Andriy Hikavyy

3.3k citations

152 papers · 1.4k indexed · h-index 20

Electrical and Electronic Engineering top 5%
Biomedical Engineering top 10%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry
Computational Mechanics

Co-authors: Roger Loo Naoto Horiguchi R. Rooyackers Nadine Collaert Liesbeth Witters Aaron Thean A. Vandooren Cedric Huyghebaert
Topics: Semiconductor materials and devices (105 papers)Advancements in Semiconductor Devices and Circuit Design (91 papers)Silicon and Solar Cell Technologies (39 papers)
Cited by: Electrical and Electronic Engineering Biomedical Engineering Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: Belgium United States Japan

In The Last Decade

Andriy Hikavyy

133 papers receiving 1.3k citations

Peers

Countries citing papers authored by Andriy Hikavyy

Since Specialization

Citations

This map shows the geographic impact of Andriy Hikavyy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andriy Hikavyy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andriy Hikavyy more than expected).

Fields of papers citing papers by Andriy Hikavyy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andriy Hikavyy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andriy Hikavyy. The network helps show where Andriy Hikavyy may publish in the future.

Co-authorship network of co-authors of Andriy Hikavyy

This figure shows the co-authorship network connecting the top 25 collaborators of Andriy Hikavyy. A scholar is included among the top collaborators of Andriy Hikavyy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Andriy Hikavyy. Andriy Hikavyy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method 2025 ·Microelectronic Engineering ·Paola Favia,(unknown),A. Veloso,Ankit Nalin Mehta,Gerardo Martínez,Olivier Richard,Andriy Hikavyy,(unknown),F. C. Seidel,Geoffrey Pourtois,(unknown),(unknown)	0
2	Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs 2024 ·Japanese Journal of Applied Physics ·Pierre Eyben,A. De Keersgieter,Philippe Matagne,T. Chiarella,Clément Porret,Andriy Hikavyy,Yong Kong Siew,Ludovic Goux,Jérôme Mitard,Naoto Horiguchi	1
3	Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices 2023 ·Japanese Journal of Applied Physics ·Clément Porret,(unknown),(unknown),Andriy Hikavyy,Erik Rosseel,R. Langer,Roger Loo	0
4	Low Temperature Selective Growth of Group-IV Source / Drain Epilayers for Advanced Contact Applications 2023 ·Clément Porret,Andriy Hikavyy,Erik Rosseel,Pierre Eyben,Gerardo Martínez,(unknown),(unknown),(unknown),Yosuke Shimura,Róbert Langer,Naoto Horiguchi,Roger Loo	0
5	Low Temperature Epitaxy of In Situ GaDoped Si_1-XGe_x: Dopant Incorporation, Structural and Electrical Properties 2022 ·ECS Transactions ·(unknown),Clément Porret,Andriy Hikavyy,(unknown),(unknown),R. J. H. Morris,Simone Pollastri,Danilo Oliveira de Souza,D. Grandjean,Roger Loo,A. Vantomme	1
6	B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts 2022 ·ECS Journal of Solid State Science and Technology ·(unknown),Clément Porret,Andriy Hikavyy,Erik Rosseel,(unknown),R. J. H. Morris,(unknown),Roger Loo,A. Vantomme	0
7	(Digital Presentation) Selective SiGe Vapor Etching Using Br₂ in View of Nanosheet Device Isolation 2022 ·ECS Transactions ·Roger Loo,(unknown),(unknown),Yumi Kawamura,Andriy Hikavyy,Erik Rosseel,Clément Porret,Ankit Nalin Mehta,(unknown)	0
8	Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices 2022 ·ECS Transactions ·Erik Rosseel,Clément Porret,Andriy Hikavyy,Roger Loo,O. Richard,(unknown),Dmitry Batuk,Hans Mertens,E. Dentoni Litta,Naoto Horiguchi	0
9	Low Temperature Epitaxy of In Situ GaDoped Si_1-XGe_x: Dopant Incorporation, Structural and Electrical Properties 2022 ·ECS Meeting Abstracts ·(unknown),Clément Porret,Andriy Hikavyy,(unknown),(unknown),R. J. H. Morris,Simone Pollastri,Danilo Oliveira de Souza,D. Grandjean,Roger Loo,A. Vantomme	0
