Matty Caymax

11.4k total citations
457 papers, 8.9k citations indexed

About

Matty Caymax is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Matty Caymax has authored 457 papers receiving a total of 8.9k indexed citations (citations by other indexed papers that have themselves been cited), including 424 papers in Electrical and Electronic Engineering, 155 papers in Atomic and Molecular Physics, and Optics and 128 papers in Materials Chemistry. Recurrent topics in Matty Caymax's work include Semiconductor materials and devices (308 papers), Advancements in Semiconductor Devices and Circuit Design (162 papers) and Silicon and Solar Cell Technologies (98 papers). Matty Caymax is often cited by papers focused on Semiconductor materials and devices (308 papers), Advancements in Semiconductor Devices and Circuit Design (162 papers) and Silicon and Solar Cell Technologies (98 papers). Matty Caymax collaborates with scholars based in Belgium, United States and Germany. Matty Caymax's co-authors include Marc Heyns, Marc Meuris, Roger Loo, Annelies Delabie, Wilfried Vandervorst, Michel Houssa, Thierry Conard, Guy Brammertz, H. Bender and Sven Van Elshocht and has published in prestigious journals such as The Journal of Chemical Physics, Nano Letters and ACS Nano.

In The Last Decade

Matty Caymax

442 papers receiving 8.6k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Matty Caymax 8.1k 3.6k 2.7k 1.6k 512 457 8.9k
Akira Toriumi 11.7k 1.4× 4.7k 1.3× 2.6k 1.0× 1.5k 0.9× 645 1.3× 464 12.7k
Giovanni Isella 4.7k 0.6× 2.0k 0.6× 3.6k 1.3× 1.7k 1.1× 339 0.7× 340 6.1k
K. V. Emtsev 2.8k 0.3× 5.7k 1.6× 2.2k 0.8× 1.4k 0.9× 526 1.0× 59 6.6k
J. B. Hannon 2.6k 0.3× 3.6k 1.0× 1.7k 0.6× 2.0k 1.3× 442 0.9× 84 5.7k
J. Weber 3.6k 0.4× 3.1k 0.9× 1.5k 0.5× 1.2k 0.7× 370 0.7× 156 4.7k
M. C. Reuter 3.9k 0.5× 2.7k 0.7× 3.0k 1.1× 2.8k 1.8× 387 0.8× 75 6.5k
M. Luysberg 3.3k 0.4× 2.7k 0.7× 1.8k 0.6× 791 0.5× 586 1.1× 162 4.9k
Taisuke Ohta 3.2k 0.4× 7.9k 2.2× 3.3k 1.2× 1.7k 1.1× 783 1.5× 78 8.7k
P. Zaumseil 3.6k 0.4× 2.0k 0.6× 1.7k 0.6× 967 0.6× 393 0.8× 267 4.8k
Shigeaki Zaima 4.0k 0.5× 1.9k 0.5× 2.1k 0.8× 1.0k 0.7× 355 0.7× 385 5.2k

Countries citing papers authored by Matty Caymax

Since Specialization
Citations

This map shows the geographic impact of Matty Caymax's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matty Caymax with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matty Caymax more than expected).

Fields of papers citing papers by Matty Caymax

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matty Caymax. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matty Caymax. The network helps show where Matty Caymax may publish in the future.

