Geert Hellings

3.4k total citations
204 papers, 2.0k citations indexed

About

Geert Hellings is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Geert Hellings has authored 204 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 189 papers in Electrical and Electronic Engineering, 30 papers in Biomedical Engineering and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Geert Hellings's work include Semiconductor materials and devices (155 papers), Advancements in Semiconductor Devices and Circuit Design (131 papers) and Integrated Circuits and Semiconductor Failure Analysis (59 papers). Geert Hellings is often cited by papers focused on Semiconductor materials and devices (155 papers), Advancements in Semiconductor Devices and Circuit Design (131 papers) and Integrated Circuits and Semiconductor Failure Analysis (59 papers). Geert Hellings collaborates with scholars based in Belgium, United States and Austria. Geert Hellings's co-authors include Geert Eneman, K. De Meyer, Jérôme Mitard, Marc Meuris, Brice De Jaeger, D. Linten, Eddy Simoen, Dimitri Linten, B. Kaczer and G. Groeseneken and has published in prestigious journals such as Journal of Applied Physics, Nanoscale and IEEE Journal of Solid-State Circuits.

In The Last Decade

Geert Hellings

188 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Geert Hellings Belgium	22	1.8k	394	272	242	64	204	2.0k
Meishoku Masahara Japan	25	2.4k 1.4×	371 0.9×	200 0.7×	204 0.8×	18 0.3×	232	2.5k
Tsu-Jae King United States	23	2.5k 1.4×	449 1.1×	359 1.3×	335 1.4×	26 0.4×	48	2.6k
Digh Hisamoto Japan	20	3.0k 1.7×	575 1.5×	297 1.1×	366 1.5×	22 0.3×	85	3.1k
Naoto Horiguchi Belgium	31	3.5k 2.0×	590 1.5×	829 3.0×	541 2.2×	93 1.5×	393	3.8k
S. Deleonibus France	28	2.8k 1.6×	547 1.4×	430 1.6×	384 1.6×	26 0.4×	217	2.9k
A. Veloso Belgium	23	2.0k 1.2×	501 1.3×	557 2.0×	287 1.2×	17 0.3×	219	2.3k
S. Tiwari United States	20	2.0k 1.1×	371 0.9×	866 3.2×	714 3.0×	57 0.9×	92	2.2k
S. Biesemans Belgium	28	2.4k 1.4×	326 0.8×	736 2.7×	278 1.1×	25 0.4×	171	2.5k
H. Reisinger Germany	31	4.1k 2.3×	163 0.4×	448 1.6×	552 2.3×	23 0.4×	136	4.3k
Chenming Hu United States	22	1.9k 1.1×	254 0.6×	242 0.9×	260 1.1×	14 0.2×	64	2.0k

Countries citing papers authored by Geert Hellings

Since Specialization

Citations

This map shows the geographic impact of Geert Hellings's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Geert Hellings with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Geert Hellings more than expected).

Fields of papers citing papers by Geert Hellings

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Geert Hellings. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Geert Hellings. The network helps show where Geert Hellings may publish in the future.

Co-authorship network of co-authors of Geert Hellings

This figure shows the co-authorship network connecting the top 25 collaborators of Geert Hellings. A scholar is included among the top collaborators of Geert Hellings based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Geert Hellings. Geert Hellings is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Song, S. C., Halil Kükner, Sheng Yang, et al.. (2024). Backside Power Delivery in High Density and High Performance Context: IR-Drop and Block-Level Power-Performance-Area Benefits. 1–2. 3 indexed citations

Chen, Shih‐Hung, et al.. (2024). A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology. IEEE Journal of Solid-State Circuits. 60(2). 615–625.

Vermeersch, Bjorn, Halil Kükner, Gioele Mirabelli, et al.. (2024). Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5). 1–2. 2 indexed citations

Xiang, Yang, Mohit Gupta, Manu Perumkunnil, et al.. (2024). Design Space Exploration of FeRAM Bit Cell for DRAM Application. IEEE Transactions on Electron Devices. 71(9). 5380–5387. 5 indexed citations

Kükner, Halil, Gioele Mirabelli, Sheng Yang, et al.. (2024). High-density standard cell libraries with backside power options in A14 nanosheet node. 8–8. 1 indexed citations

Chen, Shih‐Hung, Geert Hellings, A. Veloso, et al.. (2024). Impact of Sub-μm Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era. IEEE Transactions on Electron Devices. 71(4). 2278–2283. 1 indexed citations

Hellings, Geert, et al.. (2023). Unraveling the impact of nano-scaling on silicon field-effect transistors for the detection of single-molecules. Nanoscale. 15(5). 2354–2368. 2 indexed citations

Schuddinck, P., Hans Mertens, Shairfe Muhammad Salahuddin, et al.. (2023). CFET SRAM With Double-Sided Interconnect Design and DTCO Benchmark. IEEE Transactions on Electron Devices. 70(10). 5099–5106. 8 indexed citations

Beckers, Arnout, Alexander Grill, B. Kaczer, et al.. (2023). Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing. IEEE Transactions on Nanotechnology. 22. 590–596. 9 indexed citations

10.

Hellings, Geert, Sheng Yang, Pieter Weckx, et al.. (2023). The evolution towards CMOS 2.0, a Heterogeneous Logic Platform.

11.

Schanovsky, F., et al.. (2021). The Significance of Nonlinear Screening and the pH Interference Mechanism in Field-Effect Transistor Molecular Sensors. ACS Sensors. 6(3). 1049–1056. 16 indexed citations

12.

Bois, Bert Du, Rita Vos, S. Severi, et al.. (2020). Size Independent Sensitivity to Biomolecular Surface Density Using Nanoscale CMOS Technology Transistors. IEEE Sensors Journal. 20(16). 8956–8964. 10 indexed citations

13.

Veloso, A., Zheng Tao, Geert Hellings, et al.. (2019). Size Independent pH Sensitivity for Ion Sensitive FinFETs Down to 10 nm Width. IEEE Sensors Journal. 19(16). 6578–6586. 9 indexed citations

14.

Linten, Dimitri, Geert Hellings, Shih‐Hung Chen, et al.. (2013). ESD performance of high mobility SiGe quantum well bulk finFET diodes and PMOS devices. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 4 indexed citations

15.

Scholz, Mirko, Shih‐Hung Chen, Geert Hellings, & Dimitri Linten. (2013). Impact of the on-chip and off-chip ESD protection network on transient-induced latch-up in CMOS IC. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 5 indexed citations

16.

Chen, Shih‐Hung, S. Thijs, Dimitri Linten, et al.. (2012). ESD protection devices placed inside keep-out zone (KOZ) of through Silicon Via (TSV) in 3D stacked integrated circuits. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 12 indexed citations

17.

Hellings, Geert, Dimitri Linten, S. Thijs, et al.. (2012). ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling. Electrical Overstress/Electrostatic Discharge Symposium. 1–6. 5 indexed citations

18.

Scholz, Mirko, Geert Hellings, D. Linten, et al.. (2012). Miscorrelation between IEC61000-4-2 type of HMM tester and 50 Ω HMM tester. Electrical Overstress/Electrostatic Discharge Symposium. 1–9. 2 indexed citations

19.

Hellings, Geert, Geert Eneman, Brice De Jaeger, et al.. (2009). Scalability of quantum well devices for digital logic applications. 33–34. 2 indexed citations

20.

Mitard, Jérôme, Michel Houssa, Geert Eneman, et al.. (2006). Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. Symposium on VLSI Technology. 82–83. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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