Eddy Simoen

13.2k total citations
971 papers, 9.6k citations indexed

About

Eddy Simoen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Eddy Simoen has authored 971 papers receiving a total of 9.6k indexed citations (citations by other indexed papers that have themselves been cited), including 939 papers in Electrical and Electronic Engineering, 191 papers in Atomic and Molecular Physics, and Optics and 71 papers in Biomedical Engineering. Recurrent topics in Eddy Simoen's work include Semiconductor materials and devices (754 papers), Advancements in Semiconductor Devices and Circuit Design (665 papers) and Integrated Circuits and Semiconductor Failure Analysis (341 papers). Eddy Simoen is often cited by papers focused on Semiconductor materials and devices (754 papers), Advancements in Semiconductor Devices and Circuit Design (665 papers) and Integrated Circuits and Semiconductor Failure Analysis (341 papers). Eddy Simoen collaborates with scholars based in Belgium, Brazil and Japan. Eddy Simoen's co-authors include Cor Claeys, C. Claeys, Jan Vanhellemont, B. Dierickx, João Antônio Martino, Nadine Collaert, A. Mercha, P. Clauws, Brice De Jaeger and G. Groeseneken and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Eddy Simoen

913 papers receiving 9.2k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Eddy Simoen 9.1k 2.2k 1.1k 1.1k 368 971 9.6k
J.D. Plummer 9.1k 1.0× 3.0k 1.4× 2.0k 1.8× 1.5k 1.4× 253 0.7× 298 10.0k
H.E. Maes 7.8k 0.9× 1.1k 0.5× 1.6k 1.4× 969 0.9× 216 0.6× 292 8.5k
D.A. Antoniadis 11.6k 1.3× 3.0k 1.4× 2.7k 2.4× 2.4k 2.2× 693 1.9× 427 13.1k
B. G. Streetman 4.9k 0.5× 3.8k 1.8× 1.3k 1.2× 484 0.4× 436 1.2× 269 6.0k
Steven C. Moss 2.1k 0.2× 1.1k 0.5× 1.9k 1.6× 560 0.5× 410 1.1× 176 3.8k
A. Hartstein 3.0k 0.3× 2.0k 0.9× 1.4k 1.2× 1.0k 1.0× 219 0.6× 72 4.5k
Yuan Taur 9.5k 1.0× 1.1k 0.5× 1.1k 1.0× 1.5k 1.4× 221 0.6× 169 10.0k
C. T. Sah 6.5k 0.7× 3.1k 1.4× 1.2k 1.0× 394 0.4× 168 0.5× 184 7.1k
Cor Claeys 5.2k 0.6× 807 0.4× 500 0.4× 648 0.6× 116 0.3× 624 5.5k
Chih‐Tang Sah 4.4k 0.5× 1.5k 0.7× 869 0.8× 276 0.3× 170 0.5× 118 4.7k

Countries citing papers authored by Eddy Simoen

Since Specialization
Citations

This map shows the geographic impact of Eddy Simoen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Eddy Simoen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Eddy Simoen more than expected).

Fields of papers citing papers by Eddy Simoen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Eddy Simoen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Eddy Simoen. The network helps show where Eddy Simoen may publish in the future.

Co-authorship network of co-authors of Eddy Simoen

This figure shows the co-authorship network connecting the top 25 collaborators of Eddy Simoen. A scholar is included among the top collaborators of Eddy Simoen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Eddy Simoen. Eddy Simoen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Martino, João Antônio, et al.. (2024). Effect of multiple conductions on basic parameters in linear and saturation regions for a MIS-HEMT from 450 K down to 200 K. Journal of Integrated Circuits and Systems. 19(2). 1–5.
2.
Cretu, B., et al.. (2023). (Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures. ECS Transactions. 111(1). 197–208. 1 indexed citations
3.
Martino, João Antônio, et al.. (2023). Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid-State Electronics. 208. 108742–108742.
4.
Martino, João Antônio, et al.. (2023). MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology. 38(11). 115004–115004. 1 indexed citations
5.
Yang, Weitao, Weiming Qiu, Epimitheas Georgitzikis, et al.. (2021). Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation. ACS Applied Materials & Interfaces. 13(14). 16766–16774. 78 indexed citations
6.
Martino, João Antônio, et al.. (2021). Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures. IEEE Transactions on Electron Devices. 68(7). 3630–3635. 23 indexed citations
7.
Martino, João Antônio, et al.. (2021). Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 °C. Semiconductor Science and Technology. 36(9). 95019–95019. 1 indexed citations
8.
Ji, Zhigang, Hong Yang, Hao Xu, et al.. (2020). An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method. IEEE Transactions on Device and Materials Reliability. 20(1). 92–96. 3 indexed citations
9.
Liu, Qianqian, Hong Yang, Zhigang Ji, et al.. (2020). Insights Into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs. IEEE Transactions on Device and Materials Reliability. 20(3). 498–505. 3 indexed citations
10.
Arimura, Hiroaki, G. Boccardi, Nadine Collaert, et al.. (2020). Low-Frequency Noise Characterization of Germanium n-Channel FinFETs. IEEE Transactions on Electron Devices. 67(7). 2872–2877. 10 indexed citations
11.
Wang, Hongyue, Po-Chun Hsu, Ming Zhao, et al.. (2020). Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration. IEEE Transactions on Electron Devices. 67(11). 4827–4833. 10 indexed citations
12.
Simoen, Eddy, et al.. (2020). Impact of Dummy Gate Removal and a Silicon Cap on the Low-Frequency Noise Performance of Germanium nFinFETs. IEEE Transactions on Electron Devices. 67(11). 4713–4719. 8 indexed citations
13.
Simoen, Eddy, et al.. (2019). Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In 0.53 Ga 0.47 As lattice matched to InP substrates. Semiconductor Science and Technology. 34(7). 75024–75024. 2 indexed citations
14.
Hsu, Po-Chun, Eddy Simoen, Clément Merckling, et al.. (2019). The impact of extended defects on the generation and recombination lifetime in n type In .53 Ga .47 As. Journal of Physics D Applied Physics. 52(48). 485102–485102. 2 indexed citations
15.
Agopian, Paula Ghedini Der, João Antônio Martino, R. Rooyackers, et al.. (2019). Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view. Semiconductor Science and Technology. 34(6). 65003–65003. 3 indexed citations
16.
Simoen, Eddy, Roger Loo, Yosuke Shimura, et al.. (2018). Electrical properties of extended defects in strain relaxed GeSn. Applied Physics Letters. 113(2). 22 indexed citations
17.
Chai, Zheng, Wei Dong Zhang, J. F. Zhang, et al.. (2018). Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution. IEEE Transactions on Electron Devices. 65(3). 970–977. 9 indexed citations
18.
Gaubas, E., et al.. (2018). Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si. Semiconductor Science and Technology. 33(7). 75015–75015. 5 indexed citations
19.
Gaubas, E., T. Malinauskas, S. Miasojedovas, et al.. (2017). Study of recombination characteristics in MOCVD grown GaN epi-layers on Si. Semiconductor Science and Technology. 32(12). 125014–125014. 6 indexed citations
20.
Claeys, Cor, Geert Eneman, Gang Wang, et al.. (2009). Defect Aspects of Ge-on-Si Materials and Devices. ECS Transactions. 22(1). 99–109. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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