Co-authorship network of co-authors of Matty Caymax

This figure shows the co-authorship network connecting the top 25 collaborators of Matty Caymax. A scholar is included among the top collaborators of Matty Caymax based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matty Caymax. Matty Caymax is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hantschel, Thomas, et al.. (2021). Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM. Micron. 150. 103123–103123. 4 indexed citations
2.
Shi, Yuanyuan, Benjamin Groven, Xiangyu Wu, et al.. (2021). Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics. ACS Nano. 15(6). 9482–9494. 38 indexed citations
3.
Mehta, Ankit Nalin, Geoffrey Pourtois, Benjamin Groven, et al.. (2020). Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice. The Journal of Physical Chemistry C. 124(11). 6472–6478. 19 indexed citations
4.
Groven, Benjamin, Ankit Nalin Mehta, H. Bender, et al.. (2019). Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature. The Journal of Chemical Physics. 150(10). 104703–104703. 11 indexed citations
5.
Hantschel, Thomas, Andreas Schulze, T. Vystavěl, et al.. (2019). Enhancing the defect contrast in ECCI through angular filtering of BSEs. Ultramicroscopy. 210. 112922–112922. 5 indexed citations
6.
Mehta, Ankit Nalin, Haodong Zhang, Olivier Richard, et al.. (2017). Structural characterization of SnS crystals formed by chemical vapour deposition. Journal of Microscopy. 268(3). 276–287. 18 indexed citations
7.
Chiappe, Daniele, Massimo Mongillo, Inge Asselberghs, et al.. (2016). Demonstration of Direction Dependent Conduction through MoS2Films Prepared by Tunable Mass Transport Fabrication. ECS Journal of Solid State Science and Technology. 5(11). Q3046–Q3049. 5 indexed citations
8.
Heyne, Markus, Jean‐François de Marneffe, Annelies Delabie, et al.. (2016). Two-dimensional WS2nanoribbon deposition by conversion of pre-patterned amorphous silicon. Nanotechnology. 28(4). 04LT01–04LT01. 19 indexed citations
9.
Vincent, Benjamin, Federica Gencarelli, Laura Nyns, et al.. (2011). Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments. ECS Transactions. 41(7). 239–248. 9 indexed citations
10.
Delabie, Annelies, Matty Caymax, Jan Willem Maes, et al.. (2010). Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N[sub 2]/O[sub 2] Supply Ratio in Ozone Generation. Electrochemical and Solid-State Letters. 13(6). H176–H176. 15 indexed citations
11.
Wang, Gang, Ngoc Duy Nguyen, Maarten Leys, et al.. (2010). Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates. ECS Transactions. 27(1). 959–964. 11 indexed citations
12.
Delabie, Annelies, Florence Bellenger, Matty Caymax, et al.. (2009). H2O- and O3-Based Atomic Layer Deposition of High-K Dielectric Films on GeO2 Passivation Layers. Journal of The Electrochemical Society. 156(10). 1 indexed citations
13.
Eneman, Geert, Rui Yang, Brice De Jaeger, et al.. (2009). P+/n junction leakage in thin selectively grown Ge-in-STI substrates. Thin Solid Films. 518(9). 2489–2492. 11 indexed citations
14.
Nguyen, Ngoc Duy, Frederik Leys, Shotaro Takeuchi, et al.. (2008). Conformal ultra shallow junctions by vapor phase doping with boron. Open Repository and Bibliography (University of Liège). 1 indexed citations
15.
Mitard, Jérôme, Michel Houssa, Geert Eneman, et al.. (2006). Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. Symposium on VLSI Technology. 82–83. 35 indexed citations
16.
Loo, Roger, et al.. (2003). Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth. Applied Surface Science. 224(1-4). 292–296. 6 indexed citations
17.
Decoutere, Stefaan, et al.. (1999). A 0.35um BiCMOS Process with Selective Epitaxial SiGe Bipolar Transistors. European Solid-State Device Research Conference. 1. 436–439.
18.
Meer, H. van, et al.. (1999). High performance raised Gate/Source/Drain transistors for sub-0.15 um CMOS technologies. European Solid-State Device Research Conference. 1. 388–391. 2 indexed citations
19.
Waite, A.M., et al.. (1998). A Novel Deep Submicron Elevated Source/Drain MOSFET. ePrints Soton (University of Southampton). 2 indexed citations
20.
Poortmans, J., et al.. (1997). The role of hydrogen passivation in 20 μM thin-film solar cells on P-multicrystalline-Si substrates.. 728–731. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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