Marc Schaekers

2.9k total citations
124 papers, 2.1k citations indexed

About

Marc Schaekers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Marc Schaekers has authored 124 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 114 papers in Electrical and Electronic Engineering, 42 papers in Atomic and Molecular Physics, and Optics and 24 papers in Materials Chemistry. Recurrent topics in Marc Schaekers's work include Semiconductor materials and devices (90 papers), Semiconductor materials and interfaces (37 papers) and Advancements in Semiconductor Devices and Circuit Design (30 papers). Marc Schaekers is often cited by papers focused on Semiconductor materials and devices (90 papers), Semiconductor materials and interfaces (37 papers) and Advancements in Semiconductor Devices and Circuit Design (30 papers). Marc Schaekers collaborates with scholars based in Belgium, United States and China. Marc Schaekers's co-authors include Christophe Detavernier, Hao Yu, Naoto Horiguchi, K. De Meyer, Davy Deduytsche, Matty Caymax, Nadine Collaert, Qi Xie, Annelies Delabie and Koen Martens and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Marc Schaekers

116 papers receiving 2.0k citations

Peers

Marc Schaekers

EEE

AMPO

EOMM

Mitsuaki Yano Japan

Johann Toudert Spain

B. M. Keyes United States

Tohru Den Japan

Gavin R. Bell United Kingdom

A. Terrasi Italy

SeGi Yu South Korea

I. Mártil Spain

Ioannis Deretzis Italy

M. Inoue Japan

Mitsuaki Yano Japan

Marc Schaekers

1.6k ×0.9

EEE

649 ×0.9

AMPO

1.7k ×2.6

154 ×0.4

651 ×2.1

EOMM

Citations per year, relative to Marc Schaekers Marc Schaekers (= 1×) peers Mitsuaki Yano

Countries citing papers authored by Marc Schaekers

Since Specialization

Citations

This map shows the geographic impact of Marc Schaekers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Marc Schaekers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Marc Schaekers more than expected).

Fields of papers citing papers by Marc Schaekers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Marc Schaekers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Marc Schaekers. The network helps show where Marc Schaekers may publish in the future.

Co-authorship network of co-authors of Marc Schaekers

This figure shows the co-authorship network connecting the top 25 collaborators of Marc Schaekers. A scholar is included among the top collaborators of Marc Schaekers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Marc Schaekers. Marc Schaekers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Salahuddin, Shairfe Muhammad, E. Dentoni Litta, Anshul Gupta, et al.. (2020). Thermal Stress-Aware CMOS–SRAM Partitioning in Sequential 3-D Technology. IEEE Transactions on Electron Devices. 67(11). 4631–4635. 2 indexed citations

Vohra, Anurag, Clément Porret, David Kohen, et al.. (2019). Low temperature epitaxial growth of Ge:B and Ge _0.99 Sn _0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. Japanese Journal of Applied Physics. 58(SB). SBBA04–SBBA04. 11 indexed citations

Porret, Clément, Andriy Hikavyy, S. Baudot, et al.. (2019). Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. ECS Journal of Solid State Science and Technology. 8(8). P392–P399. 17 indexed citations

Schaekers, Marc, Hao Yu, Andriy Hikavyy, et al.. (2017). Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation. T214–T215. 27 indexed citations

Yu, Hao, Marc Schaekers, Lin‐Lin Wang, et al.. (2017). TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe. IEEE Transactions on Electron Devices. 64(2). 500–506. 32 indexed citations

Simoen, Eddy, Marc Schaekers, Jinbiao Liu, et al.. (2016). Defect engineering for shallow n‐type junctions in germanium: Facts and fiction. physica status solidi (a). 213(11). 2799–2808. 16 indexed citations

Yu, Hao, Marc Schaekers, Geoffrey Pourtois, et al.. (2016). Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2. IEEE Transactions on Electron Devices. 63(12). 4632–4641. 47 indexed citations

Yu, Hao, Marc Schaekers, S. Demuynck, et al.. (2016). Process options to enable (sub-)1e-9 Ohm.cm2 contact resistivity on Si devices. 66–68. 7 indexed citations

Yu, Hao, Marc Schaekers, T. Schram, et al.. (2016). Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium. IEEE Electron Device Letters. 37(4). 482–485. 27 indexed citations

10.

Radu, Iuliana, B. Govoreanu, S. Mertens, et al.. (2015). Switching mechanism in two-terminal vanadium dioxide devices. Nanotechnology. 26(16). 165202–165202. 54 indexed citations

11.

Demuynck, S., E. Kunnen, Janko Versluijs, et al.. (2014). Contact module at dense gate pitch technology challenges. 307–310. 4 indexed citations

12.

Martens, Koen, Iuliana Radu, S. Mertens, et al.. (2012). The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance. Journal of Applied Physics. 112(12). 47 indexed citations

13.

Pawlak, Małgorzata, B. Kaczer, Minsoo Kim, et al.. (2011). Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential. Symposium on VLSI Technology. 168–169. 4 indexed citations

14.

Radu, Iuliana, Koen Martens, S. Mertens, et al.. (2011). (Invited) Vanadium Oxide as a Memory Material. ECS Transactions. 35(2). 233–243. 16 indexed citations

15.

Xie, Qi, Davy Deduytsche, Marc Schaekers, et al.. (2010). Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer. Applied Physics Letters. 97(11). 34 indexed citations

16.

Selvaraja, Shankar Kumar, Erik Sleeckx, Wim Bogaerts, et al.. (2007). Low loss amorphous silicon photonic wire and ring resonator fabricated by CMOS process. Ghent University Academic Bibliography (Ghent University). 1–2. 1 indexed citations

17.

Selvaraja, Shankar Kumar, Wim Bogaerts, Dries Van Thourhout, et al.. (2007). Deposited silicon-on-insulator material technology for photonic integrated circuitry. Ghent University Academic Bibliography (Ghent University). 15–18. 2 indexed citations

18.

Cubaynes, F.N., V. C. Venezia, C. van der Marel, et al.. (2005). Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics. Applied Physics Letters. 86(17). 7 indexed citations

19.

Mertens, P., et al.. (1996). Chlorine Precursors For Gate Oxidation Processes. MRS Proceedings. 447. 1 indexed citations

20.

Vermeire, Bert, et al.. (1994). Effect of Different Chlorine Sources during Gate Oxidation. 143–146. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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