Isabelle Ferain

8.9k citations

105 papers · 6.7k indexed · 4 hit papers · h-index 29

Impact in

Electrical and Electronic Engineering top 0.5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Thin-Film Transistor Technologies
Biomedical Engineering top 1%
- Nanowire Synthesis and Applications

Papers in

Electrical and Electronic Engineering 104
- Semiconductor materials and devices 93
- Advancements in Semiconductor Devices and Circuit Design 87
- Integrated Circuits and Semiconductor Failure Analysis 25
- Ferroelectric and Negative Capacitance Devices 15
- Silicon Carbide Semiconductor Technologies 10
- 3D IC and TSV technologies 8
Biomedical Engineering 37
- Nanowire Synthesis and Applications 33

Co-authors: Jean-Pierre Colinge Nima Dehdashti Akhavan Ran Yan Pedram Razavi Chi‐Woo Lee Aryan Afzalian Cynthia A. Colinge B. O'Neill
Journals: Applied Physics Letters (12 papers)IEEE Transactions on Electron Devices (12 papers)Solid-State Electronics (7 papers)Journal of Applied Physics (4 papers)Microelectronic Engineering (3 papers)
Partner nations: Ireland Belgium United States

In The Last Decade

Isabelle Ferain

103 papers receiving 6.5k citations

Hit Papers

align trajectories log scale

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors 2011 · 747 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2011 Nature
2010 Nature Nanotechnology
2009 Applied Physics Letters
2009 Solid-State Electronics

Peers

Countries citing papers authored by Isabelle Ferain

Since Specialization

Citations

This map shows the geographic impact of Isabelle Ferain's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Isabelle Ferain with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Isabelle Ferain more than expected).

