M. Aoulaiche

1.9k total citations
145 papers, 1.4k citations indexed

About

M. Aoulaiche is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Aoulaiche has authored 145 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 144 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Aoulaiche's work include Semiconductor materials and devices (137 papers), Advancements in Semiconductor Devices and Circuit Design (123 papers) and Integrated Circuits and Semiconductor Failure Analysis (55 papers). M. Aoulaiche is often cited by papers focused on Semiconductor materials and devices (137 papers), Advancements in Semiconductor Devices and Circuit Design (123 papers) and Integrated Circuits and Semiconductor Failure Analysis (55 papers). M. Aoulaiche collaborates with scholars based in Belgium, Brazil and United States. M. Aoulaiche's co-authors include G. Groeseneken, Eddy Simoen, B. Kaczer, Cor Claeys, M. Jurczak, Michel Houssa, R. Degraeve, Nadine Collaert, T. Kauerauf and João Antônio Martino and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

M. Aoulaiche

141 papers receiving 1.3k citations

Peers

M. Aoulaiche

EEE

AMPO

EOMM

T. Nigam United States

F. Monsieur France

F. Schanovsky Austria

Pragya Kushwaha India

Wolfgang Goes Austria

Alexander Grill Belgium

M. Denais France

F. Arnaud France

T. Chiarella Belgium

Abhisek Dixit India

T. Nigam United States

M. Aoulaiche

1.3k ×1.0

EEE

191 ×1.4

80 ×0.9

AMPO

38 ×0.7

85 ×2.7

EOMM

Citations per year, relative to M. Aoulaiche M. Aoulaiche (= 1×) peers T. Nigam

Countries citing papers authored by M. Aoulaiche

Since Specialization

Citations

This map shows the geographic impact of M. Aoulaiche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Aoulaiche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Aoulaiche more than expected).

Fields of papers citing papers by M. Aoulaiche

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Aoulaiche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Aoulaiche. The network helps show where M. Aoulaiche may publish in the future.

Co-authorship network of co-authors of M. Aoulaiche

This figure shows the co-authorship network connecting the top 25 collaborators of M. Aoulaiche. A scholar is included among the top collaborators of M. Aoulaiche based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Aoulaiche. M. Aoulaiche is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Fang, Wen, et al.. (2015). Random telegraph noise: The key to single defect studies in nano-devices. Thin Solid Films. 613. 2–5. 9 indexed citations

Popovici, M., A. Redolfi, B. Kaczer, et al.. (2014). Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory. Applied Physics Letters. 104(8). 32 indexed citations

Sasaki, K. R. A., M. Aoulaiche, Eddy Simoen, Cor Claeys, & João Antônio Martino. (2014). Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode. 1. 1–3. 3 indexed citations

Aoulaiche, M., Eddy Simoen, Liesbeth Witters, et al.. (2013). Floating body retention analysis for 1T-DRAM. 1 indexed citations

Martino, João Antônio, B. Cretu, Jean‐Marc Routoure, et al.. (2013). Low-Frequency Noise in High-K and SiO₂ UTBOX SOI nMOSFETS. ECS Transactions. 52(1). 87–92. 1 indexed citations

Martino, João Antônio, M. Aoulaiche, A. Veloso, et al.. (2013). Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation. Solid-State Electronics. 91. 53–58. 2 indexed citations

Sasaki, K. R. A., et al.. (2013). The Generation Rate Analysis of Different S/D Junction Engineering in Scaled UTBOX 1T-DRAM. ECS Transactions. 53(5). 195–201. 1 indexed citations

Martino, João Antônio, et al.. (2013). (Invited) Transistor-Based Extraction of Carrier Lifetime and Interface Traps Densities in Silicon-on-Insulator Materials. ECS Transactions. 50(5). 225–236. 4 indexed citations

Aoulaiche, M., Eddy Simoen, C. Caillat, et al.. (2012). Reliability and retention of floating body RAM on bulk FinFET. 1(2). 33–40. 2 indexed citations

10.

Mahatme, N. N., En Xia Zhang, Robert A. Reed, et al.. (2012). Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs. IEEE Transactions on Nuclear Science. 59(6). 2966–2973. 18 indexed citations

11.

Sasaki, K. R. A., et al.. (2012). Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation. 1–4. 8 indexed citations

12.

Aoulaiche, M., A. Veloso, Eddy Simoen, et al.. (2012). Temperature activation of UTBOX SOI device characteristics with different source/drain engineering. 61–62. 3 indexed citations

13.

Collaert, Nadine, M. Aoulaiche, A. De Keersgieter, et al.. (2011). Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells. Solid-State Electronics. 65-66. 205–210. 4 indexed citations

14.

Martino, João Antônio, et al.. (2011). Behavior of triple-gate Bulk FinFETs with and without DTMOS operation. Solid-State Electronics. 71. 63–68. 23 indexed citations

15.

Simoen, Eddy, M. Aoulaiche, Nadine Collaert, & C. Claeys. (2011). Low-Frequency Noise Study of p-Channel Bulk MuGFETs. ECS Transactions. 39(1). 53–60. 7 indexed citations

16.

Collaert, Nadine, M. Aoulaiche, A. De Keersgieter, et al.. (2010). Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells. 154–157. 1 indexed citations

17.

Lu, Zhichao, Nadine Collaert, M. Aoulaiche, et al.. (2010). Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages. 16.6.1–16.6.3. 30 indexed citations

18.

Ortolland, C., T. Chiarella, Stefan Kubicek, et al.. (2008). Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability. 186–187. 4 indexed citations

19.

Aoulaiche, M., Michel Houssa, Thierry Conard, et al.. (2007). Postdeposition-Anneal Effect on Negative Bias Temperature Instability in HfSiON Gate Stacks. IEEE Transactions on Device and Materials Reliability. 7(1). 146–151. 10 indexed citations

20.

Ortolland, C., L.-Å. Ragnarsson, Paola Favia, et al.. (2006). Optimized ultra-low thermal budget process flow for advanced High-K / Metal gate first CMOS using laser-annealing technology. Symposium on VLSI Technology. 38–39. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact