T. Kauerauf

2.6k total citations
97 papers, 1.9k citations indexed

About

T. Kauerauf is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Kauerauf has authored 97 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 95 papers in Electrical and Electronic Engineering, 10 papers in Electronic, Optical and Magnetic Materials and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Kauerauf's work include Semiconductor materials and devices (94 papers), Advancements in Semiconductor Devices and Circuit Design (76 papers) and Integrated Circuits and Semiconductor Failure Analysis (39 papers). T. Kauerauf is often cited by papers focused on Semiconductor materials and devices (94 papers), Advancements in Semiconductor Devices and Circuit Design (76 papers) and Integrated Circuits and Semiconductor Failure Analysis (39 papers). T. Kauerauf collaborates with scholars based in Belgium, Spain and Singapore. T. Kauerauf's co-authors include G. Groeseneken, R. Degraeve, B. Kaczer, E. Cartier, L. Pantisano, H.E. Maes, A. Kerber, Udo Schwalke, Philippe Roussel and Ph. Roussel and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

T. Kauerauf

96 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Kauerauf Belgium 25 1.9k 200 140 135 103 97 1.9k
R. Bellens Belgium 13 1.6k 0.8× 243 1.2× 117 0.8× 75 0.6× 41 0.4× 40 1.6k
T. Nigam United States 22 1.3k 0.7× 191 1.0× 85 0.6× 80 0.6× 33 0.3× 58 1.4k
Yusuke Shuto Japan 14 586 0.3× 346 1.7× 114 0.8× 301 2.2× 72 0.7× 51 836
D. Misra United States 17 906 0.5× 252 1.3× 94 0.7× 134 1.0× 45 0.4× 132 1.0k
P. Fazan United States 17 1.2k 0.7× 282 1.4× 123 0.9× 188 1.4× 53 0.5× 115 1.3k
Wolfgang Goes Austria 21 1.9k 1.0× 229 1.1× 50 0.4× 240 1.8× 43 0.4× 98 2.0k
S. Mertens Belgium 17 532 0.3× 236 1.2× 190 1.4× 436 3.2× 86 0.8× 57 779
Xinnan Lin China 17 921 0.5× 157 0.8× 65 0.5× 53 0.4× 98 1.0× 136 1.0k
J.-L. Ogier France 7 720 0.4× 171 0.9× 86 0.6× 54 0.4× 27 0.3× 29 749
Mehdi Saremi United States 17 750 0.4× 297 1.5× 37 0.3× 124 0.9× 56 0.5× 27 866

Countries citing papers authored by T. Kauerauf

Since Specialization
Citations

This map shows the geographic impact of T. Kauerauf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Kauerauf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Kauerauf more than expected).

Fields of papers citing papers by T. Kauerauf

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Kauerauf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Kauerauf. The network helps show where T. Kauerauf may publish in the future.

Co-authorship network of co-authors of T. Kauerauf

This figure shows the co-authorship network connecting the top 25 collaborators of T. Kauerauf. A scholar is included among the top collaborators of T. Kauerauf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Kauerauf. T. Kauerauf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Groeseneken, G., J. Franco, M. Cho, et al.. (2014). BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities. 34.4.1–34.4.4. 30 indexed citations
2.
Simoen, Eddy, Alejandro Federico, M. Aoulaiche, et al.. (2014). Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs. Semiconductor Science and Technology. 29(11). 115015–115015. 13 indexed citations
3.
Franco, J., B. Kaczer, M. Toledano-Luque, et al.. (2012). SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices—Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues. IEEE Transactions on Electron Devices. 60(1). 405–412. 17 indexed citations
4.
Kauerauf, T., et al.. (2012). Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs. IEEE Transactions on Device and Materials Reliability. 12(1). 166–170. 10 indexed citations
5.
Ragnarsson, Lars‐Åke, Christoph Adelmann, Yuichi Higuchi, et al.. (2012). Implementing cubic-phase HfO<inf>2</inf> with &#x03BA;-value &#x223C; 30 in low-V<inf>T</inf> replacement gate pMOS devices for improved EOT-Scaling and reliability. 91. 27–28. 9 indexed citations
6.
Velenis, Dimitrios, T. Kauerauf, Michele Stucchi, et al.. (2012). Electrical characterization method to study barrier integrity in 3D through-silicon vias. 304–308. 24 indexed citations
7.
Kauerauf, T., R. Degraeve, Lars‐Åke Ragnarsson, et al.. (2011). Methodologies for sub-1nm EOT TDDB evaluation. 2A.2.1–2A.2.10. 21 indexed citations
8.
Raghavan, Nagarajan, K. L. Pey, Xing Wu, et al.. (2011). Oxygen-Soluble Gate Electrodes for Prolonged High-$ \kappa$ Gate-Stack Reliability. IEEE Electron Device Letters. 32(3). 252–254. 18 indexed citations
9.
Raghavan, Nagarajan, et al.. (2011). Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime. IEEE Electron Device Letters. 32(6). 716–718. 27 indexed citations
10.
Amat, E., T. Kauerauf, R. Degraeve, et al.. (2010). Simulation of the hot‐carrier degradation in short channel transistors with high‐K dielectric. International Journal of Numerical Modelling Electronic Networks Devices and Fields. 23(4-5). 315–323. 1 indexed citations
11.
Amat, E., R. Rodrı́guez, M. Nafrı́a, et al.. (2009). New insights into the wide ID range channel hot-carrier degradation in high-k based devices. 1028–1032. 4 indexed citations
12.
Amat, E., T. Kauerauf, R. Degraeve, et al.. (2009). Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack. Microelectronic Engineering. 87(1). 47–50. 28 indexed citations
13.
Amat, E., T. Kauerauf, R. Degraeve, et al.. (2009). Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures. IEEE Transactions on Device and Materials Reliability. 9(3). 454–458. 40 indexed citations
14.
Govoreanu, B., R. Degraeve, T. Kauerauf, et al.. (2006). Performance of Direct Tunneling Floating Gate Memory with Medium-κ Dielectrics for Embedded-Random-Access Memory Applications. Japanese Journal of Applied Physics. 45(4S). 3170–3170. 1 indexed citations
15.
Ranjan, Rakesh, K. L. Pey, Ching‐Hsuan Tung, et al.. (2006). Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a HfO2∕TaN∕TiN transistor. Applied Physics Letters. 88(12). 11 indexed citations
16.
17.
O’Connor, Robert, Stephen McDonnell, G. Hughes, R. Degraeve, & T. Kauerauf. (2005). Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers. Semiconductor Science and Technology. 20(8). 668–672. 11 indexed citations
18.
Kauerauf, T., R. Degraeve, M. B. Zahid, et al.. (2005). Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?. IEEE Electron Device Letters. 26(10). 773–775. 28 indexed citations
19.
Kerber, A., E. Cartier, R. Degraeve, et al.. (2003). Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes. Microelectronic Engineering. 50(5). 1261–1269. 46 indexed citations
20.
Kerber, A., E. Cartier, R. Degraeve, et al.. (2002). Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration. 45–52. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by R. Bellens Breakdown of academic impact, for papers by T. Nigam Breakdown of academic impact, for papers by Yusuke Shuto Breakdown of academic impact, for papers by D. Misra Breakdown of academic impact, for papers by P. Fazan Breakdown of academic impact, for papers by Wolfgang Goes Breakdown of academic impact, for papers by S. Mertens Breakdown of academic impact, for papers by Xinnan Lin Breakdown of academic impact, for papers by J.-L. Ogier Breakdown of academic impact, for papers by Mehdi Saremi
Rankless by CCL
2026