Tibor Grasser

16.8k total citations · 4 hit papers
564 papers, 12.5k citations indexed

About

Tibor Grasser is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tibor Grasser has authored 564 papers receiving a total of 12.5k indexed citations (citations by other indexed papers that have themselves been cited), including 501 papers in Electrical and Electronic Engineering, 116 papers in Materials Chemistry and 80 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tibor Grasser's work include Semiconductor materials and devices (425 papers), Advancements in Semiconductor Devices and Circuit Design (402 papers) and Integrated Circuits and Semiconductor Failure Analysis (156 papers). Tibor Grasser is often cited by papers focused on Semiconductor materials and devices (425 papers), Advancements in Semiconductor Devices and Circuit Design (402 papers) and Integrated Circuits and Semiconductor Failure Analysis (156 papers). Tibor Grasser collaborates with scholars based in Austria, Belgium and Germany. Tibor Grasser's co-authors include B. Kaczer, H. Reisinger, Michael Waltl, Yu. Yu. Illarionov, Wolfgang Goes, Theresia Knobloch, J. Franco, G. Groeseneken, Michael Nelhiebel and Thomas Aichinger and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

Tibor Grasser

543 papers receiving 12.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Transistors based on two-dimensional materials for future integrated circuits

2021 650 citations Saptarshi Das, Amritanand Sebastian et al. Nature Electronics profile →
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

2011 407 citations Tibor Grasser profile →
Insulators for 2D nanoelectronics: the gap to bridge

2020 382 citations Yu. Yu. Illarionov, Theresia Knobloch et al. profile →
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

2021 268 citations Theresia Knobloch, Yu. Yu. Illarionov et al. Nature Electronics profile →

Peers

Countries citing papers authored by Tibor Grasser

Since Specialization

Citations

This map shows the geographic impact of Tibor Grasser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tibor Grasser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tibor Grasser more than expected).

Fields of papers citing papers by Tibor Grasser

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tibor Grasser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tibor Grasser. The network helps show where Tibor Grasser may publish in the future.

Co-authorship network of co-authors of Tibor Grasser

This figure shows the co-authorship network connecting the top 25 collaborators of Tibor Grasser. A scholar is included among the top collaborators of Tibor Grasser based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tibor Grasser. Tibor Grasser is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS2 FETs 2025 ·Microelectronic Engineering ·(unknown), (unknown), Alexander Karl, (unknown), Theresia Knobloch, (unknown), (unknown), (unknown), Tibor Grasser	2
2	Enhanced Nanoscale Ge Concentration Oscillations in Si/SiGe Quantum Well through Controlled Segregation 2025 ·Nano Letters ·(unknown), (unknown), (unknown), Sebastian Koelling, (unknown), Yujia Liu, (unknown), Tibor Grasser, Yann‐Michel Niquet, M. Albrecht, Carsten Richter, Oussama Moutanabbir, Jens Martin	1
3	Analysis of the mobility behavior of MOS2 2D FETs 2024 ·Solid-State Electronics ·A. Cerdeira, (unknown), (unknown), Tibor Grasser, Benjamı́n Iñı́guez	0
4	Neural Network with Optical Frequency-Coded ReLU 2024 ·Zenodo (CERN European Organization for Nuclear Research) ·(unknown), Lam Pham, Alexander Schindler, Michael Waltl, Tibor Grasser, Bernhard Schrenk	2
5	Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors 2024 ·Jun Yang, (unknown), Theresia Knobloch, Jinho Ko, Ze Zhang, Andrew J. Mannix, Krishna C. Saraswat, Tibor Grasser, Max C. Lemme, Eric Pop	1
6	A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs 2024 ·Tibor Grasser, (unknown), (unknown), H. Reisinger, (unknown), Dominic Waldhoer, А. Н. Васильев, Michael Waltl, Thomas Aichinger, Michel Bockstedte, Wolfgang Gustin, Gregor Pobegen	2
7	A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes 2024 ·IEEE Transactions on Device and Materials Reliability ·(unknown), (unknown), (unknown), Tibor Grasser, Michael Waltl	3
8	A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays 2023 ·Alexander Grill, (unknown), J. Diaz-Fortuny, (unknown), E. Bury, Adrian Chasin, Tibor Grasser, Michael Waltl, B. Kaczer, Kristiaan De Greve	8
9	Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors 2023 ·Communications Engineering ·Maximilian W. Feil, H. Reisinger, (unknown), Thomas Aichinger, Christian Schleich, (unknown), (unknown), Michael Waltl, Wolfgang Gustin, Tibor Grasser	9
10	Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning 2022 ·Nature Electronics ·Theresia Knobloch, Burkay Uzlu, Yu. Yu. Illarionov, Zhenxing Wang, Martin Otto, Lado Filipovic, Michael Waltl, Daniel Neumaier, Max C. Lemme, Tibor Grasser	93
11	Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons 2022 ·IEEE Transactions on Electron Devices ·Christian Schleich, (unknown), Al-Moatasem El-Sayed, (unknown), B. Kaczer, Tibor Grasser, Michael Waltl	13
12	Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies 2021 ·IEEE Transactions on Electron Devices ·Christian Schleich, Dominic Waldhoer, (unknown), Maximilian W. Feil, H. Reisinger, Tibor Grasser, Michael Waltl	26
13	Transistors based on two-dimensional materials for future integrated circuits breakdown → 2021 ·Nature Electronics ·Saptarshi Das, Amritanand Sebastian, Eric Pop, Connor J. McClellan, Aaron D. Franklin, Tibor Grasser, Theresia Knobloch, Yu. Yu. Illarionov, Ashish Verma Penumatcha, Joerg Appenzeller, Zhihong Chen, Wenjuan Zhu, Inge Asselberghs, Lain‐Jong Li, Uygar E. Avci, Navakanta Bhat, Thomas D. Anthopoulos, Rajendra Singh	650
14	Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory 2021 ·IEEE Transactions on Electron Devices ·(unknown), Alexander Grill, Dominic Waldhoer, Wolfgang Goes, B. Kaczer, Dimitri Linten, Bertrand Parvais, B. Govoreanu, Iuliana Radu, Michael Waltl, Tibor Grasser	12
15	Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices 2021 ·Physical Review Applied ·Markus Jech, Al-Moatasem El-Sayed, Stanislav Tyaginov, (unknown), Foudhil Bouakline, Peter Saalfrank, (unknown), Christoph Jungemann, Michael Waltl, Tibor Grasser	6
16	Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric 2019 ·IEEE Journal of the Electron Devices Society ·(unknown), Yu. Yu. Illarionov, (unknown), Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu	6
17	An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps 2019 ·IEEE Transactions on Electron Devices ·Katja Puschkarsky, H. Reisinger, (unknown), Christian Schlünder, Wolfgang Gustin, Tibor Grasser	9
18	Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques 2019 ·IEEE Transactions on Device and Materials Reliability ·(unknown), Katja Puschkarsky, Michael Waltl, H. Reisinger, Tibor Grasser	7
19	Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs 2019 ·IEEE Transactions on Device and Materials Reliability ·(unknown), Gregor Pobegen, (unknown), (unknown), Tibor Grasser	3
20	A unified perspective of RTN and BTI 2014 ·Tibor Grasser, K. Rott, H. Reisinger, Michael Waltl, J. Franco, B. Kaczer	75

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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