John Tolle

4.3k total citations
119 papers, 3.3k citations indexed

About

John Tolle is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, John Tolle has authored 119 papers receiving a total of 3.3k indexed citations (citations by other indexed papers that have themselves been cited), including 107 papers in Electrical and Electronic Engineering, 50 papers in Atomic and Molecular Physics, and Optics and 26 papers in Biomedical Engineering. Recurrent topics in John Tolle's work include Photonic and Optical Devices (85 papers), Semiconductor Lasers and Optical Devices (35 papers) and Advanced Photonic Communication Systems (33 papers). John Tolle is often cited by papers focused on Photonic and Optical Devices (85 papers), Semiconductor Lasers and Optical Devices (35 papers) and Advanced Photonic Communication Systems (33 papers). John Tolle collaborates with scholars based in United States, Belgium and Iraq. John Tolle's co-authors include Joe Margetis, Shui-Qing Yu, Wei Du, Greg Sun, Richard Soref, John Kouvetakis, Seyed Amir Ghetmiri, Aboozar Mosleh, Hameed A. Naseem and J. Menéndez and has published in prestigious journals such as Journal of the American Chemical Society, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

John Tolle

114 papers receiving 3.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
John Tolle United States 32 3.1k 1.6k 862 504 146 119 3.3k
Mohamed Benyoucef Germany 24 1.1k 0.3× 1.2k 0.8× 474 0.5× 532 1.1× 235 1.6× 80 1.8k
Mattias Hammar Sweden 25 1.2k 0.4× 1.3k 0.9× 336 0.4× 401 0.8× 59 0.4× 106 1.9k
Clément Merckling Belgium 28 2.2k 0.7× 1.0k 0.7× 572 0.7× 946 1.9× 55 0.4× 154 2.6k
Yong‐Hang Zhang United States 26 1.9k 0.6× 1.1k 0.7× 339 0.4× 947 1.9× 32 0.2× 167 2.3k
Anthony Lochtefeld United States 24 2.6k 0.8× 1.1k 0.7× 911 1.1× 555 1.1× 24 0.2× 109 2.9k
Kentarou Sawano Japan 27 1.5k 0.5× 1.5k 1.0× 317 0.4× 646 1.3× 49 0.3× 203 2.3k
Stefano Roddaro Italy 24 948 0.3× 1.2k 0.8× 680 0.8× 966 1.9× 117 0.8× 96 2.1k
Takeyoshi Sugaya Japan 25 2.1k 0.7× 1.5k 1.0× 450 0.5× 1.1k 2.3× 36 0.2× 213 2.7k
Moïra Hocevar France 19 798 0.3× 1.1k 0.7× 851 1.0× 638 1.3× 110 0.8× 38 1.8k
Dirk König Australia 26 1.7k 0.5× 910 0.6× 719 0.8× 1.3k 2.6× 23 0.2× 92 2.2k

Countries citing papers authored by John Tolle

Since Specialization
Citations

This map shows the geographic impact of John Tolle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Tolle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Tolle more than expected).

Fields of papers citing papers by John Tolle

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Tolle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Tolle. The network helps show where John Tolle may publish in the future.

Co-authorship network of co-authors of John Tolle

This figure shows the co-authorship network connecting the top 25 collaborators of John Tolle. A scholar is included among the top collaborators of John Tolle based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John Tolle. John Tolle is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Stanchu, Hryhorii, Yuriy I. Mazur, Joe Margetis, et al.. (2020). X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures. Semiconductor Science and Technology. 35(7). 75009–75009. 14 indexed citations
2.
3.
Tran, Huong, Thach Pham, Joe Margetis, et al.. (2019). Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging. Conference on Lasers and Electro-Optics. 1 indexed citations
4.
Vohra, Anurag, Clément Porret, David Kohen, et al.. (2019). Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. Japanese Journal of Applied Physics. 58(SB). SBBA04–SBBA04. 11 indexed citations
5.
Stephenson, Ben, et al.. (2019). Empirical Links Between Sub-Surface Drivers and Engineering Levers for Hydraulic Fracture Treatments and the Implications for Well Performance. SPE Hydraulic Fracturing Technology Conference and Exhibition. 5 indexed citations
6.
Dou, Wei, Yiyin Zhou, Joe Margetis, et al.. (2018). Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 223%. Optics Letters. 43(19). 4558–4558. 60 indexed citations
7.
Grant, Perry C., Joe Margetis, Yiyin Zhou, et al.. (2018). Direct Bandgap Type-I GeSn Quantum Well toward Si-based Optoelectronics. Conference on Lasers and Electro-Optics. STh4I.4–STh4I.4. 1 indexed citations
8.
Margetis, Joe, Sattar Al-Kabi, Wei Du, et al.. (2017). Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K. ACS Photonics. 5(3). 827–833. 139 indexed citations
9.
Du, Wei, Seyed Amir Ghetmiri, Joe Margetis, et al.. (2017). Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure. Journal of Applied Physics. 122(12). 23 indexed citations
10.
Bhargava, Nupur, Joe Margetis, & John Tolle. (2017). As doping of Si–Ge–Sn epitaxial semiconductor materials on a commercial CVD reactor. Semiconductor Science and Technology. 32(9). 94003–94003. 6 indexed citations
11.
Al-Kabi, Sattar, Seyed Amir Ghetmiri, Joe Margetis, et al.. (2016). An optically pumped 2.5 μm GeSn laser on Si operating at 110 K. Applied Physics Letters. 109(17). 169 indexed citations
12.
Zhou, Yiyin, Wei Dou, Wei Du, et al.. (2016). Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications. Journal of Applied Physics. 120(2). 63 indexed citations
13.
Margetis, Joe, Aboozar Mosleh, Seyed Amir Ghetmiri, et al.. (2016). Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD epitaxy. Materials Science in Semiconductor Processing. 70. 38–43. 35 indexed citations
14.
Conley, Benjamin R., Joe Margetis, Wei Du, et al.. (2014). Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff. Applied Physics Letters. 105(22). 66 indexed citations
15.
Margetis, Joe, Seyed Amir Ghetmiri, Wei Du, et al.. (2014). Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System. ECS Meeting Abstracts. MA2014-02(35). 1830–1830. 1 indexed citations
16.
Xie, Junqi, A. V. G. Chizmeshya, John Tolle, et al.. (2010). Synthesis, Stability Range, and Fundamental Properties of Si−Ge−Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms. Chemistry of Materials. 22(12). 3779–3789. 60 indexed citations
17.
Tice, Jesse, Yanyan Fang, John Tolle, A. V. G. Chizmeshya, & John Kouvetakis. (2008). Synthesis and Fundamental Studies of Chlorinated Si−Ge Hydride Macromolecules for Strain Engineering and Selective-Area Epitaxial Applications. Chemistry of Materials. 20(13). 4374–4385. 5 indexed citations
18.
Tice, Jesse, A. V. G. Chizmeshya, Radek Roucka, et al.. (2007). ClnH6-nSiGe Compounds for CMOS Compatible Semiconductor Applications:  Synthesis and Fundamental Studies. Journal of the American Chemical Society. 129(25). 7950–7960. 8 indexed citations
19.
Tolle, John, Radek Roucka, A. V. G. Chizmeshya, et al.. (2006). Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon. Applied Physics Letters. 88(25). 28 indexed citations
20.
Tolle, John, Radek Roucka, A. V. G. Chizmeshya, et al.. (2002). Novel synthetic pathways to wide bandgap semiconductors in the Si–C–Al–N system. Solid State Sciences. 4(11-12). 1509–1519. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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