Shih‐Hung Chen

685 total citations
89 papers, 516 citations indexed

About

Shih‐Hung Chen is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Condensed Matter Physics. According to data from OpenAlex, Shih‐Hung Chen has authored 89 papers receiving a total of 516 indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Electrical and Electronic Engineering, 6 papers in Computer Networks and Communications and 5 papers in Condensed Matter Physics. Recurrent topics in Shih‐Hung Chen's work include Electrostatic Discharge in Electronics (54 papers), Semiconductor materials and devices (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (33 papers). Shih‐Hung Chen is often cited by papers focused on Electrostatic Discharge in Electronics (54 papers), Semiconductor materials and devices (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (33 papers). Shih‐Hung Chen collaborates with scholars based in Belgium, Taiwan and United States. Shih‐Hung Chen's co-authors include Ming‐Dou Ker, Dimitri Linten, Geert Hellings, G. Groeseneken, Ming-Dou Ker, Mirko Scholz, Hang-Ting Lue, S. Thijs, Yen-Hao Shih and Kuang-Yeu Hsieh and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

Shih‐Hung Chen

81 papers receiving 491 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shih‐Hung Chen Belgium 13 461 81 58 28 27 89 516
Shiro Kamohara Japan 17 906 2.0× 111 1.4× 86 1.5× 30 1.1× 35 1.3× 81 956
Mohit Gupta Belgium 14 559 1.2× 39 0.5× 85 1.5× 16 0.6× 121 4.5× 45 645
Shounak Dhar United States 12 558 1.2× 54 0.7× 250 4.3× 9 0.3× 60 2.2× 22 631
Neal K. Bambha United States 11 134 0.3× 93 1.1× 108 1.9× 31 1.1× 97 3.6× 35 323
Jaeyong Jeong South Korea 12 227 0.5× 217 2.7× 79 1.4× 66 2.4× 53 2.0× 55 446
J.-H. Chern United States 8 374 0.8× 23 0.3× 102 1.8× 17 0.6× 24 0.9× 24 414
Ki‐Whan Song South Korea 8 225 0.5× 67 0.8× 29 0.5× 10 0.4× 40 1.5× 27 266
Hideaki Aochi Japan 9 456 1.0× 259 3.2× 52 0.9× 58 2.1× 37 1.4× 12 536
Ling-Wu Yang Taiwan 13 470 1.0× 138 1.7× 23 0.4× 21 0.8× 18 0.7× 39 499
Jungdal Choi South Korea 10 252 0.5× 141 1.7× 34 0.6× 30 1.1× 20 0.7× 25 309

Countries citing papers authored by Shih‐Hung Chen

Since Specialization
Citations

This map shows the geographic impact of Shih‐Hung Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shih‐Hung Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shih‐Hung Chen more than expected).

Fields of papers citing papers by Shih‐Hung Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shih‐Hung Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shih‐Hung Chen. The network helps show where Shih‐Hung Chen may publish in the future.

Co-authorship network of co-authors of Shih‐Hung Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Shih‐Hung Chen. A scholar is included among the top collaborators of Shih‐Hung Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shih‐Hung Chen. Shih‐Hung Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Shih‐Hung, et al.. (2024). A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology. IEEE Journal of Solid-State Circuits. 60(2). 615–625.
3.
Chen, Shih‐Hung, Geert Hellings, A. Veloso, et al.. (2024). Impact of Sub-μm Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era. IEEE Transactions on Electron Devices. 71(4). 2278–2283. 1 indexed citations
4.
Wu, Weimin, Shih‐Hung Chen, Bertrand Parvais, et al.. (2023). ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs. IEEE Electron Device Letters. 44(8). 1248–1251. 3 indexed citations
5.
Lin, Shih‐Hsiang, Marko Simicic, Shih‐Hung Chen, et al.. (2023). ESD mitigation for 3D IC hybrid bonding. VUBIR (Vrije Universiteit Brussel). 1–9. 1 indexed citations
6.
Wu, Weimin, Ming‐Dou Ker, Shih‐Hung Chen, et al.. (2022). ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs. IEEE Transactions on Electron Devices. 69(4). 2180–2187. 5 indexed citations
7.
Wu, Weimin, Ming‐Dou Ker, Shih‐Hung Chen, et al.. (2020). RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process. IEEE Transactions on Electron Devices. 67(7). 2752–2759. 8 indexed citations
8.
Simicic, Marko, et al.. (2020). Optimization of Wafer-Level Low-Impedance Contact CDM Testers. 1 indexed citations
9.
Scholz, Mirko, Geert Hellings, Shih‐Hung Chen, & Dimitri Linten. (2017). Tunable ESD clamp for high-voltage power I/O pins of a battery charge circuit in mobile applications. 248–251. 1 indexed citations
10.
Nagata, Makoto, Satoshi Takaya, Hiroaki Ikeda, et al.. (2014). CDM protection of a 3D TSV memory IC with a 100 GB/s wide I/O data bus. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 3 indexed citations
11.
Scholz, Mirko, Shih‐Hung Chen, Geert Hellings, & Dimitri Linten. (2013). Impact of the on-chip and off-chip ESD protection network on transient-induced latch-up in CMOS IC. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 5 indexed citations
12.
Linten, Dimitri, Geert Hellings, Shih‐Hung Chen, et al.. (2013). ESD performance of high mobility SiGe quantum well bulk finFET diodes and PMOS devices. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 4 indexed citations
13.
Chen, Shih‐Hung, Geert Hellings, S. Thijs, et al.. (2013). Exploring ESD challenges in sub-20-nm bulk FinFET CMOS technology nodes. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 8 indexed citations
14.
Chen, Shih‐Hung, S. Thijs, Dimitri Linten, et al.. (2012). ESD protection devices placed inside keep-out zone (KOZ) of through Silicon Via (TSV) in 3D stacked integrated circuits. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 12 indexed citations
15.
Hellings, Geert, Dimitri Linten, S. Thijs, et al.. (2012). ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling. Electrical Overstress/Electrostatic Discharge Symposium. 1–6. 5 indexed citations
16.
Thijs, S., Alessio Griffoni, Dimitri Linten, et al.. (2011). On gated diodes for ESD protection in bulk FinFET CMOS technology. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 15 indexed citations
17.
Scholz, Mirko, S. Thijs, Alessio Griffoni, et al.. (2011). System-level ESD protection of high-voltage tolerant IC pins-A case study. VUBIR (Vrije Universiteit Brussel). 35–38. 1 indexed citations
18.
Chen, Shih‐Hung, et al.. (2009). An automated IC chip marking inspection system for surface mounted devices on taping machines. Journal of Scientific & Industrial Research. 68(5). 361–366. 9 indexed citations
19.
Chen, Shih‐Hung, et al.. (2005). A new failure mechanism on analog I/O cell under ND-mode esd stress in deep-submicron CMOS technology. 46. 209–212. 1 indexed citations
20.
Lu, Hai‐Han, et al.. (2005). Employing split-band technique and optical SSB filter to Improve directly modulated fiber optical CATV system performances. IEICE Electronics Express. 2(11). 344–348. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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