Tibor Grasser

16.8k total citations · 4 hit papers
564 papers, 12.5k citations indexed

About

Tibor Grasser is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tibor Grasser has authored 564 papers receiving a total of 12.5k indexed citations (citations by other indexed papers that have themselves been cited), including 501 papers in Electrical and Electronic Engineering, 116 papers in Materials Chemistry and 80 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tibor Grasser's work include Semiconductor materials and devices (425 papers), Advancements in Semiconductor Devices and Circuit Design (402 papers) and Integrated Circuits and Semiconductor Failure Analysis (156 papers). Tibor Grasser is often cited by papers focused on Semiconductor materials and devices (425 papers), Advancements in Semiconductor Devices and Circuit Design (402 papers) and Integrated Circuits and Semiconductor Failure Analysis (156 papers). Tibor Grasser collaborates with scholars based in Austria, Belgium and Germany. Tibor Grasser's co-authors include B. Kaczer, H. Reisinger, Michael Waltl, Yu. Yu. Illarionov, Wolfgang Goes, Theresia Knobloch, J. Franco, G. Groeseneken, Michael Nelhiebel and Thomas Aichinger and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

Tibor Grasser

543 papers receiving 12.3k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Transistors based on two-dimensional materials for future integrated circuits

2021 650 citations Saptarshi Das, Amritanand Sebastian et al. Nature Electronics profile →
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

2011 407 citations Tibor Grasser Microelectronics Reliability profile →
Insulators for 2D nanoelectronics: the gap to bridge

2020 382 citations Yu. Yu. Illarionov, Theresia Knobloch et al. profile →
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

2021 268 citations Theresia Knobloch, Yu. Yu. Illarionov et al. Nature Electronics profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
Tibor Grasser	10.9k	3.5k	1.0k	772	368	564	12.5k
G. Ghibaudo	11.3k 1.0×	1.7k 0.5×	1.1k 1.1×	1.5k 1.9×	316 0.9×	742	11.8k
Alberto Valdes‐Garcia	5.4k 0.5×	3.6k 1.0×	1.2k 1.2×	2.0k 2.6×	700 1.9×	116	7.8k
H.E. Maes	7.8k 0.7×	1.6k 0.5×	1.1k 1.1×	969 1.3×	400 1.1×	292	8.5k
R. Degraeve	10.9k 1.0×	2.4k 0.7×	593 0.6×	252 0.3×	538 1.5×	441	11.2k
Giuseppe Iannaccone	5.7k 0.5×	5.2k 1.5×	1.8k 1.8×	2.4k 3.1×	528 1.4×	308	9.3k
Yuan Taur	9.5k 0.9×	1.1k 0.3×	1.1k 1.1×	1.5k 2.0×	139 0.4×	169	10.0k
S.S. Wong	7.9k 0.7×	2.1k 0.6×	882 0.9×	1.5k 1.9×	884 2.4×	268	9.6k
P. M. Solomon	6.0k 0.6×	1.6k 0.5×	2.4k 2.3×	1.3k 1.6×	205 0.6×	180	7.5k
Eddy Simoen	9.1k 0.8×	1.1k 0.3×	2.2k 2.1×	1.1k 1.4×	210 0.6×	971	9.6k
D.J. Frank	6.1k 0.6×	1.3k 0.4×	1.6k 1.5×	1.1k 1.4×	230 0.6×	146	7.6k

Countries citing papers authored by Tibor Grasser

Since Specialization

Citations

This map shows the geographic impact of Tibor Grasser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tibor Grasser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tibor Grasser more than expected).

Fields of papers citing papers by Tibor Grasser

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tibor Grasser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tibor Grasser. The network helps show where Tibor Grasser may publish in the future.

Co-authorship network of co-authors of Tibor Grasser

This figure shows the co-authorship network connecting the top 25 collaborators of Tibor Grasser. A scholar is included among the top collaborators of Tibor Grasser based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tibor Grasser. Tibor Grasser is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Karl, Alexander, et al.. (2025). Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS2 FETs. Microelectronic Engineering. 299. 112333–112333. 2 indexed citations

Cerdeira, A., et al.. (2024). Analysis of the mobility behavior of MOS2 2D FETs. Solid-State Electronics. 224. 109032–109032.

Pham, Lam, et al.. (2024). Neural Network with Optical Frequency-Coded ReLU. Zenodo (CERN European Organization for Nuclear Research). M4C.2–M4C.2. 2 indexed citations

Yang, Jun, Theresia Knobloch, Jinho Ko, et al.. (2024). Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors. 4. 1–2. 1 indexed citations

Grasser, Tibor, H. Reisinger, Dominic Waldhoer, et al.. (2024). A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. 3B.1–1. 2 indexed citations

Grasser, Tibor, et al.. (2024). A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes. IEEE Transactions on Device and Materials Reliability. 24(2). 161–167. 3 indexed citations

Grill, Alexander, J. Diaz-Fortuny, E. Bury, et al.. (2023). A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays. 1–3. 8 indexed citations

Waldhoer, Dominic, Christian Schleich, Alexander Grill, et al.. (2023). Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. Microelectronics Reliability. 146. 115004–115004. 18 indexed citations

Schleich, Christian, et al.. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory. IEEE Transactions on Electron Devices. 69(8). 4479–4485. 12 indexed citations

10.

Jech, Markus, Alexander Grill, G. Rzepa, et al.. (2022). TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs. IEEE Transactions on Electron Devices. 69(6). 3290–3295. 2 indexed citations

11.

Jech, Markus, et al.. (2021). Applicability of Shockley–Read–Hall Theory for Interface States. IEEE Transactions on Electron Devices. 68(4). 2092–2097. 15 indexed citations

12.

Pobegen, Gregor, et al.. (2021). Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs. IEEE Transactions on Electron Devices. 68(4). 1804–1809. 6 indexed citations

13.

Das, Saptarshi, Amritanand Sebastian, Eric Pop, et al.. (2021). Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics. 4(11). 786–799. 650 indexed citations breakdown →

14.

Grill, Alexander, Dominic Waldhoer, Wolfgang Goes, et al.. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory. IEEE Transactions on Electron Devices. 68(12). 6365–6371. 12 indexed citations

15.

Puschkarsky, Katja, et al.. (2019). Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques. IEEE Transactions on Device and Materials Reliability. 19(2). 358–362. 7 indexed citations

16.

Pobegen, Gregor, et al.. (2019). Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs. IEEE Transactions on Device and Materials Reliability. 19(1). 133–139. 3 indexed citations

17.

Puschkarsky, Katja, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, & H. Reisinger. (2019). Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability. IEEE Transactions on Electron Devices. 66(11). 4604–4616. 147 indexed citations

18.

Jech, Markus, G. Rzepa, Stanislav Tyaginov, et al.. (2018). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part II: Theory. IEEE Transactions on Electron Devices. 66(1). 241–248. 24 indexed citations

19.

Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High-k SiGe Transistors–Part II: Theory. IEEE Transactions on Electron Devices. 64(5). 2099–2105. 13 indexed citations

20.

Grasser, Tibor, K. Rott, H. Reisinger, et al.. (2014). A unified perspective of RTN and BTI. 4A.5.1–4A.5.7. 75 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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