Daire Cott

1.6k total citations
75 papers, 1.1k citations indexed

About

Daire Cott is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Daire Cott has authored 75 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 47 papers in Materials Chemistry and 15 papers in Biomedical Engineering. Recurrent topics in Daire Cott's work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Graphene research and applications (19 papers). Daire Cott is often cited by papers focused on Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Graphene research and applications (19 papers). Daire Cott collaborates with scholars based in Belgium, Japan and United States. Daire Cott's co-authors include Philippe M. Vereecken, Marc Heyns, Stefan De Gendt, Nicolò Chiodarelli, Sara Bals, G. Groeseneken, Christophe Detavernier, Shaoren Deng, Olivier Richard and Iuliana Radu and has published in prestigious journals such as Journal of the American Chemical Society, ACS Nano and Journal of Applied Physics.

In The Last Decade

Daire Cott

74 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daire Cott Belgium 20 661 646 228 167 153 75 1.1k
Zheng Fan United States 17 575 0.9× 883 1.4× 139 0.6× 157 0.9× 74 0.5× 49 1.3k
Lok Wing Wong Hong Kong 21 813 1.2× 583 0.9× 182 0.8× 152 0.9× 92 0.6× 43 1.2k
Yagang Yao China 16 938 1.4× 480 0.7× 380 1.7× 168 1.0× 169 1.1× 24 1.2k
Leslie A. Adamczyk United States 7 441 0.7× 678 1.0× 120 0.5× 214 1.3× 282 1.8× 10 1.1k
Lionel Santinacci France 26 695 1.1× 821 1.3× 359 1.6× 148 0.9× 257 1.7× 79 1.3k
Rupak Banerjee India 20 630 1.0× 790 1.2× 300 1.3× 139 0.8× 133 0.9× 70 1.2k
Hyeon Kook Seo South Korea 15 403 0.6× 672 1.0× 90 0.4× 160 1.0× 51 0.3× 23 988
Andrew C. Meng United States 18 421 0.6× 555 0.9× 237 1.0× 54 0.3× 121 0.8× 62 930
Christoph Wirth United Kingdom 9 835 1.3× 339 0.5× 320 1.4× 89 0.5× 123 0.8× 9 1.1k
Er‐Xiong Ding Finland 19 613 0.9× 296 0.5× 328 1.4× 108 0.6× 54 0.4× 41 842

Countries citing papers authored by Daire Cott

Since Specialization
Citations

This map shows the geographic impact of Daire Cott's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daire Cott with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daire Cott more than expected).

Fields of papers citing papers by Daire Cott

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daire Cott. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daire Cott. The network helps show where Daire Cott may publish in the future.

Co-authorship network of co-authors of Daire Cott

This figure shows the co-authorship network connecting the top 25 collaborators of Daire Cott. A scholar is included among the top collaborators of Daire Cott based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daire Cott. Daire Cott is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lan, Hao-Yu, et al.. (2025). Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2. npj 2D Materials and Applications. 9(1). 6 indexed citations
2.
Cott, Daire, Benjamin Groven, Stefanie Sergeant, et al.. (2024). Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(6).
3.
Wu, Xiangyu, Daire Cott, Yuanyuan Shi, et al.. (2024). Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides. ACS Applied Electronic Materials. 6(6). 4213–4222. 4 indexed citations
4.
Brems, Steven, Didit Yudistira, Daire Cott, et al.. (2023). Wafer‐Scale Integration of Single Layer Graphene Electro‐Absorption Modulators in a 300 mm CMOS Pilot Line. Laser & Photonics Review. 17(6). 14 indexed citations
5.
6.
Kaczer, B., Quentin Smets, Devin Verreck, et al.. (2023). Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. Lirias (KU Leuven). 1–6. 2 indexed citations
7.
Smets, Quentin, Devin Verreck, T. Schram, et al.. (2022). Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. 1–2. 4 indexed citations
8.
Lin, Dennis, Xiangyu Wu, Daire Cott, et al.. (2021). Scaling synthetic WS2 dual-gate MOS devices towards sub-nm CET. Symposium on VLSI Technology. 1–2. 2 indexed citations
9.
Schram, T., Quentin Smets, D. Radisic, et al.. (2021). High yield and process uniformity for 300 mm integrated WS 2 FETs. Symposium on VLSI Technology. 1–2. 9 indexed citations
10.
Smets, Quentin, Goutham Arutchelvan, T. Schram, et al.. (2021). Extreme scaling enabled by MX2 transistors: variability challenges (invited). 1–2. 2 indexed citations
11.
Arimura, Hiroaki, Harold Dekkers, Lars‐Åke Ragnarsson, et al.. (2019). Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation. IEEE Transactions on Electron Devices. 66(12). 5387–5392. 4 indexed citations
12.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2016). Si-passivated Ge nFET towards a reliable Ge CMOS. 1 indexed citations
13.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2015). Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation. 21.6.1–21.6.4. 27 indexed citations
14.
Deng, Shaoren, Mert Kurttepeli, Daire Cott, et al.. (2014). Synthesis of a 3D network of Pt nanowires by atomic layer deposition on a carbonaceous template. Nanoscale. 6(12). 6939–6939. 14 indexed citations
15.
Liyanage, Luckshitha Suriyasena, Daire Cott, Annelies Delabie, et al.. (2013). Atomic layer deposition of high-kdielectrics on single-walled carbon nanotubes: a Raman study. Nanotechnology. 24(24). 245703–245703. 22 indexed citations
16.
Chiodarelli, Nicolò, Yusaku Kashiwagi, Yunlong Li, et al.. (2011). Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects. Nanotechnology. 22(8). 85302–85302. 99 indexed citations
17.
Ke, Xiaoxing, Sara Bals, Daire Cott, et al.. (2010). Three-Dimensional Analysis of Carbon Nanotube Networks in Interconnects by Electron Tomography without Missing Wedge Artifacts. Microscopy and Microanalysis. 16(2). 210–217. 42 indexed citations
18.
Cott, Daire, et al.. (2010). Growth and characterization of horizontally suspended CNTs across TiN electrode gaps. Nanotechnology. 21(24). 245604–245604. 10 indexed citations
19.
Chiodarelli, Nicolò, Daire Cott, Kai Arstila, et al.. (2010). Integration of Vertical Carbon Nanotube Bundles for Interconnects. Journal of The Electrochemical Society. 157(10). K211–K211. 28 indexed citations
20.
Ryan, Peter, et al.. (2009). Optimization of multi-walled carbon nanotube–metal contacts by electrical stressing. Nanotechnology. 21(4). 45705–45705. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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