Benjamin Vincent

2.3k total citations
87 papers, 1.5k citations indexed

About

Benjamin Vincent is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Benjamin Vincent has authored 87 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 78 papers in Electrical and Electronic Engineering, 29 papers in Biomedical Engineering and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Benjamin Vincent's work include Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Photonic and Optical Devices (27 papers). Benjamin Vincent is often cited by papers focused on Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Photonic and Optical Devices (27 papers). Benjamin Vincent collaborates with scholars based in Belgium, France and United States. Benjamin Vincent's co-authors include Roger Loo, Federica Gencarelli, Matty Caymax, Wilfried Vandervorst, Marc Heyns, Yosuke Shimura, H. Bender, Juergen Boemmels, L. Clavelier and Julien Ryckaert and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Benjamin Vincent

80 papers receiving 1.5k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Benjamin Vincent 1.4k 473 436 212 36 87 1.5k
Hung-Hsiang Cheng 1.3k 0.9× 691 1.5× 328 0.8× 206 1.0× 65 1.8× 87 1.4k
C.H. Diaz 2.1k 1.5× 235 0.5× 332 0.8× 192 0.9× 30 0.8× 109 2.2k
Geert Eneman 3.1k 2.2× 509 1.1× 810 1.9× 283 1.3× 20 0.6× 225 3.2k
Srikanth Samavedam 1.3k 1.0× 714 1.5× 361 0.8× 289 1.4× 10 0.3× 42 1.5k
Jeroen De Coster 1.5k 1.1× 636 1.3× 380 0.9× 105 0.5× 143 4.0× 100 1.6k
Digh Hisamoto 3.0k 2.1× 297 0.6× 575 1.3× 366 1.7× 30 0.8× 85 3.1k
B. Prévitali 1.4k 1.0× 175 0.4× 320 0.7× 148 0.7× 18 0.5× 81 1.4k
M. Cassé 2.0k 1.4× 289 0.6× 501 1.1× 151 0.7× 34 0.9× 178 2.1k
K. Asano 2.0k 1.5× 157 0.3× 390 0.9× 181 0.9× 13 0.4× 16 2.2k
Inna Kozinsky 517 0.4× 651 1.4× 189 0.4× 147 0.7× 27 0.8× 11 735

Countries citing papers authored by Benjamin Vincent

Since Specialization
Citations

This map shows the geographic impact of Benjamin Vincent's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benjamin Vincent with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benjamin Vincent more than expected).

Fields of papers citing papers by Benjamin Vincent

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benjamin Vincent. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benjamin Vincent. The network helps show where Benjamin Vincent may publish in the future.

Co-authorship network of co-authors of Benjamin Vincent

This figure shows the co-authorship network connecting the top 25 collaborators of Benjamin Vincent. A scholar is included among the top collaborators of Benjamin Vincent based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benjamin Vincent. Benjamin Vincent is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Kitae, et al.. (2025). Pathfinding for Molybdenum Hybrid Metallization. 1–3.
2.
3.
Optasanu, Virgil, Benjamin Vincent, Pascal Berger, et al.. (2024). The Influence of Si on the High-Temperature Oxidation of Near-alpha Titanium Alloys. SPIRE - Sciences Po Institutional REpository. 101(6). 1355–1367. 2 indexed citations
4.
Hargrove, M., et al.. (2023). Review of virtual wafer process modeling and metrology for advanced technology development. Journal of Micro/Nanopatterning Materials and Metrology. 22(3). 4 indexed citations
5.
6.
Vincent, Benjamin, M. Kamon, T. Schram, et al.. (2020). Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle. IEEE Transactions on Electron Devices. 67(12). 5374–5380. 11 indexed citations
7.
Vincent, Benjamin, et al.. (2020). Study of compressive behaviour on 3D printed ABS polymer lattice structures infilled with epoxy and polyester resins. IOP Conference Series Materials Science and Engineering. 923. 12044–12044. 5 indexed citations
8.
Ryckaert, Julien, P. Schuddinck, Pieter Weckx, et al.. (2018). The Complementary FET (CFET) for CMOS scaling beyond N3. 141–142. 147 indexed citations
9.
Afanas’ev, V. V., Michel Houssa, A. Stesmans, et al.. (2014). Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels. Applied Physics Letters. 104(20). 5 indexed citations
10.
Witters, Liesbeth, Geert Eneman, Jérôme Mitard, et al.. (2014). Integration aspects of strained Ge pFETs. Solid-State Electronics. 98. 7–11. 3 indexed citations
11.
Perumkunnil, Manu, et al.. (2013). Atomic insight into Ge1−xSnx using atom probe tomography. Ultramicroscopy. 132. 171–178. 10 indexed citations
12.
Vincent, Benjamin, Liesbeth Witters, Olivier Richard, et al.. (2013). Selective Growth of Strained Ge Channel on Relaxed SiGe Buffer in Shallow Trench Isolation for High Mobility Ge Planar and Fin p-FET. ECS Transactions. 50(9). 39–45. 20 indexed citations
13.
Witters, Liesbeth, Geert Eneman, Jérôme Mitard, et al.. (2013). Integration aspects of strained Ge pFETs. 50. 49–52. 1 indexed citations
14.
Gassenq, Alban, Federica Gencarelli, Joris Van Campenhout, et al.. (2012). GeSn/Ge heterostructure short-wave infrared photodetectors on silicon. Optics Express. 20(25). 27297–27297. 154 indexed citations
15.
Eneman, Geert, D.P. Brunco, Liesbeth Witters, et al.. (2012). Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond. 6.5.1–6.5.4. 29 indexed citations
16.
Eneman, Geert, A. De Keersgieter, Liesbeth Witters, et al.. (2012). Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel PFETS: A TCAD Study. 1 indexed citations
17.
Vincent, Benjamin, Federica Gencarelli, Laura Nyns, et al.. (2011). Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments. ECS Transactions. 41(7). 239–248. 9 indexed citations
18.
Vincent, Benjamin, Yosuke Shimura, Shotaro Takeuchi, et al.. (2010). Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors. Microelectronic Engineering. 88(4). 342–346. 91 indexed citations
19.
Damlencourt, Jean‐François, Benjamin Vincent, L. Clavelier, et al.. (2009). Morphological and Electrical Comparison of GeOI Enriched Structures Obtained from SOI and sSOI Substrates. ECS Transactions. 19(4). 93–98. 2 indexed citations
20.
Clavelier, L., C. Le Royer, Benjamin Vincent, et al.. (2007). High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers. 83. 19–20. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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