Jérôme Mitard

5.5k citations

234 papers · 3.1k indexed · 1 hit paper · h-index 28

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 216
- Advancements in Semiconductor Devices and Circuit Design 210
- Integrated Circuits and Semiconductor Failure Analysis 72
- Ferroelectric and Negative Capacitance Devices 29
- Thin-Film Transistor Technologies 22
- Silicon and Solar Cell Technologies 10
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 24
Biomedical Engineering top 10%
- Nanowire Synthesis and Applications 30
Materials Chemistry
Structural Biology

Co-authors: Geert Eneman Liesbeth Witters G. Ghibaudo B. Kaczer J. Franco G. Groeseneken G. Ribes M. Denais
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Biomedical Engineering
Journals: IEEE Transactions on Electron Devices (25 papers)IEEE Transactions on Nuclear Science (17 papers)IEEE Transactions on Device and Materials Reliability (7 papers)
Partner nations: Belgium United States France

In The Last Decade

Jérôme Mitard

218 papers receiving 3.0k citations

Hit Papers

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Peers

Countries citing papers authored by Jérôme Mitard

Since Specialization

Citations

This map shows the geographic impact of Jérôme Mitard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jérôme Mitard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jérôme Mitard more than expected).

Fields of papers citing papers by Jérôme Mitard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jérôme Mitard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jérôme Mitard. The network helps show where Jérôme Mitard may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jérôme Mitard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jérôme Mitard Line = papers co-authored together Jérôme Mitard links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs Japanese Journal of Applied Physics ·Pierre Eyben,A. De Keersgieter,Philippe Matagne,T. Chiarella,Clément Porret,Andriy Hikavyy,Yong Kong Siew,Ludovic Goux,Jérôme Mitard,Naoto Horiguchi	2024	1
2	Machine Learning-Based Universal Threshold Voltage Extraction of Transistors Using Convolutional Neural Networks IEEE Transactions on Semiconductor Manufacturing ·Farah Izyan Raman,Jesse Davis,Michel Houssa,Akio Kyoraiseki,Jérôme Mitard	2024	1
3	Direct Extraction of Contact and S/D epi Access Resistance Components on 45nm Gate Pitch NS-Based n-FET Devices for the 2nm Node Lirias (KU Leuven) ·Pierre Eyben,Donnall E. Thomas,A. De Keersgieter,余明,Hans Mertens,冯泽铭,Clément Porret,Erik Rosseel,ROBERTA COSTA CAMINHA,Motaharesadat Hosseini,钱吾州,金子祐一郎,Prachand Man Pradhan,Jérôme Mitard,Naoto Horiguchi	2024	0
4	Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm Advanced Intelligent Systems ·R Strauss,Tositaka TAKESADA,Min Jung Kim,Ratna Faeruz,Thomas Berry,Ruby Alicia Criollo Martinez,А. А. Каунова,Donghyun Kim,Jérôme Mitard,Cheol E. Han,Giacomo Artoni	2023	2
5	Investigation of access resistance components in Si-channel p-FinFET using cascaded devices. Pierre Eyben,Goutham Arutchelvan,T. Chiarella,Hiroaki Arimura,R. Ritzenthaler,Jérôme Mitard,E. Dentoni Litta,Naoto Horiguchi,Ludovic Goux	2022	1
6	3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs IEEE Transactions on Electron Devices ·L Enkema,Dewi Ulfatun Azizah,K. Li,Christine Petschow,X. Y. Wang,R Sudha,Andrew O’Hara,Dimitri Linten,Jérôme Mitard,Nathalie Fauchère,En Xia Zhang,Michael L. Alles,Robert A. Weller,Daniel M. Fleetwood,Robert A. Reed,Massimo V. Fischetti,Sokrates T. Pantelides,Stephanie L. Weeden-Wright,Ronald D. Schrimpf	2021	12
7	(Invited) Si-Cap-Free Low-D_IT SiGe Gate Stack for High-Performance pFETs ECS Transactions ·Hiroaki Arimura,Kurt Wostyn,Lars‐Åke Ragnarsson,Thierry Conard,Adrian Chasin,J. Franco,Jérôme Mitard,Naoto Horiguchi	2020	0
8	Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle IEEE Transactions on Electron Devices ·Benjamin Vincent,Stamov Stamen,M. Kamon,Eyerman Joe,T. Schram,T. Chiarella,S. Demuynck,S. Baudot,Yong Kong Siew,S. Kubicek,E. Dentoni Litta,Brenda Saunders,Jérôme Mitard	2020	11
9	300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility Alfred Ngombo,Quentin Smets,Michiel J. van Setten,Jérôme Mitard,Beatriz Laín-Olia,Harold Dekkers,Lieve Teugels,Ming Mao,Harinarayanan Puliyalil,J Carretero,Romain Delhougne,Gouri Sankar Kar,Zsolt Tökei	2020	3
