C. Caillat

501 total citations
33 papers, 368 citations indexed

About

C. Caillat is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. Caillat has authored 33 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in C. Caillat's work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). C. Caillat is often cited by papers focused on Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). C. Caillat collaborates with scholars based in Belgium, France and United States. C. Caillat's co-authors include A. Berthelot, M. Aoulaiche, D. Fraboulet, P. Mazoyer, S. E. Smith, E. Gerritsen, R. Ritzenthaler, T. Schram, Eddy Simoen and M. Jurczak and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

C. Caillat

33 papers receiving 356 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Caillat Belgium	11	359	68	47	22	20	33	368
Jeff J. Peterson United States	16	629 1.8×	145 2.1×	42 0.9×	39 1.8×	34 1.7×	35	660
C. Papadas France	14	480 1.3×	129 1.9×	41 0.9×	22 1.0×	25 1.3×	60	508
M. Togo Japan	14	599 1.7×	66 1.0×	62 1.3×	19 0.9×	24 1.2×	68	619
P. O’Neil United States	6	249 0.7×	74 1.1×	59 1.3×	16 0.7×	9 0.5×	14	268
M.F. Li Singapore	11	598 1.7×	110 1.6×	69 1.5×	11 0.5×	29 1.4×	20	612
J.T. Clemens United States	9	426 1.2×	33 0.5×	55 1.2×	8 0.4×	15 0.8×	31	454
S. Mori Japan	10	296 0.8×	52 0.8×	26 0.6×	31 1.4×	27 1.4×	32	309
Kaizad Mistry United States	5	396 1.1×	133 2.0×	22 0.5×	10 0.5×	23 1.1×	8	427
H.K. Kang South Korea	6	141 0.4×	67 1.0×	36 0.8×	14 0.6×	31 1.6×	22	167
Y. Kamigaki Japan	9	355 1.0×	95 1.4×	32 0.7×	8 0.4×	19 0.9×	18	370

Countries citing papers authored by C. Caillat

Since Specialization

Citations

This map shows the geographic impact of C. Caillat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Caillat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Caillat more than expected).

Fields of papers citing papers by C. Caillat

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Caillat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Caillat. The network helps show where C. Caillat may publish in the future.

Co-authorship network of co-authors of C. Caillat

This figure shows the co-authorship network connecting the top 25 collaborators of C. Caillat. A scholar is included among the top collaborators of C. Caillat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Caillat. C. Caillat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Simoen, Eddy, et al.. (2020). On the Variability of the Low-Frequency Noise in UTBOX SOI nMOS-FETs. Journal of Integrated Circuits and Systems. 8(2). 71–77. 1 indexed citations

Caillat, C., Haitao Liu, Yifen Liu, et al.. (2017). 3DNAND GIDL-Assisted Body Biasing for Erase Enabling CMOS under Array (CUA) Architecture. 1–4. 39 indexed citations

Aoulaiche, M., E. Simoen, C. Caillat, et al.. (2015). Understanding and optimizing the floating body retention in FDSOI UTBOX. Solid-State Electronics. 117. 123–129. 3 indexed citations

Simoen, Eddy, Alejandro Federico, M. Aoulaiche, et al.. (2014). Low-frequency noise assessment of border traps in Al₂O₃ capped DRAM peripheral MOSFETs. Semiconductor Science and Technology. 29(11). 115015–115015. 13 indexed citations

Aoulaiche, M., A. Bravaix, Eddy Simoen, et al.. (2014). Endurance of One Transistor Floating Body RAM on UTBOX SOI. IEEE Transactions on Electron Devices. 61(3). 801–805. 10 indexed citations

Aoulaiche, M., Eddy Simoen, Liesbeth Witters, et al.. (2013). Floating body retention analysis for 1T-DRAM. 1 indexed citations

Schram, T., A. Spessot, R. Ritzenthaler, et al.. (2013). Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices. Microelectronic Engineering. 120. 157–162. 10 indexed citations

Ritzenthaler, R., T. Schram, E. Bury, et al.. (2013). Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks. Solid-State Electronics. 84. 22–27. 9 indexed citations

Aoulaiche, M., Eddy Simoen, C. Caillat, et al.. (2012). Reliability and retention of floating body RAM on bulk FinFET. 1(2). 33–40. 2 indexed citations

10.

Simoen, Eddy, P. Fazan, A. Veloso, et al.. (2012). On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. 2012. 338–341. 2 indexed citations

11.

Simoen, Eddy, et al.. (2012). On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs. ECS Transactions. 49(1). 51–58. 4 indexed citations

12.

Mohapatra, Nihar R., et al.. (2009). Effect of source/drain asymmetry on the performance of Z-RAM® devices. 1–2. 2 indexed citations

13.

Berthelot, A., et al.. (2006). Highly Reliable TiN/ZrO2/TiN 3D Stacked Capacitors for 45 nm Embedded DRAM Technologies. 343–346. 20 indexed citations

14.

Gerritsen, E., C. Caillat, D. Fraboulet, et al.. (2005). Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM. Solid-State Electronics. 49(11). 1767–1775. 79 indexed citations

15.

Specht, Michael, M. Sanquer, C. Caillat, G. Guégan, & S. Deleonibus. (2003). Coulomb oscillations in 100 nm and 50 nm CMOS devices. 383–385. 2 indexed citations

16.

Caillat, C., S. Deleonibus, G. Guégan, et al.. (2002). A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching. Solid-State Electronics. 46(3). 349–352. 3 indexed citations

17.

Deleonibus, S., C. Caillat, G. Guégan, et al.. (2000). A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF ₂ pockets. IEEE Electron Device Letters. 21(4). 173–175. 24 indexed citations

18.

Clerc, R., G. Ghibaudo, C. Caillat, et al.. (2000). Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling. Microelectronics Reliability. 40(4-5). 571–575. 8 indexed citations

19.

Deleonibus, S., C. Caillat, J. Gautier, et al.. (1999). The decananometer CMOS era - Is there CMOS after CMOS?. European Solid-State Device Research Conference. 1. 119–126. 1 indexed citations

20.

Caillat, C., S. Deleonibus, G. Guégan, et al.. (1999). 65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation. 89–90. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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