G. M. Cohen

1.7k total citations
61 papers, 1.2k citations indexed

About

G. M. Cohen is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. M. Cohen has authored 61 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 23 papers in Biomedical Engineering and 22 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. M. Cohen's work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Nanowire Synthesis and Applications (17 papers). G. M. Cohen is often cited by papers focused on Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Nanowire Synthesis and Applications (17 papers). G. M. Cohen collaborates with scholars based in United States, Israel and France. G. M. Cohen's co-authors include Sarunya Bangsaruntip, J.W. Sleight, Amlan Majumdar, Lynne Gignac, Michael Guillorn, A. Majumdar, P. M. Mooney, J. Newbury, D. Ritter and S. Mittal and has published in prestigious journals such as Physical review. B, Condensed matter, ACS Nano and Applied Physics Letters.

In The Last Decade

G. M. Cohen

59 papers receiving 1.1k citations

Peers

G. M. Cohen
Nico Gruhler Germany
A. Mercha Belgium
S. Biesemans Belgium
Todd Bailey United States
Pin Su Taiwan
Marc Zussy France
David N. Hutchison United States
G. M. Cohen
Citations per year, relative to G. M. Cohen G. M. Cohen (= 1×) peers Liesbeth Witters

Countries citing papers authored by G. M. Cohen

Since Specialization
Citations

This map shows the geographic impact of G. M. Cohen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. M. Cohen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. M. Cohen more than expected).

Fields of papers citing papers by G. M. Cohen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. M. Cohen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. M. Cohen. The network helps show where G. M. Cohen may publish in the future.

Co-authorship network of co-authors of G. M. Cohen

This figure shows the co-authorship network connecting the top 25 collaborators of G. M. Cohen. A scholar is included among the top collaborators of G. M. Cohen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. M. Cohen. G. M. Cohen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cohen, G. M., Amlan Majumdar, Richard Haight, et al.. (2024). Drift of Schottky Barrier Height in Phase Change Materials. ACS Nano. 18(11). 8029–8037. 6 indexed citations
2.
Gong, Haibo, Vadim Tokranov, Kevin Brew, et al.. (2023). Three Programming States in Bilayer Ga–Sb Phase Change Memory With AlO x Diffusion Barrier. IEEE Transactions on Electron Devices. 70(7). 3511–3516. 2 indexed citations
3.
Gong, Haibo, Vadim Tokranov, Michail M. Yakimov, et al.. (2022). Electrical and structural properties of binary Ga–Sb phase change memory alloys. Journal of Applied Physics. 132(3). 3 indexed citations
4.
Ubaru, Shashanka, Lior Horesh, & G. M. Cohen. (2021). Dynamic graph and polynomial chaos based models for contact tracing data analysis and optimal testing prescription. Journal of Biomedical Informatics. 122. 103901–103901. 6 indexed citations
5.
Gong, Haibo, Vadim Tokranov, Michail M. Yakimov, et al.. (2021). Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State. 1–2. 2 indexed citations
6.
Cohen, G. M., et al.. (2014). CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wires. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9050. 905008–905008. 4 indexed citations
7.
Bangsaruntip, Sarunya, Karthik Balakrishnan, Josephine Chang, et al.. (2013). Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond. 20.2.1–20.2.4. 79 indexed citations
8.
Cohen, G. M., et al.. (2013). Buckling characterization of gate all around silicon nanowires. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8681. 868130–868130. 5 indexed citations
9.
Cohen, G. M., et al.. (2013). Overlay accuracy calibration. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8681. 86811G–86811G. 10 indexed citations
10.
Roberts, Jenny R., Robert R. Mercer, Rebecca Chapman, et al.. (2012). Pulmonary Toxicity, Distribution, and Clearance of Intratracheally Instilled Silicon Nanowires in Rats. Journal of Nanomaterials. 2012(1). 398302–398302. 22 indexed citations
11.
Gignac, Lynne, et al.. (2011). Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices. Microscopy and Microanalysis. 17(6). 889–895. 4 indexed citations
12.
Yaish, Yuval, et al.. (2011). Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth. Journal of Applied Physics. 109(9). 37 indexed citations
13.
Bangsaruntip, Sarunya, A. Majumdar, G. M. Cohen, et al.. (2010). Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm. 21–22. 43 indexed citations
14.
Cohen, G. M., P. M. Mooney, Vamsi Paruchuri, & H.J. Hovel. (2005). Dislocation-free strained silicon-on-silicon by in-place bonding. Applied Physics Letters. 86(25). 28 indexed citations
15.
Cohen, G. M., Lei Shan, Daniel M. Kuchta, et al.. (2004). Thermal impedance measurements of junction-down mounted single-side contact laser diodes. 38. 807–812. 1 indexed citations
16.
Mooney, P. M., G. M. Cohen, J. O. Chu, & Conal E. Murray. (2004). Elastic strain relaxation in free-standing SiGe/Si structures. Applied Physics Letters. 84(7). 1093–1095. 37 indexed citations
17.
Cohen, G. M., et al.. (2002). High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes. Journal of Applied Physics. 93(1). 245–250. 9 indexed citations
18.
Cohen, G. M., D. Ritter, V. Richter, & R. Kalish. (1999). Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP. Applied Physics Letters. 74(1). 43–45. 7 indexed citations
19.
Cohen, G. M. & D. Ritter. (1998). Microwave performance of Ga x In 1-x P/Ga 0.47 In 0.53 Asresonant tunnelling diodes. Electronics Letters. 34(12). 1267–1268. 3 indexed citations
20.
Maimon, S., G. M. Cohen, E. Finkman, et al.. (1998). Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection. Applied Physics Letters. 73(6). 800–802. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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