B. Kaczer

13.7k total citations
541 papers, 10.3k citations indexed

About

B. Kaczer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Kaczer has authored 541 papers receiving a total of 10.3k indexed citations (citations by other indexed papers that have themselves been cited), including 530 papers in Electrical and Electronic Engineering, 75 papers in Materials Chemistry and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Kaczer's work include Semiconductor materials and devices (497 papers), Advancements in Semiconductor Devices and Circuit Design (414 papers) and Integrated Circuits and Semiconductor Failure Analysis (238 papers). B. Kaczer is often cited by papers focused on Semiconductor materials and devices (497 papers), Advancements in Semiconductor Devices and Circuit Design (414 papers) and Integrated Circuits and Semiconductor Failure Analysis (238 papers). B. Kaczer collaborates with scholars based in Belgium, Austria and United Kingdom. B. Kaczer's co-authors include G. Groeseneken, Tibor Grasser, R. Degraeve, J. Franco, Ph. Roussel, H. Reisinger, Wolfgang Goes, P.-J. Wagner, M. Toledano-Luque and Philippe Roussel and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Kaczer

531 papers receiving 10.0k citations

Peers

Countries citing papers authored by B. Kaczer

Since Specialization

Citations

This map shows the geographic impact of B. Kaczer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Kaczer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Kaczer more than expected).

Fields of papers citing papers by B. Kaczer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Kaczer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Kaczer. The network helps show where B. Kaczer may publish in the future.

Co-authorship network of co-authors of B. Kaczer

This figure shows the co-authorship network connecting the top 25 collaborators of B. Kaczer. A scholar is included among the top collaborators of B. Kaczer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Kaczer. B. Kaczer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage 2024 ·Micromachines ·J. Diaz-Fortuny, (unknown), E. Bury, R. Degraeve, B. Kaczer	2
2	Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology 2024 ·J. Diaz-Fortuny, (unknown), (unknown), E. Bury, R. Degraeve, B. Kaczer	2
3	A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays 2023 ·Alexander Grill, (unknown), J. Diaz-Fortuny, (unknown), E. Bury, Adrian Chasin, Tibor Grasser, Michael Waltl, B. Kaczer, Kristiaan De Greve	8
4	Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing 2023 ·IEEE Transactions on Nanotechnology ·Arnout Beckers, (unknown), Alexander Grill, B. Kaczer, M. Garcia Bardon, Bertrand Parvais, B. Govoreanu, Kristiaan De Greve, Gaspard Hiblot, Geert Hellings	9
5	Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices 2023 ·Microelectronics Reliability ·Dominic Waldhoer, Christian Schleich, (unknown), Alexander Grill, (unknown), Alexander Karl, Theresia Knobloch, G. Rzepa, J. Franco, B. Kaczer, Michael Waltl, Tibor Grasser	18
6	Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology 2023 ·IEEE Transactions on Device and Materials Reliability ·(unknown), J. Diaz-Fortuny, E. Bury, J. Franco, B. Kaczer, Georges Gielen	5
7	A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices 2023 ·IEEE Transactions on Electron Devices ·Fabrizio Buscemi, Enrico Piccinini, Luca Vandelli, F. Nardi, Andrea Padovani, B. Kaczer, Daniele Garbin, Sergiu Clima, R. Degraeve, Gouri Sankar Kar, Francesco Tavanti, Amine Slassi, Arrigo Calzolari, Luca Larcher	7
8	A Pragmatic Model to Predict Future Device Aging 2023 ·IEEE Access ·James Brown, (unknown), Rui Gao, Zhigang Ji, Weidong Zhang, John Marsland, T. Chiarella, J. Franco, B. Kaczer, Dimitri Linten, J. F. Zhang	1
9	Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors 2023 ·Advanced Electronic Materials ·Amine Slassi, (unknown), Andrea Padovani, Francesco Tavanti, Xu He, Sergiu Clima, Daniele Garbin, B. Kaczer, Luca Larcher, Pablo Ordejón, Arrigo Calzolari	13
10	Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons 2022 ·IEEE Transactions on Electron Devices ·Christian Schleich, (unknown), Al-Moatasem El-Sayed, (unknown), B. Kaczer, Tibor Grasser, Michael Waltl	13
11	Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory 2021 ·IEEE Transactions on Electron Devices ·(unknown), Alexander Grill, Dominic Waldhoer, Wolfgang Goes, B. Kaczer, Dimitri Linten, Bertrand Parvais, B. Govoreanu, Iuliana Radu, Michael Waltl, Tibor Grasser	12
12	Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental 2021 ·IEEE Transactions on Electron Devices ·(unknown), Alexander Grill, Dominic Waldhoer, Wolfgang Goes, B. Kaczer, Dimitri Linten, Bertrand Parvais, B. Govoreanu, Iuliana Radu, Tibor Grasser, Michael Waltl	8
13	Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO 2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic 2021 ·Symposium on VLSI Technology ·J. Franco, Jean‐François de Marneffe, A. Vandooren, Hiroaki Arimura, Lars‐Åke Ragnarsson, (unknown), E. Dentoni Litta, Naoto Horiguchi, Kristof Croes, D. Linten, Tibor Grasser, B. Kaczer	3
14	Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays 2020 ·IEEE Transactions on Device and Materials Reliability ·Bernhard Stampfer, Marko Simicic, Pieter Weckx, (unknown), B. Kaczer, Tibor Grasser, Michael Waltl	2
15	Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-<inline-formula> <tex-math notation="LaTeX">${V}_{dd}$ </tex-math> </inline-formula> 2019 ·IEEE Transactions on Electron Devices ·(unknown), Rui Gao, J. F. Zhang, Zhigang Ji, (unknown), Wei Dong Zhang, (unknown), Asen Asenov, B. Kaczer	9
16	A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, and <inline-formula> <tex-math notation="LaTeX">${G}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula> Measurements 2019 ·IEEE Transactions on Electron Devices ·Andrea Padovani, B. Kaczer, Milan Pešić, Attilio Belmonte, M. Popovici, Laura Nyns, Dimitri Linten, Valeri Afanas’ev, (unknown), (unknown), (unknown), Luca Larcher	34
17	A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS 2019 ·IEEE Journal of Solid-State Circuits ·(unknown), E. Bury, R. Degraeve, B. Kaczer, Dimitri Linten, Ingrid Verbauwhede	57
18	Superior NBTI in High-k SiGe Transistors–Part II: Theory 2017 ·IEEE Transactions on Electron Devices ·Michael Waltl, G. Rzepa, Alexander Grill, Wolfgang Goes, J. Franco, B. Kaczer, Liesbeth Witters, Jérôme Mitard, Naoto Horiguchi, Tibor Grasser	13
19	A unified perspective of RTN and BTI 2014 ·Tibor Grasser, K. Rott, H. Reisinger, Michael Waltl, J. Franco, B. Kaczer	75
20	Reliability of Ultra-thin Oxides for the Giga-bit generations 1999 ·European Solid-State Device Research Conference ·G. Groeseneken, R. Degraeve, T. Nigam, B. Kaczer, H.E. Maes	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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