G. Boccardi

615 total citations
33 papers, 222 citations indexed

About

G. Boccardi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, G. Boccardi has authored 33 papers receiving a total of 222 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in G. Boccardi's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). G. Boccardi is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). G. Boccardi collaborates with scholars based in Belgium, Netherlands and United States. G. Boccardi's co-authors include Naoto Horiguchi, Aaron Thean, G. Groeseneken, T. Chiarella, Jae Wook Lee, Lars‐Åke Ragnarsson, Hiroaki Arimura, M. Togo, Eddy Simoen and A. Veloso and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and IEEE Transactions on Electron Devices.

In The Last Decade

G. Boccardi

30 papers receiving 215 citations

Peers

G. Boccardi
S.M. Jang Taiwan
N. Loubet United States
S. C. Song United States
R. Kies France
Wei Yip Loh Singapore
Pieter Lagrain Belgium
Piotr J. Cegielski Germany
Kaushik Nayak India
C. Bowen United States
M. Minondo France
S.M. Jang Taiwan
G. Boccardi
Citations per year, relative to G. Boccardi G. Boccardi (= 1×) peers S.M. Jang

Countries citing papers authored by G. Boccardi

Since Specialization
Citations

This map shows the geographic impact of G. Boccardi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Boccardi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Boccardi more than expected).

Fields of papers citing papers by G. Boccardi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Boccardi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Boccardi. The network helps show where G. Boccardi may publish in the future.

Co-authorship network of co-authors of G. Boccardi

This figure shows the co-authorship network connecting the top 25 collaborators of G. Boccardi. A scholar is included among the top collaborators of G. Boccardi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Boccardi. G. Boccardi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kumar, Annie, Abhitosh Vais, G. Boccardi, et al.. (2024). An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. VUBIR (Vrije Universiteit Brussel). 940–943.
2.
Parvais, Bertrand, Abhitosh Vais, Y. Mols, et al.. (2022). III-V on a Si platform for the next generations of communication systems. 250–252. 3 indexed citations
3.
Arimura, Hiroaki, G. Boccardi, Nadine Collaert, et al.. (2020). Low-Frequency Noise Characterization of Germanium n-Channel FinFETs. IEEE Transactions on Electron Devices. 67(7). 2872–2877. 10 indexed citations
4.
Arimura, Hiroaki, E. Capogreco, Anurag Vohra, et al.. (2020). Toward high-performance and reliable Ge channel devices for 2 nm node and beyond. 2.1.1–2.1.4. 15 indexed citations
5.
Arimura, Hiroaki, Harold Dekkers, Lars‐Åke Ragnarsson, et al.. (2019). Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation. IEEE Transactions on Electron Devices. 66(12). 5387–5392. 4 indexed citations
6.
Briggs, B., Christopher J. Wilson, Julien Ryckaert, et al.. (2018). CMOS Area Scaling And the Need for High Aspect Ratio Vias. 1 indexed citations
7.
Adelmann, Christoph, Shibesh Dutta, Anshul Gupta, et al.. (2018). Alternative Metals: From AB Initio Screening to Calibrated Narrow Line Models. 154–156. 17 indexed citations
8.
9.
Collaert, Nadine, A. Alian, Hiroaki Arimura, et al.. (2015). Advanced channel materials for the semiconductor industry. 3. 1–5. 1 indexed citations
10.
Veloso, A., Jae Wook Lee, Eddy Simoen, et al.. (2014). (Invited) Replacement Metal Gate/High-k Last Technology for Aggressively Scaled Planar and FinFET-Based Devices. ECS Transactions. 61(2). 225–235. 7 indexed citations
11.
Togo, M., G. Boccardi, R. Ritzenthaler, et al.. (2013). Heated implantation with amorphous Carbon CMOS mask for scaled FinFETs. Symposium on VLSI Technology. 6 indexed citations
12.
Lee, Jae Wook, Eddy Simoen, A. Veloso, et al.. (2013). Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor. ACS Applied Materials & Interfaces. 5(18). 8865–8868. 15 indexed citations
13.
Lee, Jae Wook, Eddy Simoen, R. Ritzenthaler, et al.. (2013). 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor. Applied Physics Letters. 102(7). 10 indexed citations
14.
Lee, Jae Wook, M. Togo, G. Boccardi, et al.. (2013). Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors. Applied Physics Letters. 102(22). 28 indexed citations
15.
Vandeweyer, T., Efrain Altamirano Sánchez, Harold Dekkers, et al.. (2013). Self-aligned double patterning of 1× nm FinFETs; A new device integration through the challenging geometry. 101–104. 5 indexed citations
16.
Veloso, A., Lars‐Åke Ragnarsson, T. Schram, et al.. (2013). Integration Challenges and Options of Replacement High-κ/Metal Gate Technology for (Sub-)22nm Technology Nodes. ECS Transactions. 52(1). 385–390. 5 indexed citations
17.
Lee, Jae Wook, Eddy Simoen, A. Veloso, et al.. (2013). Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate. IEEE Transactions on Electron Devices. 60(9). 2960–2962. 11 indexed citations
18.
Boccardi, G., R. Ritzenthaler, M. Togo, et al.. (2012). RMG Tech. Integration in FinFET Devices. 1 indexed citations
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Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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