Jérôme Mitard

5.5k total citations · 1 hit paper
234 papers, 3.1k citations indexed

About

Jérôme Mitard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Jérôme Mitard has authored 234 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 233 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 32 papers in Biomedical Engineering. Recurrent topics in Jérôme Mitard's work include Semiconductor materials and devices (216 papers), Advancements in Semiconductor Devices and Circuit Design (210 papers) and Integrated Circuits and Semiconductor Failure Analysis (72 papers). Jérôme Mitard is often cited by papers focused on Semiconductor materials and devices (216 papers), Advancements in Semiconductor Devices and Circuit Design (210 papers) and Integrated Circuits and Semiconductor Failure Analysis (72 papers). Jérôme Mitard collaborates with scholars based in Belgium, United States and France. Jérôme Mitard's co-authors include Geert Eneman, Liesbeth Witters, G. Ghibaudo, B. Kaczer, J. Franco, G. Groeseneken, S. Bruyère, M. Denais, F. Monsieur and C. Parthasarathy and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Jérôme Mitard

218 papers receiving 3.0k citations

Hit Papers

Review on high-k dielectrics reliability issues 2005 2026 2012 2019 2005 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Review on high-k dielectrics reliability issues
    2005 416 citations Jérôme Mitard et al. IEEE Transactions on Device and Materials Reliability profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jérôme Mitard Belgium 28 3.1k 461 370 350 57 234 3.1k
S. Deleonibus France 28 2.8k 0.9× 547 1.2× 430 1.2× 384 1.1× 33 0.6× 217 2.9k
L. Clavelier France 23 1.5k 0.5× 432 0.9× 348 0.9× 291 0.8× 102 1.8× 104 1.6k
K. Rim United States 16 1.5k 0.5× 382 0.8× 281 0.8× 367 1.0× 47 0.8× 41 1.7k
Digh Hisamoto Japan 20 3.0k 1.0× 575 1.2× 297 0.8× 366 1.0× 59 1.0× 85 3.1k
S. Biesemans Belgium 28 2.4k 0.8× 326 0.7× 736 2.0× 278 0.8× 69 1.2× 171 2.5k
Geert Eneman Belgium 31 3.1k 1.0× 810 1.8× 509 1.4× 283 0.8× 44 0.8× 225 3.2k
Meishoku Masahara Japan 25 2.4k 0.8× 371 0.8× 200 0.5× 204 0.6× 53 0.9× 232 2.5k
Tsu-Jae King United States 23 2.5k 0.8× 449 1.0× 359 1.0× 335 1.0× 64 1.1× 48 2.6k
Geert Hellings Belgium 22 1.8k 0.6× 394 0.9× 272 0.7× 242 0.7× 60 1.1× 204 2.0k
Philippe Matagne Belgium 18 937 0.3× 334 0.7× 350 0.9× 417 1.2× 50 0.9× 73 1.3k

Countries citing papers authored by Jérôme Mitard

Since Specialization
Citations

This map shows the geographic impact of Jérôme Mitard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jérôme Mitard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jérôme Mitard more than expected).

Fields of papers citing papers by Jérôme Mitard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jérôme Mitard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jérôme Mitard. The network helps show where Jérôme Mitard may publish in the future.

Co-authorship network of co-authors of Jérôme Mitard

This figure shows the co-authorship network connecting the top 25 collaborators of Jérôme Mitard. A scholar is included among the top collaborators of Jérôme Mitard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jérôme Mitard. Jérôme Mitard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eyben, Pierre, A. De Keersgieter, Hans Mertens, et al.. (2024). Direct Extraction of Contact and S/D epi Access Resistance Components on 45nm Gate Pitch NS-Based n-FET Devices for the 2nm Node. Lirias (KU Leuven). 1–4.
2.
Eyben, Pierre, A. De Keersgieter, Philippe Matagne, et al.. (2024). Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs. Japanese Journal of Applied Physics. 63(4). 04SP03–04SP03. 1 indexed citations
3.
Davis, Jesse, et al.. (2024). Machine Learning-Based Universal Threshold Voltage Extraction of Transistors Using Convolutional Neural Networks. IEEE Transactions on Semiconductor Manufacturing. 37(4). 615–619. 1 indexed citations
4.
Kim, Min Jung, et al.. (2023). Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm. Advanced Intelligent Systems. 5(1). 2 indexed citations
5.
Eyben, Pierre, Goutham Arutchelvan, T. Chiarella, et al.. (2022). Investigation of access resistance components in Si-channel p-FinFET using cascaded devices.. 1 indexed citations
6.
Li, K., Andrew O’Hara, Dimitri Linten, et al.. (2021). 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs. IEEE Transactions on Electron Devices. 68(5). 2556–2563. 12 indexed citations
7.
Arimura, Hiroaki, Kurt Wostyn, Lars‐Åke Ragnarsson, et al.. (2020). (Invited) Si-Cap-Free Low-DIT SiGe Gate Stack for High-Performance pFETs. ECS Transactions. 98(5). 377–386.
8.
Vincent, Benjamin, M. Kamon, T. Schram, et al.. (2020). Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle. IEEE Transactions on Electron Devices. 67(12). 5374–5380. 11 indexed citations
9.
Smets, Quentin, Michiel J. van Setten, Jérôme Mitard, et al.. (2020). 300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility. 3 indexed citations
10.
Bonaldo, Stefano, Pan Wang, Rong Jiang, et al.. (2019). Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si. IEEE Transactions on Nuclear Science. 66(7). 1599–1605. 19 indexed citations
11.
Hiblot, Gaspard, Hiroaki Arimura, Liesbeth Witters, et al.. (2019). Observation of Plasma-Induced Damage in Bulk Germanium ${p}$ -Type FinFET Devices and Curing in High-Pressure Anneal. IEEE Transactions on Device and Materials Reliability. 19(2). 468–470. 6 indexed citations
12.
Arimura, Hiroaki, Harold Dekkers, Lars‐Åke Ragnarsson, et al.. (2019). Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation. IEEE Transactions on Electron Devices. 66(12). 5387–5392. 4 indexed citations
13.
Sternberg, Andrew L., John A. Kozub, Huiqi Gong, et al.. (2019). Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs. IEEE Transactions on Nuclear Science. 67(1). 38–43. 8 indexed citations
14.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High-k SiGe Transistors–Part II: Theory. IEEE Transactions on Electron Devices. 64(5). 2099–2105. 13 indexed citations
15.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental. IEEE Transactions on Electron Devices. 64(5). 2092–2098. 20 indexed citations
16.
Jiang, Rong, En Xia Zhang, Wenjun Liao, et al.. (2017). Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors. IEEE Transactions on Nuclear Science. 65(1). 175–183. 13 indexed citations
17.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2016). Si-passivated Ge nFET towards a reliable Ge CMOS. 1 indexed citations
18.
Hellings, Geert, Dimitri Linten, S. Thijs, et al.. (2012). ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling. Electrical Overstress/Electrostatic Discharge Symposium. 1–6. 5 indexed citations
19.
Hellings, Geert, Geert Eneman, Brice De Jaeger, et al.. (2009). Scalability of quantum well devices for digital logic applications. 33–34. 2 indexed citations
20.
Mitard, Jérôme, Michel Houssa, Geert Eneman, et al.. (2006). Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. Symposium on VLSI Technology. 82–83. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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