A. Lauwers

2.3k total citations
107 papers, 1.7k citations indexed

About

A. Lauwers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. Lauwers has authored 107 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 96 papers in Electrical and Electronic Engineering, 81 papers in Atomic and Molecular Physics, and Optics and 12 papers in Materials Chemistry. Recurrent topics in A. Lauwers's work include Semiconductor materials and interfaces (81 papers), Semiconductor materials and devices (63 papers) and Silicon and Solar Cell Technologies (49 papers). A. Lauwers is often cited by papers focused on Semiconductor materials and interfaces (81 papers), Semiconductor materials and devices (63 papers) and Silicon and Solar Cell Technologies (49 papers). A. Lauwers collaborates with scholars based in Belgium, United States and Netherlands. A. Lauwers's co-authors include Karen Maex, J. A. Kittl, Richard Lindsay, C. Vrancken, An Steegen, H. Bender, O. Chamirian, M.J.H. van Dal, M. de Potter and C. Demeurisse and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Macromolecules.

In The Last Decade

A. Lauwers

98 papers receiving 1.6k citations

Peers

A. Lauwers

EEE

AMPO

Kazuhisa Sueoka Japan

Simon M. Wood United Kingdom

D. Vignaud France

F. Ajustron France

M. Tortonese United States

S. Akamine United States

Wenting Wang China

Yuxin Song China

D. Korzec Germany

Patrick J. Moyer United States

Kazuhisa Sueoka Japan

A. Lauwers

352 ×0.3

EEE

681 ×0.6

AMPO

310 ×1.2

218 ×1.0

32 ×0.4

Citations per year, relative to A. Lauwers A. Lauwers (= 1×) peers Kazuhisa Sueoka

Countries citing papers authored by A. Lauwers

Since Specialization

Citations

This map shows the geographic impact of A. Lauwers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Lauwers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Lauwers more than expected).

Fields of papers citing papers by A. Lauwers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Lauwers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Lauwers. The network helps show where A. Lauwers may publish in the future.

Co-authorship network of co-authors of A. Lauwers

This figure shows the co-authorship network connecting the top 25 collaborators of A. Lauwers. A scholar is included among the top collaborators of A. Lauwers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Lauwers. A. Lauwers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Moor, Piet De, L. Haspeslagh, P. Boulenc, et al.. (2014). Enhanced time delay integration imaging using embedded CCD in CMOS technology. 4.6.1–4.6.4. 16 indexed citations

Chiarella, T., Liesbeth Witters, A. Mercha, et al.. (2010). Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession. Solid-State Electronics. 54(9). 855–860. 99 indexed citations

Chiarella, T., Liesbeth Witters, A. Mercha, et al.. (2009). Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk?. VUBIR (Vrije Universiteit Brussel). 85–88. 11 indexed citations

Chiarella, T., Liesbeth Witters, A. Mercha, et al.. (2009). Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?. VUBIR (Vrije Universiteit Brussel). 84–87. 20 indexed citations

Yu, H.Y., E. Augendre, A. De Keersgieter, et al.. (2007). Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs. IEEE Electron Device Letters. 28(2). 123–125. 13 indexed citations

Yu, H.Y., A. Veloso, A. Lauwers, et al.. (2007). The Application of an Ultrathin ALD HfSiON Cap Layer on SiON Dielectrics for Ni-FUSI CMOS Technology Targeting at Low-Power Applications. IEEE Electron Device Letters. 28(7). 634–636. 1 indexed citations

Kittl, J. A., B. J. O’Sullivan, V. Kaushik, et al.. (2007). Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications. Applied Physics Letters. 90(3). 8 indexed citations

Benedetti, A., H. Bender, A. Lauwers, C. Torregiani, & Karen Maex. (2006). Effects of surface relaxation on convergent‐beam electron diffraction analysis of stress in silicon. Journal of Microscopy. 223(3). 249–252. 5 indexed citations

Kittl, J. A., A. Lauwers, A. Veloso, et al.. (2006). CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON. IEEE Electron Device Letters. 27(12). 966–968. 14 indexed citations

10.

Kittl, J. A., A. Lauwers, Mark van Dal, et al.. (2006). Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies. ECS Transactions. 3(2). 233–246. 1 indexed citations

11.

Veloso, A., K.G. Anil, S. Brus, et al.. (2005). Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETs. 855–858. 13 indexed citations

12.

Anil, K.G., A. Veloso, Stefan Kubicek, et al.. (2004). Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applications. 190–191. 30 indexed citations

13.

Lauwers, A., M. de Potter, O. Chamirian, et al.. (2002). Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide. Microelectronic Engineering. 64(1-4). 131–142. 47 indexed citations

14.

Lauwers, A., et al.. (2001). Electrical Performance and Scalability of Ni-monosilicide towards sub 0.13 μm Technologies. MRS Proceedings. 670. 1 indexed citations

15.

Maex, Karen, A. Lauwers, Paul R. Besser, et al.. (1999). Self-aligned CoSi/sub 2/ for 0.18 μm and below. IEEE Transactions on Electron Devices. 46(7). 1545–1550. 41 indexed citations

16.

Maex, Karen, et al.. (1998). The Control and Impact of Processing Ambient During RTP. MRS Proceedings. 514. 2 indexed citations

17.

Wolf, Ingrid De, David Howard, Mahmoud Rasras, et al.. (1997). A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy. Microelectronics Reliability. 37(10-11). 1591–1594. 7 indexed citations

18.

Lauwers, A., et al.. (1995). bilayers in salicide technology: electrical evaluation. Applied Surface Science. 91(1-4). 12–18. 2 indexed citations

19.

Lauwers, A., K. Kyllesbech Larsen, M. Van Hove, et al.. (1995). Electrical transport in (100)CoSi2/Si contacts. Journal of Applied Physics. 77(6). 2525–2536. 27 indexed citations

20.

Lauwers, A., et al.. (1993). Viscoelastic and transient network properties of hyaluronic acid as a function of the concentration.. PubMed. 30(1). 31–41. 50 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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