Marc Schaekers

2.9k citations

124 papers · 2.1k indexed · h-index 26

Electrical and Electronic Engineering top 2%
Atomic and Molecular Physics, and Optics top 5%
Materials Chemistry top 10%
Polymers and Plastics top 5%
Electronic, Optical and Magnetic Materials top 10%

Co-authors: Christophe DetavernierHao YuNaoto Horiguchi K. De Meyer Davy Deduytsche Matty Caymax Nadine Collaert Qi Xie
Topics: Semiconductor materials and devices (90 papers)Semiconductor materials and interfaces (37 papers)Advancements in Semiconductor Devices and Circuit Design (30 papers)
Cited by: Electrical and Electronic Engineering Polymers and Plastics Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Chemistry of Materials
Partner nations: Belgium United States China

In The Last Decade

Marc Schaekers

116 papers receiving 2.0k citations

Peers

Countries citing papers authored by Marc Schaekers

Since Specialization

Citations

This map shows the geographic impact of Marc Schaekers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Marc Schaekers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Marc Schaekers more than expected).

Fields of papers citing papers by Marc Schaekers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Marc Schaekers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Marc Schaekers. The network helps show where Marc Schaekers may publish in the future.

Co-authorship network of co-authors of Marc Schaekers

This figure shows the co-authorship network connecting the top 25 collaborators of Marc Schaekers. A scholar is included among the top collaborators of Marc Schaekers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Marc Schaekers. Marc Schaekers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Thermal Stress-Aware CMOS–SRAM Partitioning in Sequential 3-D Technology 2020 ·IEEE Transactions on Electron Devices ·Shairfe Muhammad Salahuddin,E. Dentoni Litta,Anshul Gupta,R. Ritzenthaler,Marc Schaekers,(unknown),Hao Yu,A. Vandooren,Julien Ryckaert,(unknown),A. Spessot	2
2	Low temperature epitaxial growth of Ge:B and Ge _0.99 Sn _0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment 2019 ·Japanese Journal of Applied Physics ·Anurag Vohra,Clément Porret,David Kohen,(unknown),(unknown),Marc Schaekers,John Tolle,Andriy Hikavyy,E. Capogreco,Liesbeth Witters,R. Langer,Wilfried Vandervorst,Roger Loo	11
3	Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration 2019 ·ECS Journal of Solid State Science and Technology ·Clément Porret,Andriy Hikavyy,(unknown),S. Baudot,Anurag Vohra,Bernardette Kunert,Bastien Douhard,Janusz Bogdanowicz,Marc Schaekers,David Kohen,(unknown),J. Tolle,Lucas Petersen Barbosa Lima,Amir Sammak,Giordano Scappucci,Erik Rosseel,R. Langer,Roger Loo	17
4	Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation 2017 ·(unknown),Marc Schaekers,Hao Yu,(unknown),Andriy Hikavyy,L. Daté,(unknown),(unknown),(unknown),(unknown),A. J. Mayur,(unknown),H. van Meer,Yu-Long Jiang,K. De Meyer,D. Mocuta,Naoto Horiguchi	27
5	TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe 2017 ·IEEE Transactions on Electron Devices ·Hao Yu,Marc Schaekers,(unknown),Lin‐Lin Wang,(unknown),Naoto Horiguchi,Yu-Long Jiang,D. Mocuta,Nadine Collaert,K. De Meyer	32
6	Defect engineering for shallow n‐type junctions in germanium: Facts and fiction 2016 ·physica status solidi (a) ·Eddy Simoen,Marc Schaekers,Jinbiao Liu,Jun Luo,Chao Zhao,Kathy Barla,Nadine Collaert	16
7	Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2 2016 ·IEEE Transactions on Electron Devices ·Hao Yu,Marc Schaekers,(unknown),Geoffrey Pourtois,Erik Rosseel,Joon-Gon Lee,Woo-Bin Song,(unknown),(unknown),Soon Aik Chew,S. Demuynck,Dae-Yong Kim,Kathy Barla,A. Mocuta,Naoto Horiguchi,Aaron Thean,Nadine Collaert,K. De Meyer	47
