Lars‐Åke Ragnarsson

2.2k total citations
97 papers, 1.4k citations indexed

About

Lars‐Åke Ragnarsson is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Lars‐Åke Ragnarsson has authored 97 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Electrical and Electronic Engineering, 9 papers in Electronic, Optical and Magnetic Materials and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Lars‐Åke Ragnarsson's work include Semiconductor materials and devices (89 papers), Advancements in Semiconductor Devices and Circuit Design (68 papers) and Ferroelectric and Negative Capacitance Devices (34 papers). Lars‐Åke Ragnarsson is often cited by papers focused on Semiconductor materials and devices (89 papers), Advancements in Semiconductor Devices and Circuit Design (68 papers) and Ferroelectric and Negative Capacitance Devices (34 papers). Lars‐Åke Ragnarsson collaborates with scholars based in Belgium, United States and Austria. Lars‐Åke Ragnarsson's co-authors include G. Groeseneken, B. Kaczer, J. Franco, R. Degraeve, Per Lundgren, Ph. Roussel, Tibor Grasser, Eddy Simoen, Marc Heyns and Naoto Horiguchi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Lars‐Åke Ragnarsson

90 papers receiving 1.3k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Lars‐Åke Ragnarsson 1.3k 217 134 71 66 97 1.4k
W.K. Henson 954 0.7× 151 0.7× 157 1.2× 38 0.5× 66 1.0× 24 997
J.C. Lee 1.5k 1.1× 294 1.4× 150 1.1× 45 0.6× 108 1.6× 61 1.5k
Barry O’Sullivan 970 0.7× 333 1.5× 188 1.4× 99 1.4× 63 1.0× 109 1.1k
Ming-ta Hsieh 475 0.4× 174 0.8× 104 0.8× 87 1.2× 40 0.6× 23 529
Badih El-Kareh 497 0.4× 140 0.6× 70 0.5× 90 1.3× 63 1.0× 30 588
Thomas Aichinger 2.0k 1.5× 129 0.6× 129 1.0× 22 0.3× 76 1.2× 83 2.1k
C. Vrancken 939 0.7× 195 0.9× 411 3.1× 118 1.7× 33 0.5× 70 1.0k
T. Chiarella 1.3k 0.9× 147 0.7× 174 1.3× 137 1.9× 25 0.4× 109 1.3k
Katsuyoshi Washio 1.2k 0.9× 216 1.0× 215 1.6× 169 2.4× 37 0.6× 157 1.3k
P. Ranade 1.3k 1.0× 148 0.7× 220 1.6× 147 2.1× 47 0.7× 36 1.3k

Countries citing papers authored by Lars‐Åke Ragnarsson

Since Specialization
Citations

This map shows the geographic impact of Lars‐Åke Ragnarsson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lars‐Åke Ragnarsson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lars‐Åke Ragnarsson more than expected).

Fields of papers citing papers by Lars‐Åke Ragnarsson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lars‐Åke Ragnarsson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lars‐Åke Ragnarsson. The network helps show where Lars‐Åke Ragnarsson may publish in the future.

Co-authorship network of co-authors of Lars‐Åke Ragnarsson

This figure shows the co-authorship network connecting the top 25 collaborators of Lars‐Åke Ragnarsson. A scholar is included among the top collaborators of Lars‐Åke Ragnarsson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lars‐Åke Ragnarsson. Lars‐Åke Ragnarsson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gallagher, Emily, Lars‐Åke Ragnarsson, & Cédric Rolin. (2024). Sustainable Semiconductor Manufacturing: The Role of Lithography. IEEE Transactions on Semiconductor Manufacturing. 37(4). 440–444. 1 indexed citations
2.
Soulié, Jean-Philippe, Kiroubanand Sankaran, Benoît Van Troeye, et al.. (2024). Selecting alternative metals for advanced interconnects. Journal of Applied Physics. 136(17). 15 indexed citations
3.
Ragnarsson, Lars‐Åke, et al.. (2024). Environmental Analysis of RF Substrates. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 1–8. 1 indexed citations
4.
Rolin, Cédric, et al.. (2024). Where to apply sustainability optimizations in process flows?. 46–46. 1 indexed citations
5.
Wu, Zhicheng, J. Franco, A. Vandooren, et al.. (2022). LaSiO x - and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration. IEEE Transactions on Electron Devices. 69(3). 915–921. 1 indexed citations
6.
Franco, J., Jean‐François de Marneffe, A. Vandooren, et al.. (2021). Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO 2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic. Symposium on VLSI Technology. 1–2. 3 indexed citations
7.
Ronchi, N., Lars‐Åke Ragnarsson, L. Breuil, et al.. (2021). Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance. 1–2. 2 indexed citations
8.
Arimura, Hiroaki, Kurt Wostyn, Lars‐Åke Ragnarsson, et al.. (2020). (Invited) Si-Cap-Free Low-DIT SiGe Gate Stack for High-Performance pFETs. ECS Transactions. 98(5). 377–386.
9.
Arimura, Hiroaki, Harold Dekkers, Lars‐Åke Ragnarsson, et al.. (2019). Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation. IEEE Transactions on Electron Devices. 66(12). 5387–5392. 4 indexed citations
10.
Matagne, Philippe, Hiroaki Nakamura, Yoshiaki Kikuchi, et al.. (2018). DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM. 45–48. 3 indexed citations
11.
Franco, J., Subhadeep Mukhopadhyay, Pieter Weckx, et al.. (2016). Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. HAL (Le Centre pour la Communication Scientifique Directe). 15.3.1–15.3.4. 12 indexed citations
12.
Ragnarsson, Lars‐Åke, Harold Dekkers, Philippe Matagne, et al.. (2016). Zero-thickness multi work function solutions for N7 bulk FinFETs. 1–2. 12 indexed citations
13.
Groeseneken, G., J. Franco, M. Cho, et al.. (2014). BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities. 34.4.1–34.4.4. 30 indexed citations
14.
Lee, Jae Wook, Eddy Simoen, A. Veloso, et al.. (2013). Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor. ACS Applied Materials & Interfaces. 5(18). 8865–8868. 15 indexed citations
15.
Ragnarsson, Lars‐Åke, Christoph Adelmann, Yuichi Higuchi, et al.. (2012). Implementing cubic-phase HfO<inf>2</inf> with &#x03BA;-value &#x223C; 30 in low-V<inf>T</inf> replacement gate pMOS devices for improved EOT-Scaling and reliability. 91. 27–28. 9 indexed citations
16.
Tielens, Hilde, Shinji Takeoka, Laura Nyns, et al.. (2011). TDEAH/TDEAZとH 2 Oを用いたALD HfZrO x の開発. Journal of The Electrochemical Society. 158(1). 69–74. 8 indexed citations
17.
Kauerauf, T., R. Degraeve, Lars‐Åke Ragnarsson, et al.. (2011). Methodologies for sub-1nm EOT TDDB evaluation. 2A.2.1–2A.2.10. 21 indexed citations
18.
Kaczer, B., Tibor Grasser, Ph. Roussel, et al.. (2010). Origin of NBTI variability in deeply scaled pFETs. 26–32. 250 indexed citations
19.
Chiarella, T., Liesbeth Witters, A. Mercha, et al.. (2009). Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk?. VUBIR (Vrije Universiteit Brussel). 85–88. 11 indexed citations
20.
O’Connor, Robert, Vincent S. Chang, L. Pantisano, et al.. (2008). Anomalous positive-bias temperature instability of high-&#x03BA;/metal gate nMOSFET devices with Dy<inf>2</inf>O<inf>3</inf> capping. 671–672. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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