10	Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors 2021 ·IEEE Transactions on Electron Devices ·Geert Eneman,A. Veloso,Paola Favia,Andriy Hikavyy,Clément Porret,Hiroaki Arimura,A. De Keersgieter,Geoffrey Pourtois,Roger Loo,A. Spessot,Philippe Matagne,Julien Ryckaert,Naoto Horiguchi	7
11	3D sequential CMOS top tier devices demonstration using a low temperature Smart Cut™ Si layer transfer 2021 ·(unknown),Zhicheng Wu,J. Franco,(unknown),Hiroaki Arimura,G. Mannaert,Erik Rosseel,Andriy Hikavyy,(unknown),Ionut Radu,E. Dentoni Litta,Naoto Horiguchi	1
12	Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration 2021 ·ECS Journal of Solid State Science and Technology ·Roger Loo,Anne Jourdain,(unknown),Clément Porret,Andriy Hikavyy,(unknown),(unknown),P. Storck,Gerald Beyer,Eric Beyne	4
13	(Invited) Stress Simulations of Fins, Wires, and Nanosheets 2020 ·ECS Meeting Abstracts ·Geert Eneman,A. Veloso,Paola Favia,Andriy Hikavyy,Clément Porret,Hiroaki Arimura,A. De Keersgieter,Geoffrey Pourtois,Roger Loo,A. Spessot,Philippe Matagne,Julien Ryckaert,Naoto Horiguchi	1
14	(Invited) Stress Simulations of Fins, Wires, and Nanosheets 2020 ·ECS Transactions ·Geert Eneman,A. Veloso,Paola Favia,Andriy Hikavyy,Clément Porret,Hiroaki Arimura,A. De Keersgieter,Geoffrey Pourtois,Roger Loo,A. Spessot,Philippe Matagne,Julien Ryckaert,Naoto Horiguchi	11
15	Low temperature epitaxial growth of Ge:B and Ge _0.99 Sn _0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment 2019 ·Japanese Journal of Applied Physics ·Anurag Vohra,Clément Porret,David Kohen,(unknown),(unknown),Marc Schaekers,John Tolle,Andriy Hikavyy,E. Capogreco,Liesbeth Witters,R. Langer,Wilfried Vandervorst,Roger Loo	11
16	Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration 2019 ·ECS Journal of Solid State Science and Technology ·Clément Porret,Andriy Hikavyy,(unknown),S. Baudot,Anurag Vohra,Bernardette Kunert,Bastien Douhard,Janusz Bogdanowicz,Marc Schaekers,David Kohen,(unknown),J. Tolle,Lucas Petersen Barbosa Lima,Amir Sammak,Giordano Scappucci,Erik Rosseel,R. Langer,Roger Loo	17
17	Application of Cl ₂ for low temperature etch and epitaxy 2019 ·Semiconductor Science and Technology ·Andriy Hikavyy,Clément Porret,Erik Rosseel,Alexey Milenin,Roger Loo	2
18	Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices 2019 ·physica status solidi (a) ·Clément Porret,Anurag Vohra,(unknown),Andriy Hikavyy,Bastien Douhard,Johan Meersschaut,Janusz Bogdanowicz,Erik Rosseel,Geoffrey Pourtois,R. Langer,Roger Loo	4
19	TEM investigations of gate-all-around nanowire devices 2019 ·Semiconductor Science and Technology ·Paola Favia,Olivier Richard,Geert Eneman,Hans Mertens,Hiroaki Arimura,E. Capogreco,Andriy Hikavyy,Liesbeth Witters,Paromita Kundu,Roger Loo,E. Vancoille,H. Bender	8
20	Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications 2015 ·E. Capogreco,R. Degraeve,J. G. Lisoni,(unknown),A. Arreghini,M. Toledano-Luque,Andriy Hikavyy,Toshinori Numata,K. De Meyer,G. Van den bosch,Jan Van Houdt	11

About Andriy Hikavyy

Andriy Hikavyy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 152 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (105 papers), Advancements in Semiconductor Devices and Circuit Design (91 papers) and Silicon and Solar Cell Technologies (39 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Biomedical Engineering (383 citations) and Atomic and Molecular Physics, and Optics (260 citations). Andriy Hikavyy has collaborated with scholars based in Belgium, United States and Japan. Frequent co-authors include Roger Loo, Naoto Horiguchi, R. Rooyackers, Nadine Collaert, Liesbeth Witters, Aaron Thean, A. Vandooren, Cedric Huyghebaert, H. Bender and Erik Rosseel. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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