C. Mazuré

1.8k total citations
98 papers, 1.2k citations indexed

About

C. Mazuré is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Mazuré has authored 98 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 84 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Mazuré's work include Semiconductor materials and devices (63 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers) and Integrated Circuits and Semiconductor Failure Analysis (32 papers). C. Mazuré is often cited by papers focused on Semiconductor materials and devices (63 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers) and Integrated Circuits and Semiconductor Failure Analysis (32 papers). C. Mazuré collaborates with scholars based in France, Germany and United States. C. Mazuré's co-authors include M. Orłowski, C. Dehm, Christophe Maleville, Walter Hartner, F. Lau, F. Letertre, N. Nagel, I. Kasko, Thomas Mikolajick and Markus Kastner and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

C. Mazuré

91 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Mazuré France	17	1.0k	296	220	200	60	98	1.2k
D. Lafond France	19	971 0.9×	219 0.7×	161 0.7×	133 0.7×	64 1.1×	71	1.1k
Toshiyuki Mine Japan	17	917 0.9×	394 1.3×	237 1.1×	329 1.6×	39 0.7×	103	1.1k
P. Fazan United States	17	1.2k 1.2×	282 1.0×	186 0.8×	188 0.9×	123 2.0×	115	1.3k
Jenn‐Gwo Hwu Taiwan	18	1.3k 1.3×	350 1.2×	158 0.7×	288 1.4×	104 1.7×	218	1.4k
D.J. Dumin United States	23	1.5k 1.5×	466 1.6×	153 0.7×	283 1.4×	86 1.4×	75	1.6k
C. D’Emic United States	18	1.3k 1.2×	297 1.0×	198 0.9×	213 1.1×	75 1.3×	42	1.4k
G.W. Neudeck United States	20	1.4k 1.3×	408 1.4×	296 1.3×	260 1.3×	26 0.4×	140	1.5k
K.N. Bhat India	16	804 0.8×	164 0.6×	202 0.9×	323 1.6×	42 0.7×	110	915
Joseph J. Kopanski United States	18	836 0.8×	217 0.7×	355 1.6×	578 2.9×	39 0.7×	70	1.1k
Michel Depas Belgium	13	1.6k 1.5×	399 1.3×	88 0.4×	261 1.3×	128 2.1×	27	1.6k

Countries citing papers authored by C. Mazuré

Since Specialization

Citations

This map shows the geographic impact of C. Mazuré's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Mazuré with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Mazuré more than expected).

Fields of papers citing papers by C. Mazuré

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Mazuré. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Mazuré. The network helps show where C. Mazuré may publish in the future.

Co-authorship network of co-authors of C. Mazuré

This figure shows the co-authorship network connecting the top 25 collaborators of C. Mazuré. A scholar is included among the top collaborators of C. Mazuré based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Mazuré. C. Mazuré is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Celler, G. K., et al.. (2020). A Review of SOI Technology and its Applications. Journal of Integrated Circuits and Systems. 4(2). 51–54. 12 indexed citations

Radu, Ionut, et al.. (2015). 3D monolithic integration: Stacking technology and applications. 1–3. 6 indexed citations

Xu, Nuo, Byron Ho, Vinh Cao Trần, et al.. (2013). Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications. Symposium on VLSI Technology. 1 indexed citations

Daval, Nicolas, W. Schwarzenbach, Oleg Kononchuk, et al.. (2013). Smart Cut™ technology provides excellent layer uniformity for fully depleted CMOS. 1–2.

Mazuré, C. & Bich-Yen Nguyen. (2012). (Invited) Overview of Fully Depleted SOI Technology and Circuit Benefits. ECS Transactions. 49(1). 41–48. 2 indexed citations

Simoen, E., et al.. (2010). High Purity Silicon 11. Electrochemical Society eBooks. 2 indexed citations

Mazuré, C., et al.. (2010). FDSOI: From substrate to devices and circuit applications. 57. 45–51. 12 indexed citations

Nguyen, Bich-Yen, C. Mazuré, D. Delprat, et al.. (2009). Overview of FDSOI technology from substrate to device. 1–2. 4 indexed citations

Nguyen, P., K.K. Bourdelle, Nicolas Daval, et al.. (2008). Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H. Journal of Applied Physics. 104(11). 4 indexed citations

10.

Gallon, C., A. Vandooren, F. Bœuf, et al.. (2006). Ultra-Thin Fully Depleted SOI Devices with Thin BOX, Ground Plane and Strained Liner Booster. 99. 17–18. 12 indexed citations

11.

Xiong, Weize, C. Rinn Cleavelin, T. Schulz, et al.. (2006). FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate. 61. 39–40. 9 indexed citations

12.

Mazuré, C., et al.. (2006). Impact of Advanced SOI Substrates on Device Architecture and Design. 147. 1–4. 1 indexed citations

13.

Mazuré, C., et al.. (2005). Engineering wafers for the nanotechnology era. 2003. 29–38. 6 indexed citations

14.

Cayrefourcq, Ian, et al.. (2004). Development of SGOI and sSOI for High Volume Manufacturing. 1 indexed citations

15.

Hartner, Walter, G. Schindler, Markus Kastner, et al.. (2000). Integration of H₂ barriers for ferroelectric memories based on SrBi₂Ta₂O₉ (SBT). Integrated ferroelectrics. 31(1-4). 273–284. 6 indexed citations

16.

Hendrix, B. C., Jeffrey F. Roeder, Thomas H. Baum, et al.. (1998). Correlations Between Composition, Texture, and Polarization in Sr_xBi_yTa₂O_5+x+3y/2 Thin Films Deposited by MOCVD. MRS Proceedings. 541. 5 indexed citations

17.

Mazuré, C., et al.. (1988). INFLUENCE OF THE FABRICATION CONDITIONS ON THE p⁺-TaSi₂/POLY-Si GATE QUALITY. Le Journal de Physique Colloques. 49(C4). C4–405. 1 indexed citations

18.

Mazuré, C., et al.. (1987). Impact of S/D-Preamorphization on CMOS Performance. European Solid-State Device Research Conference. 585–588. 1 indexed citations

19.

Mazuré, C. & M. Orłowski. (1987). Oxidation Induced Local Channel Dopant Accumulation. European Solid-State Device Research Conference. 477–480. 2 indexed citations

20.

Dolgopolov, V. T., C. Mazuré, A. Zrenner, & F. Koch. (1984). Surface conductivity measurements by a capacitive coupling technique. Journal of Applied Physics. 55(12). 4280–4283. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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