A. Lauwers

2.3k citations

107 papers · 1.7k · h-index 22

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Electrical and Electronic Engineering 96
- Semiconductor materials and devices 63
- Silicon and Solar Cell Technologies 49
- Advancements in Semiconductor Devices and Circuit Design 21
- Integrated Circuits and Semiconductor Failure Analysis 20
Atomic and Molecular Physics, and Optics 81
- Semiconductor materials and interfaces 81
- Surface and Thin Film Phenomena 8

Co-authors: Karen Maex (56 shared papers)J. A. Kittl (38 shared papers)Richard Lindsay (22 shared papers)C. Vrancken (28 shared papers)An Steegen (11 shared papers)H. Bender (11 shared papers)O. Chamirian (17 shared papers)M. de Potter (15 shared papers)
Journals: Microelectronic Engineering (17 papers)IEEE Electron Device Letters (10 papers)Applied Physics Letters (7 papers)Applied Surface Science (3 papers)Microelectronics Reliability (3 papers)
Partner nations: Belgium United States Netherlands

In The Last Decade

A. Lauwers

98 papers receiving 1.6k citations

Peers

Countries citing papers authored by A. Lauwers

Since Specialization

Citations

This map shows the geographic impact of A. Lauwers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Lauwers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Lauwers more than expected).