10	Observation of Plasma-Induced Damage in Bulk Germanium ${p}$ -Type FinFET Devices and Curing in High-Pressure Anneal IEEE Transactions on Device and Materials Reliability ·Gaspard Hiblot,Hiroaki Arimura,Liesbeth Witters,綾子金子,方振平,Jérôme Mitard,Naoto Horiguchi,Nadine Collaert,Geert Van der Plas	2019	6
11	Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si IEEE Transactions on Nuclear Science ·Л. Р. Чупахина,Stefano Bonaldo,Pan Wang,Rong Jiang,Huiqi Gong,En Xia Zhang,Niamh Waldron,Bernardette Kunert,Jérôme Mitard,Nadine Collaert,Sonja Sioncke,Dimitri Linten,Ronald D. Schrimpf,Robert A. Reed,Simone Gerardin,A. Paccagnella,Daniel M. Fleetwood	2019	19
12	Record Gm_SAT/SS_SAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation IEEE Transactions on Electron Devices ·Hiroaki Arimura,Harold Dekkers,Lars‐Åke Ragnarsson,Jérôme Mitard,V. De Heyn,D. Mocuta,Nadine Collaert,Naoto Horiguchi,Daire Cott,G. Boccardi,Roger Loo,Kurt Wostyn,Liesbeth Witters,Thierry Conard,Samuel Suhard,Dennis H. van Dorp	2019	4
13	Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs IEEE Transactions on Nuclear Science ·Ava Hajian,Natsuki SHIRAI,Andrew L. Sternberg,John A. Kozub,Huiqi Gong,En Xia Zhang,杨夏鸣,Jérôme Mitard,Robert A. Weller,Ronald D. Schrimpf,Sharon M. Weiss,Robert A. Reed	2019	8
14	Superior NBTI in High-k SiGe Transistors–Part II: Theory IEEE Transactions on Electron Devices ·Michael Waltl,G. Rzepa,Alexander Grill,Wolfgang Goes,J. Franco,B. Kaczer,Liesbeth Witters,Jérôme Mitard,Naoto Horiguchi,Tibor Grasser	2017	13
15	Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors IEEE Transactions on Nuclear Science ·Л. Р. Чупахина,Rong Jiang,En Xia Zhang,Wenjun Liao,A Santi,Daniel M. Fleetwood,Ronald D. Schrimpf,Robert A. Reed,Dimitri Linten,Jérôme Mitard,Nadine Collaert,Sonja Sioncke,Niamh Waldron	2017	13
16	Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental IEEE Transactions on Electron Devices ·Michael Waltl,G. Rzepa,Alexander Grill,Wolfgang Goes,J. Franco,B. Kaczer,Liesbeth Witters,Jérôme Mitard,Naoto Horiguchi,Tibor Grasser	2017	20
17	Si-passivated Ge nFET towards a reliable Ge CMOS Hiroaki Arimura,Sonja Sioncke,Daire Cott,Jérôme Mitard,Wendy Vanherle,Roger Loo,J. Franco,Thierry Conard,Paola Favia,H. Bender,Liesbeth Witters,Hans Mertens,L.-Å. Ragnarsson,G. Pourtois,Marc Heyns,A. Mocuta,Aaron Thean,D. Mocuta,Nadine Collaert	2016	1
18	ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling Electrical Overstress/Electrostatic Discharge Symposium ·Geert Hellings,Dimitri Linten,S. Thijs,Shih‐Hung Chen,Liesbeth Witters,Jérôme Mitard,Odysseas Zografos,G. Groeseneken	2012	5
19	Scalability of quantum well devices for digital logic applications Geert Hellings,Geert Eneman,Brice De Jaeger,Jérôme Mitard,Niamh Waldron,K. De Meyer,Marc Meuris,Marc Heyns	2009	2
20	Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI Symposium on VLSI Technology ·Jérôme Mitard,Лутошина Вероника Ивановна,Valéria Maciel Cordeiro de Oliveira,Michael Bisciglia,Jake Milliones,Michel Houssa,Geert Eneman,Geert Hellings,A.M. Naimi,Jason Lin,Frederik Leys,Roger Loo,Gillis Winderickx,Evi Vrancken,A. Stesmans,Sarah Soakai,Matty Caymax,L. Pantisano,Marc Meuris,Marc Heyns	2006	35

About Jérôme Mitard

Jérôme Mitard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 234 papers that have together received 3.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (216 papers), Advancements in Semiconductor Devices and Circuit Design (210 papers), Integrated Circuits and Semiconductor Failure Analysis (72 papers), Nanowire Synthesis and Applications (30 papers), Ferroelectric and Negative Capacitance Devices (29 papers), Semiconductor materials and interfaces (24 papers), Thin-Film Transistor Technologies (22 papers) and Silicon and Solar Cell Technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.1k citations), Atomic and Molecular Physics, and Optics (370 citations) and Biomedical Engineering (461 citations). Jérôme Mitard has collaborated with scholars based in Belgium, United States and France. Frequent co-authors include Geert Eneman, Liesbeth Witters, G. Ghibaudo, B. Kaczer, J. Franco, G. Groeseneken, G. Ribes, M. Denais, F. Monsieur and Emmanuel Vincent. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, IEEE Transactions on Device and Materials Reliability, Solid-State Electronics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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