P. Fazan

1.8k total citations
115 papers, 1.3k citations indexed

About

P. Fazan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, P. Fazan has authored 115 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 109 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in P. Fazan's work include Semiconductor materials and devices (98 papers), Advancements in Semiconductor Devices and Circuit Design (64 papers) and Ferroelectric and Negative Capacitance Devices (31 papers). P. Fazan is often cited by papers focused on Semiconductor materials and devices (98 papers), Advancements in Semiconductor Devices and Circuit Design (64 papers) and Ferroelectric and Negative Capacitance Devices (31 papers). P. Fazan collaborates with scholars based in United States, Switzerland and Belgium. P. Fazan's co-authors include S. Okhonin, M. Nagoga, Jean-Michel Sallèse, J.-M. Sallese, Matthias Bucher, F. Krummenacher, M. Dutoit, M. Ilegems, R. Ritzenthaler and A. Spessot and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

P. Fazan

112 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Fazan United States 17 1.2k 282 188 186 123 115 1.3k
Jenn‐Gwo Hwu Taiwan 18 1.3k 1.1× 350 1.2× 288 1.5× 158 0.8× 104 0.8× 218 1.4k
C. Mazuré France 17 1.0k 0.8× 296 1.0× 200 1.1× 220 1.2× 60 0.5× 98 1.2k
Michel Depas Belgium 13 1.6k 1.3× 399 1.4× 261 1.4× 88 0.5× 128 1.0× 27 1.6k
G. Kamarinos France 19 1.2k 1.0× 412 1.5× 244 1.3× 136 0.7× 53 0.4× 113 1.3k
T. Sugii Japan 21 1.3k 1.0× 139 0.5× 221 1.2× 102 0.5× 57 0.5× 116 1.3k
D. Lafond France 19 971 0.8× 219 0.8× 133 0.7× 161 0.9× 64 0.5× 71 1.1k
Mitsuo Okamoto Japan 20 1.0k 0.8× 131 0.5× 185 1.0× 72 0.4× 133 1.1× 114 1.2k
Hirohito Watanabe Japan 14 393 0.3× 255 0.9× 112 0.6× 129 0.7× 129 1.0× 44 584
L.T. Su United States 14 944 0.8× 225 0.8× 82 0.4× 119 0.6× 129 1.0× 31 1.1k
K.N. Bhat India 16 804 0.6× 164 0.6× 323 1.7× 202 1.1× 42 0.3× 110 915

Countries citing papers authored by P. Fazan

Since Specialization
Citations

This map shows the geographic impact of P. Fazan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Fazan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Fazan more than expected).

Fields of papers citing papers by P. Fazan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Fazan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Fazan. The network helps show where P. Fazan may publish in the future.

Co-authorship network of co-authors of P. Fazan

This figure shows the co-authorship network connecting the top 25 collaborators of P. Fazan. A scholar is included among the top collaborators of P. Fazan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Fazan. P. Fazan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bastos, João P. A., Barry O’Sullivan, J. Franco, et al.. (2022). Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. 1–6. 4 indexed citations
2.
Spessot, A., R. Ritzenthaler, E. Dentoni Litta, et al.. (2021). 80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications. Japanese Journal of Applied Physics. 60(SB). SBBB06–SBBB06. 7 indexed citations
3.
O’Sullivan, Barry, D. Linten, Naoto Horiguchi, et al.. (2019). Reliability Engineering Enabling Continued Logic for Memory Device Scaling. 1–11. 5 indexed citations
4.
Litta, E. Dentoni, R. Ritzenthaler, T. Schram, et al.. (2018). CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits. Japanese Journal of Applied Physics. 57(4S). 04FB08–04FB08. 4 indexed citations
5.
Simoen, Eddy, L. Pantisano, A. Rodrı́guez, et al.. (2012). Insights in low frequency noise of advanced and high-mobility channel transistors. 59. 28.7.1–28.7.4. 1 indexed citations
6.
Nagoga, M., S. Okhonin, & P. Fazan. (2004). Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique. Microelectronic Engineering. 72(1). 342–346. 1 indexed citations
7.
Blagojević, Marija, Marc Pastre, Maher Kayal, et al.. (2004). SOI capacitor-less 1-transistor DRAM sensing scheme with automatic reference generation. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 37. 182–183. 4 indexed citations
8.
Sallèse, Jean-Michel & P. Fazan. (2003). Switch and rf ferroelectric MEMS: a new concept. Sensors and Actuators A Physical. 109(3). 186–194. 6 indexed citations
9.
Fazan, P., S. Okhonin, M. Nagoga, et al.. (2002). Capacitor-Less 1-Transistor DRAM. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 10–13. 11 indexed citations
10.
Trupină, Lucian, J. Baborowski, Paul Muralt, et al.. (2002). Tungsten Based Electrodes for Stacked Capacitor Ferroelectric Memories. Japanese Journal of Applied Physics. 41(Part 1, No. 11B). 6862–6866.
11.
Bouvet, D., et al.. (2002). Impact of the colloidal silica particle size on physical vapor deposition tungsten removal rate and surface roughness. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1556–1560. 7 indexed citations
12.
Stolichnov, Igor, A. K. Tagantsev, N. Setter, et al.. (2001). Constant-current study of dielectric breakdown of Pb(Zr,Ti)O3 ferroelectric film capacitors. Integrated ferroelectrics. 32(1-4). 45–54. 5 indexed citations
13.
Fazan, P., et al.. (1995). Dry O2 Hgh Pressure Field Oxidation for 0.25 μm Isolation Technology. 1 indexed citations
14.
Patnaik, B.K., et al.. (1994). Thermal stability of thin poly-Si/Ta2O5/TiN capacitors for dynamic random access memory applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(4). 2822–2825. 3 indexed citations
15.
Itoh, Satoshi, et al.. (1993). Formation of high-quality oxide/nitride stacked layers on rugged polysilicon electrodes by rapid thermal oxidation. IEEE Transactions on Electron Devices. 40(6). 1176–1178. 2 indexed citations
16.
Hwang, Hyunsang, et al.. (1993). Furnace N2O oxidation process for submicron MOSFET device applications. Solid-State Electronics. 36(5). 749–751. 3 indexed citations
17.
Fazan, P., et al.. (1992). Ultra‐High Capacitance Nitride Films Utilizing Surface Passivation on Rugged Polysilicon. Journal of The Electrochemical Society. 139(12). 3678–3682. 3 indexed citations
18.
Lo, G. Q., et al.. (1992). Dynamic-stress-induced dielectric breakdown in ultrathin nitride/oxide stacked films deposited on rugged polysilicon. IEEE Electron Device Letters. 13(4). 183–185. 1 indexed citations
19.
Fazan, P., et al.. (1991). Oxide-nitride storage dielectrics on smooth and rough polycrystalline silicon layers. Applied Physics Letters. 59(3). 345–347. 7 indexed citations
20.
Fazan, P., M. Dutoit, & M. Ilegems. (1987). Nitridation of thin SiO2 films in N2 and NH3 plasmas. Applied Surface Science. 30(1-4). 224–228. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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