Wendy Vanherle

440 total citations
14 papers, 220 citations indexed

About

Wendy Vanherle is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Wendy Vanherle has authored 14 papers receiving a total of 220 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Materials Chemistry. Recurrent topics in Wendy Vanherle's work include Advancements in Semiconductor Devices and Circuit Design (7 papers), Semiconductor materials and devices (7 papers) and Photonic and Optical Devices (5 papers). Wendy Vanherle is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (7 papers), Semiconductor materials and devices (7 papers) and Photonic and Optical Devices (5 papers). Wendy Vanherle collaborates with scholars based in Belgium, Netherlands and United Kingdom. Wendy Vanherle's co-authors include Roger Loo, Joris Van Campenhout, Guy Lepage, Günther Roelkens, Yosuke Shimura, Muhammad Muneeb, Aditya Malik, Sarvagya Dwivedi, Peter Verheyen and Liesbeth Witters and has published in prestigious journals such as Journal of Applied Physics, Optics Express and Thin Solid Films.

In The Last Decade

Wendy Vanherle

13 papers receiving 210 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wendy Vanherle Belgium 7 218 107 27 21 8 14 220
P. Mehta United Kingdom 9 288 1.3× 160 1.5× 20 0.7× 20 1.0× 3 0.4× 16 301
Yasuo Shibata Japan 11 399 1.8× 116 1.1× 25 0.9× 18 0.9× 4 0.5× 40 418
A. G. Kuzmenkov Russia 10 267 1.2× 213 2.0× 11 0.4× 18 0.9× 4 0.5× 64 298
Lorenzo Mastronardi United Kingdom 7 242 1.1× 143 1.3× 12 0.4× 25 1.2× 11 1.4× 20 256
Hideto Furuyama Japan 9 313 1.4× 159 1.5× 14 0.5× 32 1.5× 17 2.1× 44 320
E. Shaw United States 8 332 1.5× 117 1.1× 13 0.5× 33 1.6× 5 0.6× 11 353
Heinz‐Gunter Bach Germany 10 253 1.2× 95 0.9× 10 0.4× 22 1.0× 2 0.3× 25 259
G.G. Mekonnen Germany 11 464 2.1× 127 1.2× 8 0.3× 14 0.7× 11 1.4× 67 470
S. Messaoudène France 10 359 1.6× 173 1.6× 10 0.4× 27 1.3× 5 0.6× 23 364
C. Fortin France 9 267 1.2× 158 1.5× 13 0.5× 6 0.3× 5 0.6× 25 275

Countries citing papers authored by Wendy Vanherle

Since Specialization
Citations

This map shows the geographic impact of Wendy Vanherle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wendy Vanherle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wendy Vanherle more than expected).

Fields of papers citing papers by Wendy Vanherle

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wendy Vanherle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wendy Vanherle. The network helps show where Wendy Vanherle may publish in the future.

Co-authorship network of co-authors of Wendy Vanherle

This figure shows the co-authorship network connecting the top 25 collaborators of Wendy Vanherle. A scholar is included among the top collaborators of Wendy Vanherle based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wendy Vanherle. Wendy Vanherle is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Loo, Roger, Yosuke Shimura, Nouredine Rassoul, et al.. (2025). Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications. Journal of Applied Physics. 138(5).
2.
Loo, Roger, Hiroaki Arimura, Daire Cott, et al.. (2018). Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. ECS Journal of Solid State Science and Technology. 7(2). P66–P72. 16 indexed citations
3.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2016). Si-passivated Ge nFET towards a reliable Ge CMOS. 1 indexed citations
4.
Malik, Aditya, Muhammad Muneeb, Miloš Nedeljković, et al.. (2016). Silicon-based Photonic Integrated Circuits for the Mid-infrared. Procedia Engineering. 140. 144–151. 11 indexed citations
5.
Srinivasan, Srinivasan Ashwyn, Peter Verheyen, Roger Loo, et al.. (2016). 50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator. Optical Fiber Communication Conference. Tu3D.7–Tu3D.7. 26 indexed citations
6.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2015). Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation. 21.6.1–21.6.4. 27 indexed citations
7.
Malik, Aditya, Sarvagya Dwivedi, Muhammad Muneeb, et al.. (2014). Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared. Optics Express. 22(23). 28479–28479. 92 indexed citations
8.
Sioncke, Sonja, Wendy Vanherle, Ts. Ivanov, et al.. (2013). Si cap passivation for Ge nMOS applications. Microelectronic Engineering. 109. 46–49. 6 indexed citations
9.
Hikavyy, Andriy, et al.. (2013). High Ge Content SiGe Selective Processes for Source/Drain in Manufacturing the Next Generations of pMOS Transistors. ECS Journal of Solid State Science and Technology. 2(6). P282–P286. 5 indexed citations
10.
Huylenbroeck, Stefaan Van, A. Sibaja-Hernandez, R. Venegas, et al.. (2011). Pedestal collector optimization for high speed SiGe:C HBT. 66–69. 9 indexed citations
11.
Hikavyy, Andriy, Wendy Vanherle, J. Dekoster, et al.. (2011). Selective Epitaxial Growth: Trends in a Modern Transistor Device Fabrication. ECS Transactions. 34(1). 455–465. 4 indexed citations
12.
Hikavyy, Andriy, Wendy Vanherle, Benjamin Vincent, et al.. (2011). Growth of high Ge content SiGe on (110) oriented Si wafers. Thin Solid Films. 520(8). 3179–3184. 4 indexed citations
13.
Loo, Roger, Andriy Hikavyy, Frederik Leys, et al.. (2009). Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 145-146. 177–180. 18 indexed citations
14.
Iacopi, Francesca, R. Rooyackers, Roger Loo, et al.. (2009). Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices. MRS Proceedings. 1178. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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