Wolfgang Goes

2.6k total citations
98 papers, 2.0k citations indexed

About

Wolfgang Goes is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Wolfgang Goes has authored 98 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 80 papers in Electrical and Electronic Engineering, 52 papers in Atomic and Molecular Physics, and Optics and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Wolfgang Goes's work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Magnetic properties of thin films (40 papers). Wolfgang Goes is often cited by papers focused on Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Magnetic properties of thin films (40 papers). Wolfgang Goes collaborates with scholars based in Austria, Belgium and Germany. Wolfgang Goes's co-authors include Tibor Grasser, B. Kaczer, H. Reisinger, F. Schanovsky, P.-J. Wagner, Michael Nelhiebel, J. Franco, Ph. Hehenberger, Th. Aichinger and Yannick Wimmer and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Scientific Reports.

In The Last Decade

Wolfgang Goes

84 papers receiving 2.0k citations

Peers

Wolfgang Goes
B.P. Linder United States
P. Zeitzoff United States
T. Kauerauf Belgium
Barry O’Sullivan Belgium
Jaesoo Ahn United States
Michel Depas Belgium
Khaled Ahmed United States
Bich-Yen Nguyen France
G. Ghidini Italy
Yuzuru Ohji Japan
B.P. Linder United States
Wolfgang Goes
Citations per year, relative to Wolfgang Goes Wolfgang Goes (= 1×) peers B.P. Linder

Countries citing papers authored by Wolfgang Goes

Since Specialization
Citations

This map shows the geographic impact of Wolfgang Goes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wolfgang Goes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wolfgang Goes more than expected).

Fields of papers citing papers by Wolfgang Goes

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wolfgang Goes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wolfgang Goes. The network helps show where Wolfgang Goes may publish in the future.

Co-authorship network of co-authors of Wolfgang Goes

This figure shows the co-authorship network connecting the top 25 collaborators of Wolfgang Goes. A scholar is included among the top collaborators of Wolfgang Goes based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wolfgang Goes. Wolfgang Goes is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Goes, Wolfgang, et al.. (2025). Field-free magnetization switching in SOT-MRAM devices with noncollinear antiferromagnets. Microelectronic Engineering. 300. 112372–112372.
2.
Orio, Roberto Lacerda de, et al.. (2024). A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping. Solid-State Electronics. 223. 109027–109027. 1 indexed citations
3.
Orio, Roberto Lacerda de, et al.. (2024). Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling. Micromachines. 15(5). 568–568. 1 indexed citations
4.
Sklénard, B., et al.. (2024). Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian. Applied Physics Letters. 124(5). 1 indexed citations
5.
Orio, Roberto Lacerda de, et al.. (2023). A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. Micromachines. 14(8). 1581–1581. 4 indexed citations
6.
Goes, Wolfgang, et al.. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. ECS Transactions. 111(1). 181–186. 1 indexed citations
7.
Orio, Roberto Lacerda de, et al.. (2023). Finite Element Approach for the Simulation of Modern MRAM Devices. Micromachines. 14(5). 898–898. 7 indexed citations
8.
Goes, Wolfgang, et al.. (2023). Study of Self-Heating and its Effects in SOT-STT-MRAM. 337–340.
9.
Goes, Wolfgang, et al.. (2023). Numerical study of two-terminal SOT-MRAM. Physica B Condensed Matter. 673. 415362–415362.
10.
11.
Orio, Roberto Lacerda de, et al.. (2022). Spin and charge drift-diffusion in ultra-scaled MRAM cells. Scientific Reports. 12(1). 20958–20958. 15 indexed citations
12.
Grill, Alexander, Dominic Waldhoer, Wolfgang Goes, et al.. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory. IEEE Transactions on Electron Devices. 68(12). 6365–6371. 12 indexed citations
13.
Grill, Alexander, Dominic Waldhoer, Wolfgang Goes, et al.. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental. IEEE Transactions on Electron Devices. 68(12). 6372–6378. 8 indexed citations
14.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High-k SiGe Transistors–Part II: Theory. IEEE Transactions on Electron Devices. 64(5). 2099–2105. 13 indexed citations
15.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental. IEEE Transactions on Electron Devices. 64(5). 2092–2098. 20 indexed citations
16.
Rzepa, G., Michael Waltl, Wolfgang Goes, et al.. (2016). Complete extraction of defect bands responsible for instabilities in n and pFinFETs. 1–2. 30 indexed citations
17.
Rzepa, G., Wolfgang Goes, K. Rott, et al.. (2014). Physical modeling of NBTI: From individual defects to devices. 81–84. 17 indexed citations
18.
Grasser, Tibor, Wolfgang Goes, Yannick Wimmer, et al.. (2014). On the microscopic structure of hole traps in pMOSFETs. 21.1.1–21.1.4. 78 indexed citations
19.
Schanovsky, F., Wolfgang Goes, & Tibor Grasser. (2013). Advanced modeling of charge trapping at oxide defects. 451–458. 4 indexed citations
20.
Schanovsky, F., et al.. (2010). Ab-initio calculation of the vibrational influence on hole-trapping. 1–4. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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