8	Process options to enable (sub-)1e-9 Ohm.cm2 contact resistivity on Si devices 2016 ·Hao Yu,Marc Schaekers,S. Demuynck,Erik Rosseel,(unknown),Soon Aik Chew,(unknown),Stefan Kubicek,K. Barla,A. Mocuta,Naoto Horiguchi,Nadine Collaert,Aaron Thean,K. De Meyer	7
9	Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium 2016 ·IEEE Electron Device Letters ·Hao Yu,Marc Schaekers,T. Schram,(unknown),A. J. Mayur,Jérôme Mitard,Liesbeth Witters,Kathy Barla,Nadine Collaert,Naoto Horiguchi,Aaron Thean,K. De Meyer	27
10	Switching mechanism in two-terminal vanadium dioxide devices 2015 ·Nanotechnology ·Iuliana Radu,B. Govoreanu,S. Mertens,Xiaodong Shi,Mirco Cantoro,Marc Schaekers,M. Jurczak,Stefan De Gendt,A. Stesmans,J. A. Kittl,Marc Heyns,Koen Martens	54
11	Contact module at dense gate pitch technology challenges 2014 ·S. Demuynck,(unknown),E. Kunnen,Janko Versluijs,Kristof Croes,Chun-Yi Wu,Marc Schaekers,A. Peter,(unknown),Lieve Teugels,J. Bömmels	4
12	The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance 2012 ·Journal of Applied Physics ·Koen Martens,Iuliana Radu,S. Mertens,Xiaodong Shi,Laura Nyns,Stefan Cosemans,Paola Favia,H. Bender,Thierry Conard,Marc Schaekers,Stefan De Gendt,V. V. Afanas’ev,J. A. Kittl,Marc Heyns,M. Jurczak	47
13	Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential 2011 ·Symposium on VLSI Technology ·Małgorzata Pawlak,B. Kaczer,(unknown),Minsoo Kim,M. Popovici,Johan Swerts,Kazuyuki Tomida,Karl Opsomer,Marc Schaekers,C. Vrancken,B. Govoreanu,Attilio Belmonte,C. Demeurisse,I. Debusschere,L. Altimime,V. V. Afanas’ev,J. A. Kittl	4
14	(Invited) Vanadium Oxide as a Memory Material 2011 ·ECS Transactions ·Iuliana Radu,Koen Martens,S. Mertens,Christoph Adelmann,(unknown),Hilde Tielens,Marc Schaekers,Geoffrey Pourtois,Sven Van Elshocht,Stefan De Gendt,Marc Heyns,J. A. Kittl	16
15	Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer 2010 ·Applied Physics Letters ·Qi Xie,Davy Deduytsche,Marc Schaekers,Matty Caymax,Annelies Delabie,Xin-Ping Qu,Christophe Detavernier	34
16	Low loss amorphous silicon photonic wire and ring resonator fabricated by CMOS process 2007 ·Ghent University Academic Bibliography (Ghent University) ·Shankar Kumar Selvaraja,Erik Sleeckx,Wim Bogaerts,Marc Schaekers,Pieter Dumon,Dries Van Thourhout,Roel Baets	1
17	Deposited silicon-on-insulator material technology for photonic integrated circuitry 2007 ·Ghent University Academic Bibliography (Ghent University) ·Shankar Kumar Selvaraja,Wim Bogaerts,Dries Van Thourhout,Roel Baets,Erik Sleeckx,Marc Schaekers	2
18	Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics 2005 ·Applied Physics Letters ·F.N. Cubaynes,V. C. Venezia,C. van der Marel,(unknown),(unknown),Xiaodong Shi,A. Rothschild,Marc Schaekers	7
19	Chlorine Precursors For Gate Oxidation Processes 1996 ·MRS Proceedings ·(unknown),P. Mertens,Bert Vermeire,Marc Heyns,(unknown),(unknown),Marc Schaekers	1
20	Effect of Different Chlorine Sources during Gate Oxidation 1994 ·Bert Vermeire,Paul Mertens,(unknown),Karine Kenis,Marc Heyns,Marc Schaekers,(unknown)	1

About Marc Schaekers

Marc Schaekers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 124 papers that have together received 2.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (90 papers), Semiconductor materials and interfaces (37 papers) and Advancements in Semiconductor Devices and Circuit Design (30 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Polymers and Plastics (350 citations) and Atomic and Molecular Physics, and Optics (734 citations). Marc Schaekers has collaborated with scholars based in Belgium, United States and China. Frequent co-authors include Christophe Detavernier, Hao Yu, Naoto Horiguchi, K. De Meyer, Davy Deduytsche, Matty Caymax, Nadine Collaert, Qi Xie, Annelies Delabie and Koen Martens. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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