M. Jurczak
About
In The Last Decade
M. Jurczak
420 papers receiving 9.6k citations
Peers
Comparison fields: 5 of 65
- Electrical and Electronic Engineering 9.6k
- Materials Chemistry 1.9k
- Cellular and Molecular Neuroscience 1.3k
- Polymers and Plastics 1.3k
- Biomedical Engineering 626
Countries citing papers authored by M. Jurczak
This map shows the geographic impact of M. Jurczak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Jurczak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Jurczak more than expected).
Fields of papers citing papers by M. Jurczak
This network shows the impact of papers produced by M. Jurczak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Jurczak. The network helps show where M. Jurczak may publish in the future.
Co-authorship network of co-authors of M. Jurczak
This figure shows the co-authorship network connecting the top 25 collaborators of M. Jurczak. A scholar is included among the top collaborators of M. Jurczak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Jurczak. M. Jurczak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 9 | |
| 2 | 13 | |
| 3 | 130 | |
| 4 | 12 | |
| 5 | 29 | |
| 6 | On the Bipolar Resistive Switching Memory Using $ \hbox{TiN/Hf/HfO}_{2}/\hbox{Si}$ MIS Structure | 1 |
| 7 | RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfO x and AlO x RRAM | 30 |
| 8 | Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study | 11 |
| 9 | 28 | |
| 10 | Reliability and retention of floating body RAM on bulk FinFET | 2 |
| 11 | Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells | 4 |
| 12 | Deterministic and stochastic component in RESET transient of HfSiO/FUSI gate RRAM stack | 1 |
| 13 | Investigation on the temperature dependence of the dielectric constant of high-k materials for non-volatile memory applications | 1 |
| 14 | TCAD modeling and characterization of short-range variations in multiple-gate devices and circuit blocks | 5 |
| 15 | Substrate-related output conductance frequency response of FD SOI MOSFETs: influence of channel length and substrate temperature | 2 |
| 16 | Mobility characterization in FinFETs using split C-V technique | 7 |
| 17 | Suitability of Elevated Source/Drain for Deep Submicron CMOS | 5 |
| 18 | Study on Enhanced Performance in NMOSFETs on Strained Silicon | 8 |
| 19 | 32 | |
| 20 | Investigation on the Suitability of Vertical MOSFET's for High Speed (RF) CMOS Applications | 9 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.