Fields of papers citing papers by A. Lauwers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Lauwers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Lauwers. The network helps show where A. Lauwers may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Lauwers, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Lauwers Line = papers co-authored together A. Lauwers links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Lauwers, An Steegen, Muriel de Potter, Richard Lindsay, A. Satta, H. Bender, Karen Maex	2001	118
2	Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Solid-State Electronics ·T. Chiarella, Liesbeth Witters, A. Mercha, C. Kerner, Michał Rakowski, C. Ortolland, (unknown), Bertrand Parvais, A. De Keersgieter, Stefan Kubicek, A. Redolfi, C. Vrancken, S. Brus, A. Lauwers, P. Absil, S. Biesemans, Thomas Hoffmann	2010	99
3	Ni- and Co-based silicides for advanced CMOS applications Microelectronic Engineering ·J. A. Kittl, A. Lauwers, O. Chamirian, Mark van Dal, A. Akheyar, M. de Potter, Richard Lindsay, Karen Maex	2003	94
4	In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Journal of Applied Physics ·V. S. Teodorescu, L. C. Nistor, H. Bender, An Steegen, A. Lauwers, Karen Maex, J. van Landuyt	2001	81
5	Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range IEEE Electron Device Letters ·N. Stavitski, M.J.H. van Dal, A. Lauwers, C. Vrancken, Alexey Y. Kovalgin, R.A.M. Wolters	2008	77
6	Structural information on hyaluronic acid solutions as studied by probe diffusion experiments Macromolecules ·Stefaan C. De Smedt, A. Lauwers, J. Demeester, Yves Engelborghs, Gilbert De Mey, Mingliang Du	1994	69
7	Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates IEEE Electron Device Letters ·J. A. Kittl, Małgorzata Pawlak, A. Lauwers, C. Demeurisse, Karl Opsomer, K.G. Anil, C. Vrancken, M.J.H. van Dal, A. Veloso, S. Kubicek, P. Absil, Karen Maex, S. Biesemans	2005	56
8	Silicides and germanides for nano-CMOS applications Materials Science and Engineering B ·J. A. Kittl, Karl Opsomer, C. Torregiani, C. Demeurisse, S. Mertens, D.P. Brunco, M.J.H. van Dal, A. Lauwers	2008	54
9	Ni based silicides for 45nm CMOS and beyond Materials Science and Engineering B ·A. Lauwers, J. A. Kittl, M.J.H. van Dal, O. Chamirian, Małgorzata Pawlak, Muriel de Potter, Richard Lindsay, Toon Raymakers, Xavier Llimona i Pagès, Bencherki Mebarki, T. Mandrekar, Karen Maex	2004	53
10	Viscoelastic and transient network properties of hyaluronic acid as a function of the concentration. PubMed ·S C De Smedt, Philippe Dekeyser, V Ribitsch, A. Lauwers, J. Demeester	1993	50
11	Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide Microelectronic Engineering ·A. Lauwers, M. de Potter, O. Chamirian, Richard Lindsay, C. Demeurisse, C. Vrancken, Karen Maex	2002	47
12	Self-aligned CoSi/sub 2/ for 0.18 μm and below IEEE Transactions on Electron Devices ·Karen Maex, A. Lauwers, Paul R. Besser, Eiichi Kondoh, M. de Potter, An Steegen	1999	41
13	A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS MRS Proceedings ·Richard Lindsay, B. J. Pawlak, J. A. Kittl, K. Henson, C. Torregiani, Simone Giangrandi, R. Surdeanu, W. Vandervorst, A. J. Mayur, Jason F. Ross, S. McCoy, J. Gelpey, K. Elliott, Xavier Llimona i Pagès, A. Satta, A. Lauwers, P.A. Stolk, Karen Maex	2003	36
14	Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies Microelectronic Engineering ·A. Lauwers, Paul R. Besser, Tomasz Gutt, A. Satta, M. de Potter, Richard Lindsay, N. Roelandts, Fred Loosen, S. Jin, H. Bender, Michele Stucchi, C. Vrancken, B. Deweerdt, Karen Maex	2000	34
15	Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applications K.G. Anil, A. Veloso, Stefan Kubicek, T. Schram, E. Augendre, Jean‐François de Marneffe, K. Devriendt, A. Lauwers, S. Brus, K. Henson, S. Biesemans	2004	30
16	Thickness scaling issues of Ni silicide Microelectronic Engineering ·O. Chamirian, J. A. Kittl, A. Lauwers, Olivier Richard, Mark van Dal, Karen Maex	2003	29
17	Local identification and mapping of the C49 and C54 titanium phases in submicron structures by micro-Raman spectroscopy Applied Physics Letters ·Ingrid De Wolf, David Howard, A. Lauwers, Karen Maex, H.E. Maes	1997	29
18	Electrical transport in (100)CoSi2/Si contacts Journal of Applied Physics ·A. Lauwers, K. Kyllesbech Larsen, M. Van Hove, R. Verbeeck, Karen Maex, Mark C. W. van Rossum, A.S. Vercaemst, R. Van Meirhaeghe, F. Cardon	1995	27
19	Ni fully silicided gates for 45nm CMOS applications Microelectronic Engineering ·J. A. Kittl, A. Lauwers, Małgorzata Pawlak, M.J.H. van Dal, A. Veloso, K.G. Anil, Geoffrey Pourtois, C. Demeurisse, T. Schram, Bert Brijs, Muriel de Potter, C. Vrancken, Karen Maex	2005	24
20	Silicide induced pattern density and orientation dependent transconductance in MOS transistors An Steegen, Michele Stucchi, A. Lauwers, Karen Maex	2003	23

About A. Lauwers

A. Lauwers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Mechanical Engineering and Electronic, Optical and Magnetic Materials, having authored 107 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (81 papers), Semiconductor materials and devices (63 papers), Silicon and Solar Cell Technologies (49 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers), Silicon Nanostructures and Photoluminescence (10 papers), Surface and Thin Film Phenomena (8 papers) and Copper Interconnects and Reliability (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.1k citations), Electrical and Electronic Engineering (1.4k citations), Materials Chemistry (259 citations), Biomedical Engineering (216 citations) and Structural Biology (6 citations). A. Lauwers has collaborated with scholars based in Belgium, United States and Netherlands. Frequent co-authors include Karen Maex, J. A. Kittl, Richard Lindsay, C. Vrancken, An Steegen, H. Bender, O. Chamirian, M. de Potter, M.J.H. van Dal and C. Demeurisse. Their work appears in journals such as Microelectronic Engineering, IEEE Electron Device Letters, Applied Physics Letters, Applied Surface Science and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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