D. Mocuta

3.4k citations

89 papers · 1.5k indexed · h-index 22

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 52
- Advancements in Semiconductor Devices and Circuit Design 42
- Integrated Circuits and Semiconductor Failure Analysis 22
- Ferroelectric and Negative Capacitance Devices 15
Atomic and Molecular Physics, and Optics top 5%
- Advanced Chemical Physics Studies 15
- Semiconductor materials and interfaces 12
- Spectroscopy and Quantum Chemical Studies 7
Electronic, Optical and Magnetic Materials
Hardware and Architecture top 10%
Surfaces, Coatings and Films top 10%
Biomedical Engineering
- Nanowire Synthesis and Applications 11

Co-authors: Joachim Ahner John T. Yates Naoto Horiguchi Nadine Collaert Hans Mertens Julien Ryckaert A. Mocuta R. D. Ramsier
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices (6 papers)IEEE Electron Device Letters (5 papers)Surface Science (5 papers)
Partner nations: Belgium United States China

In The Last Decade

D. Mocuta

89 papers receiving 1.5k citations

Peers

Countries citing papers authored by D. Mocuta

Since Specialization

Citations

This map shows the geographic impact of D. Mocuta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Mocuta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Mocuta more than expected).

Fields of papers citing papers by D. Mocuta

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Mocuta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Mocuta. The network helps show where D. Mocuta may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Mocuta, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Mocuta Line = papers co-authored together D. Mocuta links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Record Gm_SAT/SS_SAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation IEEE Transactions on Electron Devices ·Hiroaki Arimura,Harold Dekkers,Lars‐Åke Ragnarsson,Jérôme Mitard,V. De Heyn,D. Mocuta,Nadine Collaert,Naoto Horiguchi,Daire Cott,G. Boccardi,Roger Loo,Kurt Wostyn,Liesbeth Witters,Thierry Conard,Samuel Suhard,Dennis H. van Dorp	2019	4
2	A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications APL Materials ·Yida Li,A. Alian,Maheswari Sivan,Li Huang,Kah‐Wee Ang,Dennis Lin,D. Mocuta,Nadine Collaert,Aaron Thean	2019	16
3	Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization R. Ritzenthaler,Hans Mertens,V. Peña,Trupti Guha,Adrian Chasin,Karine Kenis,K. Devriendt,G. Mannaert,Harold Dekkers,Aayushi Dangol,楠瀬幸男,R. Hurle,Todd Wilson,Iván Porras Piñeres,María Consuelo Iglesias Fernández,Jérôme Mitard,N. Yoshida,tarek abed alrahim,D. Mocuta,Naoto Horiguchi	2018	79
4	Junctionless versus inversion-mode lateral semiconductor nanowire transistors Journal of Physics Condensed Matter ·A. Veloso,Philippe Matagne,Eddy Simoen,B. Kaczer,Geert Eneman,Hans Mertens,Dmitry Yakimets,Bertrand Parvais,D. Mocuta	2018	27
5	Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom? Japanese Journal of Applied Physics ·Kenji Ishikawa,Kazuhiro Karahashi,Tatsuo Ishijima,Sung‐Il Cho,Simon D. Elliott,Dennis M. Hausmann,D. Mocuta,Daniela Bittencourt Blum,Keizo Kinoshita	2018	75
6	The Complementary FET (CFET) for CMOS scaling beyond N3 Julien Ryckaert,P. Schuddinck,Pieter Weckx,G. Bouche,Benjamin Vincent,N. C. Lopez,Yasser Sherazi,A. Mallik,Hans Mertens,S. Demuynck,Trong Huynh-Bao,A. Veloso,Naoto Horiguchi,A. Mocuta,D. Mocuta,Juergen Boemmels	2018	147
7	Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET Hiroaki Arimura,Geert Eneman,E. Capogreco,Van Der Sand,A. De Keersgieter,Paola Favia,Clément Porret,Andriy Hikavyy,Roger Loo,H. Bender,L.-Å. Ragnarsson,Jérôme Mitard,Nadine Collaert,D. Mocuta,Naoto Horiguchi	2018	16
8	DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM Philippe Matagne,Hiroaki Nakamura,易言,Yoshiaki Kikuchi,Trong Huynh-Bao,Zheng Tao,Nadezhda Sergeevna Abramova,K. Devriendt,Lars‐Åke Ragnarsson,Juergen Boemmels,A. Mallik,J Aniol-Kwiatkowska,Farid Sebaai,M. Olinic,N. Jourdan,Clément Porret,D. Mocuta,Yaojun Wei,F. Masuoka	2018	3
9	Modeling of Via Resistance for Advanced Technology Nodes IEEE Transactions on Electron Devices ·Ivan Ciofi,Philippe Roussel,Castrillón Restrepo,Victor Moroz,Carmen Garrido,Rogier Baert,Kristof Croes,Judith Marian Evans,K. Vandersmissen,Weimin Gao,Philippe Matagne,Mustafa Badaroglu,Christopher J. Wilson,D. Mocuta,Zsolt Tökei	2017	50
