Niamh Waldron

2.3k total citations
88 papers, 1.2k citations indexed

About

Niamh Waldron is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Niamh Waldron has authored 88 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 14 papers in Biomedical Engineering. Recurrent topics in Niamh Waldron's work include Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Semiconductor Quantum Structures and Devices (27 papers). Niamh Waldron is often cited by papers focused on Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Semiconductor Quantum Structures and Devices (27 papers). Niamh Waldron collaborates with scholars based in Belgium, United States and Netherlands. Niamh Waldron's co-authors include Nadine Collaert, Clément Merckling, Jesús A. del Alamo, Bernardette Kunert, R. Langer, Dae-Hyun Kim, Aaron Thean, Yves Mols, Andreas Schulze and A. Alian and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Niamh Waldron

87 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Niamh Waldron Belgium 20 1.1k 472 299 188 156 88 1.2k
Masahiko Hata Japan 23 1.1k 1.0× 423 0.9× 265 0.9× 66 0.4× 175 1.1× 75 1.2k
E. Augendre France 20 1.3k 1.2× 446 0.9× 286 1.0× 48 0.3× 144 0.9× 110 1.4k
Wai Son Ko United States 11 582 0.5× 496 1.1× 538 1.8× 85 0.5× 219 1.4× 21 793
Nicolas Cavassilas France 16 644 0.6× 390 0.8× 267 0.9× 85 0.5× 229 1.5× 76 849
J. M. Llorens Spain 16 409 0.4× 424 0.9× 179 0.6× 66 0.4× 154 1.0× 54 608
Bernhard Loitsch Germany 14 316 0.3× 349 0.7× 415 1.4× 94 0.5× 218 1.4× 20 572
K. Sebald Germany 16 387 0.3× 511 1.1× 212 0.7× 335 1.8× 333 2.1× 65 805
Yannick Baumgartner Switzerland 12 613 0.6× 388 0.8× 193 0.6× 33 0.2× 122 0.8× 28 713
Sylvain Sergent Japan 14 390 0.4× 397 0.8× 305 1.0× 183 1.0× 90 0.6× 33 572
M. Mexis France 14 298 0.3× 513 1.1× 242 0.8× 206 1.1× 176 1.1× 19 686

Countries citing papers authored by Niamh Waldron

Since Specialization
Citations

This map shows the geographic impact of Niamh Waldron's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Niamh Waldron with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Niamh Waldron more than expected).

Fields of papers citing papers by Niamh Waldron

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Niamh Waldron. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Niamh Waldron. The network helps show where Niamh Waldron may publish in the future.

Co-authorship network of co-authors of Niamh Waldron

This figure shows the co-authorship network connecting the top 25 collaborators of Niamh Waldron. A scholar is included among the top collaborators of Niamh Waldron based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Niamh Waldron. Niamh Waldron is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, Hao, A. Alian, Uthayasankaran Peralagu, et al.. (2021). Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics. IEEE Transactions on Electron Devices. 68(11). 5559–5564. 12 indexed citations
2.
Vais, Abhitosh, Po-Chun Hsu, Hao Yu, et al.. (2021). A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. Ghent University Academic Bibliography (Ghent University). 1–5. 1 indexed citations
3.
Agopian, Paula Ghedini Der, João Antônio Martino, Eddy Simoen, et al.. (2021). Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C. Solid-State Electronics. 185. 108091–108091. 4 indexed citations
4.
Rodríguez, R., Uthayasankaran Peralagu, A. Alian, et al.. (2020). Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs. IEEE Transactions on Electron Devices. 67(11). 4592–4596. 5 indexed citations
5.
Takakura, Kenichiro, V. Putcha, Eddy Simoen, et al.. (2020). Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors. Semiconductor Science and Technology. 36(2). 24003–24003. 2 indexed citations
6.
Parvais, Bertrand, A. Alian, Uthayasankaran Peralagu, et al.. (2020). GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. 19 indexed citations
7.
Claeys, Cor, Po-Chun Hsu, Y. Mols, et al.. (2020). Electrical Activity of Extended Defects in Relaxed In x Ga 1−x As Hetero-Epitaxial Layers. ECS Journal of Solid State Science and Technology. 9(3). 33001–33001. 3 indexed citations
8.
Bonaldo, Stefano, Pan Wang, Rong Jiang, et al.. (2019). Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si. IEEE Transactions on Nuclear Science. 66(7). 1599–1605. 19 indexed citations
9.
Claeys, Cor, Po-Chun Hsu, Y. Mols, et al.. (2019). Are Extended Defects a Show Stopper for Future III-V CMOS Technologies. Journal of Physics Conference Series. 1190(1). 12001–12001. 1 indexed citations
10.
Vais, Abhitosh, Liesbeth Witters, Y. Mols, et al.. (2019). First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. VUBIR (Vrije Universiteit Brussel). 9.1.1–9.1.4. 18 indexed citations
11.
Kunert, Bernardette, et al.. (2018). How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches. Semiconductor Science and Technology. 33(9). 93002–93002. 114 indexed citations
12.
Jiang, Rong, En Xia Zhang, Wenjun Liao, et al.. (2017). Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors. IEEE Transactions on Nuclear Science. 65(1). 175–183. 13 indexed citations
13.
Horiguchi, Naoto, Alexey Milenin, Efrain Altamirano Sánchez, et al.. (2016). Patterning challenges in advanced device architectures: FinFETs to nanowires. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9782. 10. 4 indexed citations
14.
Waldron, Niamh, Clément Merckling, Lieve Teugels, et al.. (2015). Replacement fin processing for III–V on Si: From FinFets to nanowires. Solid-State Electronics. 115. 81–91. 19 indexed citations
15.
Jiang, Shidong, Clément Merckling, Alain Moussa, et al.. (2015). Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. ECS Journal of Solid State Science and Technology. 4(7). N83–N87. 3 indexed citations
16.
Groeseneken, G., J. Franco, M. Cho, et al.. (2014). BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities. 34.4.1–34.4.4. 30 indexed citations
17.
Waldron, Niamh, Gang Wang, Ngoc Duy Nguyen, et al.. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. ECS Transactions. 45(4). 115–128. 35 indexed citations
18.
Firrincieli, Andrea, Benjamin Vincent, Niamh Waldron, et al.. (2011). Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth. 1–3. 1 indexed citations
19.
Ong, Patrick, Liesbeth Witters, Niamh Waldron, & Leonardus H. A. Leunissen. (2011). Ge- and III/V-CMP for Integration of High Mobility Channel Materials. ECS Transactions. 34(1). 647–652. 13 indexed citations
20.
Hellings, Geert, Geert Eneman, Brice De Jaeger, et al.. (2009). Scalability of quantum well devices for digital logic applications. 33–34. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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