D. Mocuta

3.4k total citations
89 papers, 1.5k citations indexed

About

D. Mocuta is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, D. Mocuta has authored 89 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 15 papers in Biomedical Engineering. Recurrent topics in D. Mocuta's work include Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). D. Mocuta is often cited by papers focused on Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). D. Mocuta collaborates with scholars based in Belgium, United States and China. D. Mocuta's co-authors include Joachim Ahner, John T. Yates, Naoto Horiguchi, Nadine Collaert, Hans Mertens, Julien Ryckaert, A. Mocuta, R. D. Ramsier, Rogier Baert and Christopher J. Wilson and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Physical Review Letters and The Journal of Chemical Physics.

In The Last Decade

D. Mocuta

89 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Mocuta Belgium 22 1.3k 478 308 271 137 89 1.5k
Clarence J. Tracy United States 18 747 0.6× 325 0.7× 287 0.9× 170 0.6× 147 1.1× 52 957
G. Lippert Germany 26 1.4k 1.1× 619 1.3× 1.1k 3.6× 252 0.9× 165 1.2× 82 1.9k
Tomoaki Kawamura Japan 15 575 0.5× 279 0.6× 179 0.6× 231 0.9× 48 0.4× 83 825
B. Doris United States 19 1.3k 1.0× 323 0.7× 364 1.2× 310 1.1× 74 0.5× 63 1.5k
F.‐J. Tegude Germany 21 1.3k 1.0× 766 1.6× 410 1.3× 708 2.6× 150 1.1× 158 1.6k
Y. J. Mii United States 16 1.4k 1.1× 822 1.7× 413 1.3× 282 1.0× 98 0.7× 37 1.6k
Kentaro Shibahara Japan 18 964 0.8× 213 0.4× 225 0.7× 99 0.4× 150 1.1× 80 1.0k
Michael C. Smayling United States 15 526 0.4× 149 0.3× 130 0.4× 230 0.8× 42 0.3× 58 762
Hans Mertens Belgium 22 1.3k 1.0× 335 0.7× 551 1.8× 897 3.3× 536 3.9× 119 2.1k
Daniel Guidotti United States 18 705 0.6× 293 0.6× 119 0.4× 114 0.4× 65 0.5× 81 975

Countries citing papers authored by D. Mocuta

Since Specialization
Citations

This map shows the geographic impact of D. Mocuta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Mocuta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Mocuta more than expected).

Fields of papers citing papers by D. Mocuta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Mocuta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Mocuta. The network helps show where D. Mocuta may publish in the future.

Co-authorship network of co-authors of D. Mocuta

This figure shows the co-authorship network connecting the top 25 collaborators of D. Mocuta. A scholar is included among the top collaborators of D. Mocuta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Mocuta. D. Mocuta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Arimura, Hiroaki, Harold Dekkers, Lars‐Åke Ragnarsson, et al.. (2019). Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation. IEEE Transactions on Electron Devices. 66(12). 5387–5392. 4 indexed citations
2.
Li, Yida, A. Alian, Maheswari Sivan, et al.. (2019). A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications. APL Materials. 7(3). 16 indexed citations
3.
4.
Veloso, A., Philippe Matagne, Eddy Simoen, et al.. (2018). Junctionless versus inversion-mode lateral semiconductor nanowire transistors. Journal of Physics Condensed Matter. 30(38). 384002–384002. 27 indexed citations
5.
Ishikawa, Kenji, Kazuhiro Karahashi, Tatsuo Ishijima, et al.. (2018). Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?. Japanese Journal of Applied Physics. 57(6S2). 06JA01–06JA01. 75 indexed citations
6.
Ryckaert, Julien, P. Schuddinck, Pieter Weckx, et al.. (2018). The Complementary FET (CFET) for CMOS scaling beyond N3. 141–142. 147 indexed citations
7.
Arimura, Hiroaki, Geert Eneman, E. Capogreco, et al.. (2018). Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET. 21.2.1–21.2.4. 16 indexed citations
8.
Matagne, Philippe, Hiroaki Nakamura, Yoshiaki Kikuchi, et al.. (2018). DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM. 45–48. 3 indexed citations
9.
Ciofi, Ivan, Philippe Roussel, Victor Moroz, et al.. (2017). Modeling of Via Resistance for Advanced Technology Nodes. IEEE Transactions on Electron Devices. 64(5). 2306–2313. 50 indexed citations
10.
Schaekers, Marc, Hao Yu, Andriy Hikavyy, et al.. (2017). Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation. T214–T215. 27 indexed citations
11.
Yu, Hao, Marc Schaekers, Lin‐Lin Wang, et al.. (2017). TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe. IEEE Transactions on Electron Devices. 64(2). 500–506. 32 indexed citations
12.
Arimura, Hiroaki, Sonja Sioncke, Daire Cott, et al.. (2016). Si-passivated Ge nFET towards a reliable Ge CMOS. 1 indexed citations
13.
Bardon, M. Garcia, Yasser Sherazi, P. Schuddinck, et al.. (2016). Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires. 28.2.1–28.2.4. 53 indexed citations
14.
Loo, Roger, Andriy Hikavyy, Liesbeth Witters, et al.. (2016). Processing Technologies for Advanced Ge Devices. ECS Journal of Solid State Science and Technology. 6(1). P14–P20. 30 indexed citations
15.
Qiu, Yu, H. Bender, Olivier Richard, et al.. (2015). Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon. Scientific Reports. 5(1). 12692–12692. 25 indexed citations
16.
Cai, Ming, B. Greene, J. Strane, et al.. (2008). Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing. 17–18. 2 indexed citations
17.
Ahner, Joachim, et al.. (2000). Thermal excitation of rotation of the methyl group in chemisorbed acetate on Cu(110). The Journal of Chemical Physics. 112(7). 3351–3357. 11 indexed citations
18.
Ahner, Joachim, D. Mocuta, & John T. Yates. (1999). Momentum resolved electron stimulated desorption ion angular distribution, a new technique, probing the low frequency motion of adsorbed molecules on single crystal surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 2333–2338. 15 indexed citations
19.
Ahner, Joachim, D. Mocuta, R. D. Ramsier, & John T. Yates. (1997). Anisotropy in the lateral momentum of CO chemisorbed on Cu(110) studied by time-of-flight electron simulated desorption ion angular distribution. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 1548–1552. 5 indexed citations
20.
Mocuta, D., Joachim Ahner, & John T. Yates. (1997). Adsorption and electron-stimulated dissociation of ammonia on Cu(110): an ESDIAD study. Surface Science. 383(2-3). 299–307. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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