Sonja Sioncke

2.6k total citations
93 papers, 1.7k citations indexed

About

Sonja Sioncke is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Sonja Sioncke has authored 93 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 78 papers in Electrical and Electronic Engineering, 36 papers in Atomic and Molecular Physics, and Optics and 25 papers in Materials Chemistry. Recurrent topics in Sonja Sioncke's work include Semiconductor materials and devices (70 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Semiconductor materials and interfaces (24 papers). Sonja Sioncke is often cited by papers focused on Semiconductor materials and devices (70 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Semiconductor materials and interfaces (24 papers). Sonja Sioncke collaborates with scholars based in Belgium, United States and Germany. Sonja Sioncke's co-authors include Thierry Verbiest, André Persoons, Marc Meuris, Annelies Delabie, Matty Caymax, Marc Heyns, Guy Brammertz, Koen Martens, Thomas J. Katz and Sven Van Elshocht and has published in prestigious journals such as Advanced Materials, Angewandte Chemie International Edition and The Journal of Chemical Physics.

In The Last Decade

Sonja Sioncke

93 papers receiving 1.7k citations

Peers

Countries citing papers authored by Sonja Sioncke

Since Specialization

Citations

This map shows the geographic impact of Sonja Sioncke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sonja Sioncke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sonja Sioncke more than expected).

Fields of papers citing papers by Sonja Sioncke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sonja Sioncke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sonja Sioncke. The network helps show where Sonja Sioncke may publish in the future.

