Lars‐Åke Ragnarsson

2.2k total citations
97 papers, 1.4k citations indexed

About

Lars‐Åke Ragnarsson is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Lars‐Åke Ragnarsson has authored 97 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Electrical and Electronic Engineering, 9 papers in Electronic, Optical and Magnetic Materials and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Lars‐Åke Ragnarsson's work include Semiconductor materials and devices (89 papers), Advancements in Semiconductor Devices and Circuit Design (68 papers) and Ferroelectric and Negative Capacitance Devices (34 papers). Lars‐Åke Ragnarsson is often cited by papers focused on Semiconductor materials and devices (89 papers), Advancements in Semiconductor Devices and Circuit Design (68 papers) and Ferroelectric and Negative Capacitance Devices (34 papers). Lars‐Åke Ragnarsson collaborates with scholars based in Belgium, United States and Austria. Lars‐Åke Ragnarsson's co-authors include G. Groeseneken, B. Kaczer, J. Franco, R. Degraeve, Per Lundgren, Ph. Roussel, Tibor Grasser, Eddy Simoen, Marc Heyns and Naoto Horiguchi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Lars‐Åke Ragnarsson

90 papers receiving 1.3k citations

Peers

Countries citing papers authored by Lars‐Åke Ragnarsson

Since Specialization

Citations

This map shows the geographic impact of Lars‐Åke Ragnarsson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lars‐Åke Ragnarsson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lars‐Åke Ragnarsson more than expected).

Fields of papers citing papers by Lars‐Åke Ragnarsson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lars‐Åke Ragnarsson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lars‐Åke Ragnarsson. The network helps show where Lars‐Åke Ragnarsson may publish in the future.

