J. Franco

5.7k total citations
239 papers, 4.0k citations indexed

About

J. Franco is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Franco has authored 239 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 236 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in J. Franco's work include Semiconductor materials and devices (225 papers), Advancements in Semiconductor Devices and Circuit Design (203 papers) and Integrated Circuits and Semiconductor Failure Analysis (109 papers). J. Franco is often cited by papers focused on Semiconductor materials and devices (225 papers), Advancements in Semiconductor Devices and Circuit Design (203 papers) and Integrated Circuits and Semiconductor Failure Analysis (109 papers). J. Franco collaborates with scholars based in Belgium, Austria and United States. J. Franco's co-authors include B. Kaczer, Tibor Grasser, G. Groeseneken, Ph. Roussel, H. Reisinger, M. Toledano-Luque, Naoto Horiguchi, Wolfgang Goes, P.-J. Wagner and Michael Nelhiebel and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Access.

In The Last Decade

J. Franco

232 papers receiving 3.9k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
J. Franco 3.9k 347 249 178 166 239 4.0k
H. Reisinger 4.1k 1.0× 552 1.6× 448 1.8× 104 0.6× 163 1.0× 136 4.3k
Bertrand Parvais 2.6k 0.6× 173 0.5× 241 1.0× 315 1.8× 332 2.0× 196 2.7k
D. Linten 2.4k 0.6× 260 0.7× 103 0.4× 60 0.3× 180 1.1× 173 2.5k
Ph. Roussel 3.6k 0.9× 570 1.6× 223 0.9× 58 0.3× 176 1.1× 150 3.8k
Huichu Liu 1.3k 0.3× 369 1.1× 250 1.0× 107 0.6× 173 1.0× 53 1.7k
Chenming Hu 3.3k 0.8× 551 1.6× 330 1.3× 42 0.2× 288 1.7× 65 3.4k
T. Ghani 2.1k 0.5× 481 1.4× 359 1.4× 40 0.2× 447 2.7× 33 2.3k
A. Mercha 3.4k 0.9× 161 0.5× 202 0.8× 55 0.3× 485 2.9× 195 3.5k
N. Kasai 1.1k 0.3× 294 0.8× 780 3.1× 152 0.9× 102 0.6× 75 1.6k
Geert Hellings 1.8k 0.4× 242 0.7× 272 1.1× 49 0.3× 394 2.4× 204 2.0k

Countries citing papers authored by J. Franco

Since Specialization
Citations

This map shows the geographic impact of J. Franco's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Franco with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Franco more than expected).

Fields of papers citing papers by J. Franco

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Franco. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Franco. The network helps show where J. Franco may publish in the future.

Co-authorship network of co-authors of J. Franco

This figure shows the co-authorship network connecting the top 25 collaborators of J. Franco. A scholar is included among the top collaborators of J. Franco based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Franco. J. Franco is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
O’Sullivan, Barry, A. Alian, A. Sibaja-Hernandez, et al.. (2024). DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. 1–9. 1 indexed citations
2.
Zhao, Ying, Ben Kaczer, Nouredine Rassoul, et al.. (2024). Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. 1–6. 3 indexed citations
3.
Waldhoer, Dominic, Christian Schleich, Alexander Grill, et al.. (2023). Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. Microelectronics Reliability. 146. 115004–115004. 18 indexed citations
4.
Brown, James, Rui Gao, Zhigang Ji, et al.. (2023). A Pragmatic Model to Predict Future Device Aging. IEEE Access. 11. 127725–127736. 1 indexed citations
5.
Diaz-Fortuny, J., et al.. (2023). Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology. IEEE Transactions on Device and Materials Reliability. 23(3). 346–354. 5 indexed citations
6.
Hiblot, Gaspard, Narendra Parihar, Emmanuel Dupuy, et al.. (2021). Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices. IEEE Transactions on Device and Materials Reliability. 21(2). 192–198. 1 indexed citations
7.
Wu, Zhicheng, J. Franco, Hiroaki Arimura, et al.. (2021). 3D sequential CMOS top tier devices demonstration using a low temperature Smart Cut™ Si layer transfer. 1 indexed citations
8.
Franco, J., Jean‐François de Marneffe, A. Vandooren, et al.. (2021). Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO 2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic. Symposium on VLSI Technology. 1–2. 3 indexed citations
9.
10.
Arimura, Hiroaki, Kurt Wostyn, Lars‐Åke Ragnarsson, et al.. (2020). (Invited) Si-Cap-Free Low-DIT SiGe Gate Stack for High-Performance pFETs. ECS Transactions. 98(5). 377–386.
11.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High-k SiGe Transistors–Part II: Theory. IEEE Transactions on Electron Devices. 64(5). 2099–2105. 13 indexed citations
12.
Gao, Rui, Zhigang Ji, J. F. Zhang, et al.. (2017). NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling. IEEE Transactions on Electron Devices. 64(10). 4011–4017. 20 indexed citations
13.
Gao, Rui, Zhigang Ji, Meng Duan, et al.. (2017). Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation. IEEE Transactions on Electron Devices. 64(4). 1467–1473. 27 indexed citations
14.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental. IEEE Transactions on Electron Devices. 64(5). 2092–2098. 20 indexed citations
15.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2016). Si-passivated Ge nFET towards a reliable Ge CMOS. 1 indexed citations
16.
Ivanov, Ts., Nan Sun, J. Franco, et al.. (2016). Top-down InGaAs nanowire and fin vertical FETs with record performance. 1–2. 7 indexed citations
17.
Grasser, Tibor, K. Rott, H. Reisinger, et al.. (2014). A unified perspective of RTN and BTI. 4A.5.1–4A.5.7. 75 indexed citations
18.
Kükner, Halil, Pieter Weckx, J. Franco, et al.. (2014). Scaling of BTI reliability in presence of Time-zero Variability Pathfinding from planar FET to advanced 3-D FinFET nodes. 1 indexed citations
19.
Toledano-Luque, M., B. Kaczer, J. Franco, et al.. (2013). Degradation of time dependent variability due to interface state generation. Symposium on VLSI Technology. 41 indexed citations
20.
Luque, María Toledano, B. Kaczer, Tibor Grasser, et al.. (2012). Toward a streamlined projection of small Device BTI lifetime distributions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 31(1). 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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