Co-authorship network of co-authors of Sonja Sioncke

This figure shows the co-authorship network connecting the top 25 collaborators of Sonja Sioncke. A scholar is included among the top collaborators of Sonja Sioncke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sonja Sioncke. Sonja Sioncke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si 2019 ·IEEE Transactions on Nuclear Science ·(unknown), Stefano Bonaldo, Pan Wang, Rong Jiang, Huiqi Gong, En Xia Zhang, Niamh Waldron, Bernardette Kunert, Jérôme Mitard, Nadine Collaert, Sonja Sioncke, Dimitri Linten, Ronald D. Schrimpf, Robert A. Reed, Simone Gerardin, A. Paccagnella, Daniel M. Fleetwood	19
2	Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors 2017 ·IEEE Transactions on Nuclear Science ·(unknown), Rong Jiang, En Xia Zhang, Wenjun Liao, (unknown), Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Dimitri Linten, Jérôme Mitard, Nadine Collaert, Sonja Sioncke, Niamh Waldron	13
3	Si-passivated Ge nFET towards a reliable Ge CMOS 2016 ·Hiroaki Arimura, Sonja Sioncke, Daire Cott, Jérôme Mitard, Wendy Vanherle, Roger Loo, J. Franco, Thierry Conard, Paola Favia, H. Bender, Liesbeth Witters, Hans Mertens, L.-Å. Ragnarsson, G. Pourtois, Marc Heyns, A. Mocuta, Aaron Thean, D. Mocuta, Nadine Collaert	1
4	Record mobility (μ<inf>eff</inf> ∼3100 cm²/V-s) and reliability performance (V<inf>ov</inf>∼0.5V for 10yr operation) of In<inf>0.53</inf>Ga<inf>0.47</inf>As MOS devices using improved surface preparation and a novel interfacial layer 2016 ·Abhitosh Vais, A. Alian, Laura Nyns, J. Franco, Sonja Sioncke, V. Putcha, Hao Yu, Y. Mols, R. Rooyackers, Dennis Lin, Jan Willem Maes, Qi Xie, Michael Givens, (unknown), Xiaoqiang Jiang, A. Mocuta, Nadine Collaert, K. De Meyer, Aaron Thean	7
5	Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation 2015 ·Hiroaki Arimura, Sonja Sioncke, Daire Cott, Jérôme Mitard, Thierry Conard, Wendy Vanherle, Roger Loo, Paola Favia, H. Bender, Johan Meersschaut, Liesbeth Witters, Hans Mertens, J. Franco, Lars‐Åke Ragnarsson, Geoffrey Pourtois, Marc Heyns, A. Mocuta, Nadine Collaert, Aaron Thean	27
6	Low-Frequency Noise Characterization of GeO<sub><italic>x</italic></sub> Passivated Germanium MOSFETs 2015 ·IEEE Transactions on Electron Devices ·Fang Wen, Eddy Simoen, Hiroaki Arimura, Jérôme Mitard, Sonja Sioncke, Hans Mertens, A. Mocuta, Nadine Collaert, Jun Luo, Chao Zhao, Aaron Thean, Cor Claeys	16
7	BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities 2014 ·G. Groeseneken, J. Franco, M. Cho, B. Kaczer, M. Toledano-Luque, Ph. Roussel, T. Kauerauf, A. Alian, Jérôme Mitard, Hiroaki Arimura, Dennis Lin, Niamh Waldron, Sonja Sioncke, Liesbeth Witters, Hans Mertens, Lars‐Åke Ragnarsson, Marc Heyns, Nadine Collaert, Aaron Thean, An Steegen	30
8	Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs 2012 ·Dennis Lin, A. Alian, Shubhanshu Gupta, Bin Yang, E. Bury, Sonja Sioncke, R. Degraeve, (unknown), (unknown), Paola Favia, H. Bender, Matty Caymax, Krishna C. Saraswat, Nadine Collaert, Aaron Thean	33
9	Passivation Challenges with Ge and III/V Devices 2012 ·ECS Transactions ·Sonja Sioncke, Dennis Lin, Laura Nyns, Annelies Delabie, Aaron Thean, Naoto Horiguchi, Herbert Struyf, (unknown), Matty Caymax	4
10	Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces 2011 ·The Journal of Chemical Physics ·Joon Sung Lee, (unknown), Wilhelm Melitz, Sangyeob Lee, Annelies Delabie, Sonja Sioncke, Matty Caymax, Geoffrey Pourtois, Andrew C. Kummel	12
11	(Invited) Aluminium Oxide Atomic Layer Deposition on Semiconductor Substrates 2011 ·ECS Transactions ·Annelies Delabie, Sonja Sioncke, Jens Rip, Sven Van Elshocht, Geoffrey Pourtois, (unknown), Burkhard Beckhoff, Kristine Pierloot	1
12	Self-Affine Surface Roughness of Chemically and Thermally Cleaned Ge(100) Surfaces 2011 ·Journal of The Electrochemical Society ·Claudia Fleischmann, Michel Houssa, Sonja Sioncke, Burkhard Beckhoff, Matthias Müller, Philipp Hönicke, Marc Meuris, K. Temst, A. Vantomme	5
13	H2O- and O3-Based Atomic Layer Deposition of High-K Dielectric Films on GeO2 Passivation Layers 2009 ·Journal of The Electrochemical Society ·Annelies Delabie, (unknown), Florence Bellenger, Matty Caymax, Thierry Conard, Alexis Franquet, Sonja Sioncke, Sven Van Elshocht, Marc Heyns, Marc Meuris	1
14	Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substrates 2009 ·Journal of The Electrochemical Society ·Sonja Sioncke, Annelies Delabie, Guy Brammertz, Thierry Conard, Alexis Franquet, Matty Caymax, (unknown), Marc Heyns, Marc Meuris, J. Leo van Hemmen, W. Keuning, W. M. M. Kessels	16
15	Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) 2009 ·Microelectronic Engineering ·Matty Caymax, Guy Brammertz, Annelies Delabie, Sonja Sioncke, Dennis Lin, (unknown), Geoffrey Pourtois, Wei Wang, Marc Meuris, Marc Heyns	45
16	Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation 2008 ·Journal of The Electrochemical Society ·Annelies Delabie, D.P. Brunco, Thierry Conard, Paola Favia, H. Bender, Alexis Franquet, Sonja Sioncke, Wilfried Vandervorst, Sven Van Elshocht, Marc Heyns, Marc Meuris, Eunji Kim, Paul C. McIntyre, Krishna C. Saraswat, James M. LeBeau, Joël Cagnon, Susanne Stemmer, Wilman Tsai	31
17	Particle Deposition and Removal from Ge Wafers 2007 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Sonja Sioncke, Marcel Lux, Wim Fyen, Marc Meuris, Paul Mertens, Antoon Theuwis	2
18	How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor Devices 2006 ·ECS Transactions ·David Hellin, Jens Rip, (unknown), Daniël Nelis, Sonja Sioncke, Guy Brammertz, Matty Caymax, M. Meuris, Stefan De Gendt, Chris Vinckier	4
19	A deep-level transient spectroscopy study of transition metals in n-type germanium 2006 ·Materials Science in Semiconductor Processing ·Stefaan Forment, Jan Vanhellemont, P. Clauws, Jan Van Steenbergen, Sonja Sioncke, Marc Meuris, Eddy Simoen, Antoon Theuwis	18
20	Electric-Field-Modulated Circular-Difference Effects in Second-Harmonic Generation from a Chiral Liquid Crystal 2002 ·Angewandte Chemie International Edition ·Thierry Verbiest, Sonja Sioncke, André Persoons, Ladislav Vyklický, Thomas J. Katz	92

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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