Co-authorship network of co-authors of Lars‐Åke Ragnarsson

This figure shows the co-authorship network connecting the top 25 collaborators of Lars‐Åke Ragnarsson. A scholar is included among the top collaborators of Lars‐Åke Ragnarsson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lars‐Åke Ragnarsson. Lars‐Åke Ragnarsson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Sustainable Semiconductor Manufacturing: The Role of Lithography 2024 ·IEEE Transactions on Semiconductor Manufacturing ·Emily Gallagher, Lars‐Åke Ragnarsson, Cédric Rolin	1
2	Selecting alternative metals for advanced interconnects 2024 ·Journal of Applied Physics ·Jean-Philippe Soulié, Kiroubanand Sankaran, Benoît Van Troeye, A. Leśniewska, Olalla Varela Pedreira, Herman Oprins, (unknown), Claudia Fleischmann, (unknown), Cédric Rolin, Lars‐Åke Ragnarsson, Kristof Croes, (unknown), Johan Swerts, Geoffrey Pourtois, Zsolt Tökei, Christoph Adelmann	15
3	Environmental Analysis of RF Substrates 2024 ·Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)) ·(unknown), (unknown), (unknown), Lars‐Åke Ragnarsson, Cédric Rolin, Jean‐Pierre Raskin, Bertrand Parvais	1
4	Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO 2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic 2021 ·Symposium on VLSI Technology ·J. Franco, Jean‐François de Marneffe, A. Vandooren, Hiroaki Arimura, Lars‐Åke Ragnarsson, (unknown), E. Dentoni Litta, Naoto Horiguchi, Kristof Croes, D. Linten, Tibor Grasser, B. Kaczer	3
5	Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance 2021 ·N. Ronchi, Lars‐Åke Ragnarsson, L. Breuil, Kaustuv Banerjee, S. R. C. McMitchell, Barry O’Sullivan, Alexey Milenin, Shreya Kundu, Murat Pak, G. Van den bosch, Jan Van Houdt	2
6	(Invited) Si-Cap-Free Low-D_IT SiGe Gate Stack for High-Performance pFETs 2020 ·ECS Transactions ·Hiroaki Arimura, Kurt Wostyn, Lars‐Åke Ragnarsson, Thierry Conard, Adrian Chasin, J. Franco, Jérôme Mitard, Naoto Horiguchi	0
7	Record Gm_SAT/SS_SAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation 2019 ·IEEE Transactions on Electron Devices ·Hiroaki Arimura, Harold Dekkers, Lars‐Åke Ragnarsson, Jérôme Mitard, V. De Heyn, D. Mocuta, Nadine Collaert, Naoto Horiguchi, Daire Cott, G. Boccardi, Roger Loo, Kurt Wostyn, Liesbeth Witters, Thierry Conard, Samuel Suhard, Dennis H. van Dorp	4
8	DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM 2018 ·Philippe Matagne, Hiroaki Nakamura, (unknown), Yoshiaki Kikuchi, Trong Huynh-Bao, Zheng Tao, (unknown), K. Devriendt, Lars‐Åke Ragnarsson, Juergen Boemmels, A. Mallik, (unknown), Farid Sebaai, (unknown), N. Jourdan, Clément Porret, D. Mocuta, (unknown), F. Masuoka	3
9	The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45% 2017 ·ECS Transactions ·Kurt Wostyn, Lars‐Åke Ragnarsson, T. Schram, Liesbeth Witters, Thierry Conard, Bastien Douhard, Danielle Vanhaeren, Frank Holsteyns, Wilfried Vandervorst, Naoto Horiguchi	1
10	Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs 2016 ·HAL (Le Centre pour la Communication Scientifique Directe) ·J. Franco, (unknown), Subhadeep Mukhopadhyay, (unknown), Pieter Weckx, Ph. Roussel, T. Chiarella, Lars‐Åke Ragnarsson, Lionel Trojman, Naoto Horiguchi, A. Spessot, D. Linten, A. Mocuta	12
11	Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation 2015 ·Hiroaki Arimura, Sonja Sioncke, Daire Cott, Jérôme Mitard, Thierry Conard, Wendy Vanherle, Roger Loo, Paola Favia, H. Bender, Johan Meersschaut, Liesbeth Witters, Hans Mertens, J. Franco, Lars‐Åke Ragnarsson, Geoffrey Pourtois, Marc Heyns, A. Mocuta, Nadine Collaert, Aaron Thean	27
12	BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities 2014 ·G. Groeseneken, J. Franco, M. Cho, B. Kaczer, M. Toledano-Luque, Ph. Roussel, T. Kauerauf, A. Alian, Jérôme Mitard, Hiroaki Arimura, Dennis Lin, Niamh Waldron, Sonja Sioncke, Liesbeth Witters, Hans Mertens, Lars‐Åke Ragnarsson, Marc Heyns, Nadine Collaert, Aaron Thean, An Steegen	30
13	Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor 2013 ·ACS Applied Materials & Interfaces ·Jae Wook Lee, Eddy Simoen, A. Veloso, (unknown), G. Boccardi, Lars‐Åke Ragnarsson, T. Chiarella, Naoto Horiguchi, G. Groeseneken, Aaron Thean	15
14	1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor 2013 ·Applied Physics Letters ·Jae Wook Lee, (unknown), Eddy Simoen, R. Ritzenthaler, M. Togo, G. Boccardi, Jérôme Mitard, Lars‐Åke Ragnarsson, T. Chiarella, A. Veloso, Naoto Horiguchi, Aaron Thean, G. Groeseneken	10
15	TDEAH/TDEAZとH 2 Oを用いたALD HfZrO x の開発 2011 ·Journal of The Electrochemical Society ·(unknown), Hilde Tielens, Shinji Takeoka, (unknown), Laura Nyns, Christoph Adelmann, Annelies Delabie, T. Schram, Lars‐Åke Ragnarsson, (unknown), L. Daté, R. Schreutelkamp, Sven Van Elshocht	8
16	Methodologies for sub-1nm EOT TDDB evaluation 2011 ·T. Kauerauf, R. Degraeve, Lars‐Åke Ragnarsson, Philippe Roussel, (unknown), G. Groeseneken, Robert O’Connor	21
17	Origin of NBTI variability in deeply scaled pFETs 2010 ·B. Kaczer, Tibor Grasser, Ph. Roussel, J. Franco, R. Degraeve, Lars‐Åke Ragnarsson, Eddy Simoen, G. Groeseneken, H. Reisinger	250
18	Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk? 2009 ·VUBIR (Vrije Universiteit Brussel) ·T. Chiarella, Liesbeth Witters, A. Mercha, C. Kerner, R. Dittrich, Michał Rakowski, C. Ortolland, Lars‐Åke Ragnarsson, Bertrand Parvais, A. De Keersgieter, S. Kubicek, A. Redolfi, R. Rooyackers, C. Vrancken, S. Brus, A. Lauwers, P. Absil, S. Biesemans, Thomas Hoffmann	11
19	Migrating from planar to FinFET for further CMOS scaling: SOI or bulk? 2009 ·VUBIR (Vrije Universiteit Brussel) ·T. Chiarella, Liesbeth Witters, A. Mercha, C. Kerner, R. Dittrich, Michał Rakowski, C. Ortolland, Lars‐Åke Ragnarsson, Bertrand Parvais, A. De Keersgieter, S. Kubicek, A. Redolfi, R. Rooyackers, C. Vrancken, S. Brus, A. Lauwers, P. Absil, S. Biesemans, Thomas Hoffmann	20
20	Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates 2007 ·IEEE Electron Device Letters ·Lars‐Åke Ragnarsson, Vincent S. Chang, H.Y. Yu, Hag‐Ju Cho, Thierry Conard, Kai Yin, Annelies Delabie, Johan Swerts, T. Schram, Stefan De Gendt, S. Biesemans	28

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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