citations
14.
Rodríguez, R., Uthayasankaran Peralagu, A. Alian, et al.. (2020). Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs. IEEE Transactions on Electron Devices. 67(11). 4592–4596. 5 indexed citations
15.
Takakura, Kenichiro, V. Putcha, Eddy Simoen, et al.. (2020). Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors. Semiconductor Science and Technology. 36(2). 24003–24003. 2 indexed citations
16.
Simoen, Eddy, et al.. (2019). Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In 0.53 Ga 0.47 As lattice matched to InP substrates. Semiconductor Science and Technology. 34(7). 75024–75024. 2 indexed citations
17.
Hsu, Po-Chun, Eddy Simoen, Clément Merckling, et al.. (2019). The impact of extended defects on the generation and recombination lifetime in n type In .53 Ga .47 As. Journal of Physics D Applied Physics. 52(48). 485102–485102. 2 indexed citations
18.
Li, Yida, A. Alian, Maheswari Sivan, et al.. (2019). A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications. APL Materials. 7(3). 16 indexed citations
19.
20.
Ivanov, Ts., Nan Sun, J. Franco, et al.. (2016). Top-down InGaAs nanowire and fin vertical FETs with record performance. 1–2. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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