Fields of papers citing papers by Isabelle Ferain

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Isabelle Ferain. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Isabelle Ferain. The network helps show where Isabelle Ferain may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Isabelle Ferain, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Isabelle Ferain Line = papers co-authored together Isabelle Ferain links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Compliant Substrate Chalmers Research (Chalmers University of Technology) ·Anke Sanz‐Velasco, Cristina Rusu, Isabelle Ferain, Cindy Colinge, Mark S. Goorsky	2012	1
2	Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors Applied Physics Letters ·Tamara Rudenko, A. N. Nazarov, Isabelle Ferain, Samaresh Das, Ran Yu, Sylvain Barraud, Pedram Razavi	2012	35
3	Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates IEEE Transactions on Electron Devices ·Ran Yu, Samaresh Das, Isabelle Ferain, Pedram Razavi, Maryam Shayesteh, Abhinav Kranti, Ray Duffy, Jean-Pierre Colinge	2012	29
4	Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors Rodrigo T. Doria, Renan Trevisoli, Michelly de Souza, Isabelle Ferain, Samaresh Das, Marcelo Antonio Pavanello	2012	8
5	Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors Nature ·Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge Hit paper breakdown →	2011	747
6	Junctionless Nanowire Transistor (JNT): Properties and design guidelines Solid-State Electronics ·J.-P. Colinge, Abhinav Kranti, Ran Yan, Christopher Lee, Isabelle Ferain, R. Yu, Nima Dehdashti Akhavan, Pedram Razavi	2011	349
7	Junctionless Multiple-Gate Transistors for Analog Applications IEEE Transactions on Electron Devices ·Rodrigo T. Doria, Marcelo Antonio Pavanello, Renan Trevisoli, Michelly de Souza, Chi‐Woo Lee, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Abhinav Kranti, Jean-Pierre Colinge	2011	204
8	Nanowire transistors without junctions Nature Nanotechnology ·Jean-Pierre Colinge, Chi‐Woo Lee, Aryan Afzalian, Nima Dehdashti Akhavan, Ran Yan, Isabelle Ferain, Pedram Razavi, B. O'Neill, Alan Blake, Mary White, Anne-Marie Kelleher, Brendan McCarthy, Richard Murphy Hit paper breakdown →	2010	1844
9	Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs IEEE Transactions on Electron Devices ·Nima Dehdashti Akhavan, Aryan Afzalian, Chi‐Woo Lee, Ran Yan, Isabelle Ferain, Pedram Razavi, Giorgos Fagas, Jean-Pierre Colinge	2010	11
10	High-Temperature Performance of Silicon Junctionless MOSFETs IEEE Transactions on Electron Devices ·Chi‐Woo Lee, Adrien Borne, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Pedram Razavi, Jean-Pierre Colinge	2010	330
11	Mobility improvement in nanowire junctionless transistors by uniaxial strain Applied Physics Letters ·Jean‐Pierre Raskin, Jean-Pierre Colinge, Isabelle Ferain, Abhinav Kranti, Chi‐Woo Lee, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu	2010	32
12	Low temperature germanium to silicon direct wafer bonding using free radical exposure Applied Physics Letters ·S Wilk-Schank, Isabelle Ferain, Викторовна Анна Круговая, Michael A. Morris, Mark S. Goorsky, Cindy Colinge	2010	37
13	Developing a Wafer Level Gold-Polysilicon Eutectic Bond Process to Protect Sensitive Electronic Devices ECS Transactions ·А.Б. Самойлов, Michael P. Flynn, S Wilk-Schank, Ran Yu, Isabelle Ferain, Cindy Colinge, Andreas Demosthenous, Nick Donaldson	2010	2
14	SOI gated resistor: CMOS without junctions J.-P. Colinge, Christopher Lee, Aryan Afzalian, Nima Dehdashti Akhavan, Ran Yan, Isabelle Ferain, Pedram Razavi, B. O'Neill, Alan Blake, Mark White, 高兆蔚, Brendan McCarthy, R.A. Murphy	2009	115
15	The device architecture dilemma for CMOS technologies: Opportunities & challenges of finFET over planar MOSFET VUBIR (Vrije Universiteit Brussel) ·Bertrand Parvais, A. Mercha, Nadine Collaert, R. Rooyackers, Isabelle Ferain, M. Jurczak, Vaidyanathan Subramanian, A. De Keersgieter, T. Chiarella, C. Kerner, Liesbeth Witters, S. Biesemans, T. Hoffman	2009	29
16	Effect of Free Radical Activation for Low Temperature Si to Si Wafer Bonding Journal of The Electrochemical Society ·S Wilk-Schank, Isabelle Ferain, Cindy Colinge	2009	11
17	Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering Solid-State Electronics ·Isabelle Ferain, Ray Duffy, Nadine Collaert, M.J.H. van Dal, Bartek Pawlak, Barry O’Sullivan, Liesbeth Witters, R. Rooyackers, Thierry Conard, M. Popovici, Sven Van Elshocht, M. Kaiser, R.G.R. Weemaes, Johan Swerts, M. Jurczak, R.J.P. Lander, K. De Meyer	2009	5
18	Capping-metal gate integration technology for multiple-V<inf>T</inf> CMOS in MuGFETs A. Veloso, Van Der Sand, M. Demand, Isabelle Ferain, Харьковский государственный университет им. А.М. Горького, B. Kaczer, Ph. Roussel, Christoph Adelmann, S. Brus, Olivier Richard, H. Bender, Thierry Conard, Rita Vos, R. Rooyackers, Sven Van Elshocht, Nadine Collaert, K. De Meyer, S. Biesemans, M. Jurczak	2008	2
19	Treshold voltage modulation in FinFET devices through Arsenic Ion Implantation into TiN/HfSiON gate stack Van Der Sand, Харьковский государственный университет им. А.М. Горького, Isabelle Ferain, Tamer San, Ronald Campoverde, C. Kerner, Nadine Collaert, K. De Meyer, M. Jurczak	2007	7
20	Tall triple-gate devices with TiN/HfO/sub 2/ gate stack Nadine Collaert, M. Demand, Isabelle Ferain, J. G. Lisoni, Ronald Campoverde, Paul Zimmerman, Leonel Lobo F, T. Schram, G. Mannaert, M. W. Goodwin, Jacob C. Hooker, 穀関根, F. H. Palmer, 黄玉贵, Stefan De Gendt, Werner Boullart, M. Jurczak, S. Biesemans	2005	38

About Isabelle Ferain

Isabelle Ferain is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Hardware and Architecture and Electronic, Optical and Magnetic Materials, having authored 105 papers that have together received 6.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (93 papers), Advancements in Semiconductor Devices and Circuit Design (87 papers), Nanowire Synthesis and Applications (33 papers), Integrated Circuits and Semiconductor Failure Analysis (25 papers), Ferroelectric and Negative Capacitance Devices (15 papers), Silicon Carbide Semiconductor Technologies (10 papers), Quantum and electron transport phenomena (10 papers) and 3D IC and TSV technologies (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (6.4k citations), Biomedical Engineering (2.4k citations), Atomic and Molecular Physics, and Optics (540 citations), Materials Chemistry (589 citations) and Bioengineering (61 citations). Isabelle Ferain has collaborated with scholars based in Ireland, Belgium and United States. Frequent co-authors include Jean-Pierre Colinge, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Chi‐Woo Lee, Aryan Afzalian, Cynthia A. Colinge, B. O'Neill, Brendan McCarthy and Alan Blake. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, Solid-State Electronics, Journal of Applied Physics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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