10	Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation Soham D. Dave,Marc Schaekers,Hao Yu,Ding Jianf,Andriy Hikavyy,L. Daté,C. D. Udechukwu,Hong Jeong,Jong-Suk 최종석Choi,Dr Shwetha B,A. J. Mayur,Javiera A. Carmona Jiménez,H. van Meer,Yu-Long Jiang,K. De Meyer,D. Mocuta,Naoto Horiguchi	2017	27
11	TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe IEEE Transactions on Electron Devices ·Hao Yu,Marc Schaekers,雍建英,Lin‐Lin Wang,Danil E. Petin,Naoto Horiguchi,Yu-Long Jiang,D. Mocuta,Nadine Collaert,K. De Meyer	2017	32
12	Si-passivated Ge nFET towards a reliable Ge CMOS Hiroaki Arimura,Sonja Sioncke,Daire Cott,Jérôme Mitard,Wendy Vanherle,Roger Loo,J. Franco,Thierry Conard,Paola Favia,H. Bender,Liesbeth Witters,Hans Mertens,L.-Å. Ragnarsson,G. Pourtois,Marc Heyns,A. Mocuta,Aaron Thean,D. Mocuta,Nadine Collaert	2016	1
13	Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires M. Garcia Bardon,Yasser Sherazi,P. Schuddinck,Doyoung Jang,Dmitry Yakimets,Peter Debacker,Rogier Baert,Hans Mertens,Mustafa Badaroglu,A. Mocuta,Naoto Horiguchi,D. Mocuta,Prasanth Raghavan,Julien Ryckaert,A. Spessot,Diederik Verkest,An Steegen	2016	53
14	Processing Technologies for Advanced Ge Devices ECS Journal of Solid State Science and Technology ·Roger Loo,Andriy Hikavyy,Liesbeth Witters,Andreas Schulze,Hiroaki Arimura,Daire Cott,Jérôme Mitard,Clément Porret,Hans Mertens,Paul Ryan,Céline Caumon,Kevin Matney,Matthew Wormington,Paola Favia,Olivier Richard,H. Bender,Aaron Thean,Naoto Horiguchi,D. Mocuta,Nadine Collaert	2016	30
15	Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon Scientific Reports ·Yu Qiu,H. Bender,Olivier Richard,易言,Els Van Besien,Carmen Concepción Hernández Hernández,Muriel de Potter de ten Broeck,D. Mocuta,Wilfried Vandervorst	2015	25
16	Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing Ming Cai,B. Greene,J. Strane,Michael Belyansky,Habib Langhar,D. Lee,H. van Meer,Samuel J. Clark,S. Luning,D. Mocuta,E. Maciejewski	2008	2
17	Thermal excitation of rotation of the methyl group in chemisorbed acetate on Cu(110) The Journal of Chemical Physics ·Chenguang Xiang,Joachim Ahner,D. Mocuta,S. Denev,John T. Yates	2000	11
18	Momentum resolved electron stimulated desorption ion angular distribution, a new technique, probing the low frequency motion of adsorbed molecules on single crystal surfaces Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Joachim Ahner,D. Mocuta,John T. Yates	1999	15
19	Anisotropy in the lateral momentum of CO chemisorbed on Cu(110) studied by time-of-flight electron simulated desorption ion angular distribution Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Joachim Ahner,D. Mocuta,R. D. Ramsier,John T. Yates	1997	5
20	Adsorption and electron-stimulated dissociation of ammonia on Cu(110): an ESDIAD study Surface Science ·D. Mocuta,Joachim Ahner,John T. Yates	1997	39

About D. Mocuta

D. Mocuta is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Catalysis and Condensed Matter Physics, having authored 89 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Integrated Circuits and Semiconductor Failure Analysis (22 papers), Ferroelectric and Negative Capacitance Devices (15 papers), Advanced Chemical Physics Studies (15 papers), Semiconductor materials and interfaces (12 papers), Nanowire Synthesis and Applications (11 papers) and Spectroscopy and Quantum Chemical Studies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (478 citations), Electronic, Optical and Magnetic Materials (137 citations), Hardware and Architecture (49 citations) and Surfaces, Coatings and Films (49 citations). D. Mocuta has collaborated with scholars based in Belgium, United States and China. Frequent co-authors include Joachim Ahner, John T. Yates, Naoto Horiguchi, Nadine Collaert, Hans Mertens, Julien Ryckaert, A. Mocuta, R. D. Ramsier, Rogier Baert and Christopher J. Wilson. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Surface Science, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and The Journal of Chemical Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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