Cor Claeys
About
In The Last Decade
Cor Claeys
580 papers receiving 5.3k citations
Peers
Comparison fields: 5 of 98
- Electrical and Electronic Engineering 5.2k
- Atomic and Molecular Physics, and Optics 807
- Biomedical Engineering 648
- Materials Chemistry 500
- Electronic, Optical and Magnetic Materials 191
Countries citing papers authored by Cor Claeys
This map shows the geographic impact of Cor Claeys's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Cor Claeys with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Cor Claeys more than expected).
Fields of papers citing papers by Cor Claeys
This network shows the impact of papers produced by Cor Claeys. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Cor Claeys. The network helps show where Cor Claeys may publish in the future.
Co-authorship network of co-authors of Cor Claeys
This figure shows the co-authorship network connecting the top 25 collaborators of Cor Claeys. A scholar is included among the top collaborators of Cor Claeys based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Cor Claeys. Cor Claeys is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 10 | |
| 2 | 2 | |
| 3 | 9 | |
| 4 | 3 | |
| 5 | Trends and challenges in micro- and nanoelectronics for the next decade | 4 |
| 6 | Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth | 1 |
| 7 | 3 | |
| 8 | Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques | 2 |
| 9 | Microelectronics Technology and Devices : SBMICRO 2007 | 1 |
| 10 | 1 | |
| 11 | Low temperature electronics and low temperature cofired ceramic based electronic devices : proceedings of the seventh International Symposium on Low Temperature Electronics and the International Symposium on Low Temperature Cofired CeramicBbased Electronic Devices | 2 |
| 12 | Radiation Damage of InGaAs Photodiodes by High-Temperature Electron and Neutron Irradiation | 1 |
| 13 | High purity silicon VIII : proceedings of the international symposium | 2 |
| 14 | Degradation of deep submicron partially depleted soi CMOS transistors under MeV proton or gamma irradiation | 1 |
| 15 | Impact of irradiations performed at liquid helium temperatures on the operation of 0.7 /spl mu/m CMOS devices and read-out circuits | 1 |
| 16 | Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 K | 1 |
| 17 | Proceedings of the fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity | 1 |
| 18 | Low frequency noise in partially depleted SOI twin-MOSFET's | 1 |
| 19 | Improvement of output impedance in SOI MOSFETs | 1 |
| 20 | The Influence of Lifetime on the Lateral Pasitic Bipolar Transistors in CMOS | 1 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.