Naoto Horiguchi

6.8k total citations
393 papers, 3.8k citations indexed

About

Naoto Horiguchi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Naoto Horiguchi has authored 393 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 370 papers in Electrical and Electronic Engineering, 72 papers in Atomic and Molecular Physics, and Optics and 40 papers in Biomedical Engineering. Recurrent topics in Naoto Horiguchi's work include Semiconductor materials and devices (323 papers), Advancements in Semiconductor Devices and Circuit Design (277 papers) and Integrated Circuits and Semiconductor Failure Analysis (150 papers). Naoto Horiguchi is often cited by papers focused on Semiconductor materials and devices (323 papers), Advancements in Semiconductor Devices and Circuit Design (277 papers) and Integrated Circuits and Semiconductor Failure Analysis (150 papers). Naoto Horiguchi collaborates with scholars based in Belgium, United States and Japan. Naoto Horiguchi's co-authors include Nadine Collaert, B. Kaczer, A. Veloso, J. Franco, R. Ritzenthaler, G. Groeseneken, Aaron Thean, Hans Mertens, T. Chiarella and T. Schram and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Naoto Horiguchi

347 papers receiving 3.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Naoto Horiguchi Belgium 31 3.5k 829 590 541 108 393 3.8k
Ken K. Chin United States 23 1.8k 0.5× 639 0.8× 435 0.7× 672 1.2× 62 0.6× 109 2.2k
Shichang Zou China 23 1.6k 0.5× 530 0.6× 209 0.4× 349 0.6× 146 1.4× 174 1.9k
S. Biesemans Belgium 28 2.4k 0.7× 736 0.9× 326 0.6× 278 0.5× 69 0.6× 171 2.5k
Mahmoud Rasras United States 29 2.1k 0.6× 838 1.0× 382 0.6× 468 0.9× 116 1.1× 150 2.5k
Akio Nishida Japan 25 1.3k 0.4× 332 0.4× 462 0.8× 613 1.1× 26 0.2× 115 1.8k
H. Reisinger Germany 31 4.1k 1.2× 448 0.5× 163 0.3× 552 1.0× 81 0.8× 136 4.3k
J.C.S. Woo United States 28 2.5k 0.7× 717 0.9× 314 0.5× 401 0.7× 59 0.5× 112 2.6k
T. Ghani United States 19 2.1k 0.6× 359 0.4× 447 0.8× 481 0.9× 110 1.0× 33 2.3k
Jean‐Luc Autran France 27 2.7k 0.8× 284 0.3× 208 0.4× 700 1.3× 290 2.7× 174 3.0k
Akinobu Teramoto Japan 23 2.3k 0.6× 305 0.4× 297 0.5× 568 1.0× 412 3.8× 318 2.6k

Countries citing papers authored by Naoto Horiguchi

Since Specialization
Citations

This map shows the geographic impact of Naoto Horiguchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Naoto Horiguchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Naoto Horiguchi more than expected).

Fields of papers citing papers by Naoto Horiguchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Naoto Horiguchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Naoto Horiguchi. The network helps show where Naoto Horiguchi may publish in the future.

Co-authorship network of co-authors of Naoto Horiguchi

This figure shows the co-authorship network connecting the top 25 collaborators of Naoto Horiguchi. A scholar is included among the top collaborators of Naoto Horiguchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Naoto Horiguchi. Naoto Horiguchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Ritzenthaler, R., Pierre Eyben, Kiroubanand Sankaran, et al.. (2024). Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor. 1–4.
3.
Eyben, Pierre, A. De Keersgieter, Hans Mertens, et al.. (2024). Direct Extraction of Contact and S/D epi Access Resistance Components on 45nm Gate Pitch NS-Based n-FET Devices for the 2nm Node. Lirias (KU Leuven). 1–4.
4.
Rosseel, Erik, Clément Porret, Roger Loo, et al.. (2024). Source/Drain Epitaxy for Nanosheet-Based CFET Devices. ECS Transactions. 114(2). 29–36. 2 indexed citations
5.
Franco, J., Hiroaki Arimura, S. Brus, et al.. (2024). Impact of work function metal stacks on the performance and reliability of multi-V RMG CMOS technology. Solid-State Electronics. 216. 108929–108929. 1 indexed citations
6.
Eyben, Pierre, A. De Keersgieter, Philippe Matagne, et al.. (2024). Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs. Japanese Journal of Applied Physics. 63(4). 04SP03–04SP03. 1 indexed citations
7.
8.
Rosseel, Erik, Clément Porret, Andriy Hikavyy, et al.. (2022). Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices. ECS Transactions. 109(4). 93–98.
9.
Spessot, A., R. Ritzenthaler, E. Dentoni Litta, et al.. (2021). 80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications. Japanese Journal of Applied Physics. 60(SB). SBBB06–SBBB06. 7 indexed citations
10.
Franco, J., Jean‐François de Marneffe, A. Vandooren, et al.. (2021). Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO 2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic. Symposium on VLSI Technology. 1–2. 3 indexed citations
11.
Eneman, Geert, A. Veloso, Paola Favia, et al.. (2021). Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors. IEEE Transactions on Electron Devices. 68(11). 5380–5385. 7 indexed citations
12.
Simoen, Eddy, et al.. (2020). Impact of Dummy Gate Removal and a Silicon Cap on the Low-Frequency Noise Performance of Germanium nFinFETs. IEEE Transactions on Electron Devices. 67(11). 4713–4719. 8 indexed citations
13.
Eneman, Geert, A. Veloso, Paola Favia, et al.. (2020). (Invited) Stress Simulations of Fins, Wires, and Nanosheets. ECS Transactions. 98(5). 253–265. 11 indexed citations
14.
Arimura, Hiroaki, Kurt Wostyn, Lars‐Åke Ragnarsson, et al.. (2020). (Invited) Si-Cap-Free Low-DIT SiGe Gate Stack for High-Performance pFETs. ECS Transactions. 98(5). 377–386.
15.
Lorusso, Gian F., Naoto Horiguchi, J. Bömmels, et al.. (2019). Electron beam metrology for advanced technology nodes. Japanese Journal of Applied Physics. 58(SD). SD0801–SD0801. 6 indexed citations
16.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High-k SiGe Transistors–Part II: Theory. IEEE Transactions on Electron Devices. 64(5). 2099–2105. 13 indexed citations
17.
Waltl, Michael, G. Rzepa, Alexander Grill, et al.. (2017). Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental. IEEE Transactions on Electron Devices. 64(5). 2092–2098. 20 indexed citations
18.
Yu, Hao, Marc Schaekers, Geoffrey Pourtois, et al.. (2016). Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2. IEEE Transactions on Electron Devices. 63(12). 4632–4641. 47 indexed citations
19.
Franco, J., Subhadeep Mukhopadhyay, Pieter Weckx, et al.. (2016). Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. HAL (Le Centre pour la Communication Scientifique Directe). 15.3.1–15.3.4. 12 indexed citations
20.
Takao, Yoshihiro, et al.. (2003). Extended 90 nm CMOS technology with high manufacturability for high-performance, low-power, RF/analog applications. 39(1). 32–39. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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