Roger Loo

10.0k total citations
505 papers, 7.0k citations indexed

About

Roger Loo is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Roger Loo has authored 505 papers receiving a total of 7.0k indexed citations (citations by other indexed papers that have themselves been cited), including 468 papers in Electrical and Electronic Engineering, 162 papers in Atomic and Molecular Physics, and Optics and 103 papers in Biomedical Engineering. Recurrent topics in Roger Loo's work include Semiconductor materials and devices (275 papers), Advancements in Semiconductor Devices and Circuit Design (226 papers) and Silicon and Solar Cell Technologies (124 papers). Roger Loo is often cited by papers focused on Semiconductor materials and devices (275 papers), Advancements in Semiconductor Devices and Circuit Design (226 papers) and Silicon and Solar Cell Technologies (124 papers). Roger Loo collaborates with scholars based in Belgium, United States and Germany. Roger Loo's co-authors include Matty Caymax, Wilfried Vandervorst, Daniel F. Sievenpiper, Marc Heyns, Gregory L. Tangonan, Yosuke Shimura, H. Bender, Andriy Hikavyy, James H. Schaffner and Geert Eneman and has published in prestigious journals such as Nano Letters, Physical review. B, Condensed matter and ACS Nano.

In The Last Decade

Roger Loo

464 papers receiving 6.7k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Roger Loo 6.1k 2.1k 1.7k 981 576 505 7.0k
Jamie Phillips 3.7k 0.6× 2.5k 1.2× 1.1k 0.6× 2.0k 2.0× 345 0.6× 202 4.8k
Albert Chin 8.2k 1.3× 2.1k 1.0× 855 0.5× 2.9k 2.9× 170 0.3× 495 8.8k
Navab Singh 5.1k 0.8× 2.6k 1.3× 3.6k 2.1× 1.4k 1.4× 571 1.0× 305 8.2k
Xiaogan Liang 3.0k 0.5× 1.2k 0.6× 3.2k 1.8× 2.8k 2.9× 349 0.6× 74 6.1k
Philippe Godignon 5.2k 0.8× 1.6k 0.8× 1.8k 1.0× 1.4k 1.5× 100 0.2× 344 7.1k
Luis Guillermo Villanueva 2.8k 0.5× 3.5k 1.7× 2.3k 1.3× 1.2k 1.2× 73 0.1× 171 5.4k
Xuetao Gan 4.3k 0.7× 3.3k 1.6× 2.5k 1.5× 2.5k 2.6× 204 0.4× 212 6.7k
Boris Desiatov 2.7k 0.4× 2.3k 1.1× 1.1k 0.6× 466 0.5× 113 0.2× 59 3.6k
Yasuo Takahashi 4.2k 0.7× 2.4k 1.2× 1.0k 0.6× 999 1.0× 45 0.1× 258 5.2k
Johann Osmond 3.1k 0.5× 1.8k 0.9× 2.7k 1.6× 2.7k 2.8× 156 0.3× 52 5.8k

Countries citing papers authored by Roger Loo

Since Specialization
Citations

This map shows the geographic impact of Roger Loo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Roger Loo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Roger Loo more than expected).

Fields of papers citing papers by Roger Loo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Roger Loo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Roger Loo. The network helps show where Roger Loo may publish in the future.

Co-authorship network of co-authors of Roger Loo

This figure shows the co-authorship network connecting the top 25 collaborators of Roger Loo. A scholar is included among the top collaborators of Roger Loo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Roger Loo. Roger Loo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Godfrin, Clément, Stefan Kubicek, Ruoyu Li, et al.. (2025). Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium. npj Quantum Information. 11(1). 3 indexed citations
2.
Yudistira, Didit, et al.. (2025). Design of a High-Speed Waveguide Ge/Si SACM Avalanche Photodiode. Journal of Lightwave Technology. 43(19). 9325–9332.
3.
Isella, Giovanni, Michele Virgilio, Roger Loo, Osamu Nakatsuka, & Giovanni Capellini. (2024). Preface: Advances in semiconductor materials, technology, and applications. Materials Science in Semiconductor Processing. 182. 108700–108700.
4.
Sebaai, Farid, et al.. (2024). Extreme silicon thinning for back side power delivery network: Si thinning stopping on scaled SiGe etch stop layer. Microelectronic Engineering. 294. 112246–112246.
5.
Pourtois, Geoffrey, et al.. (2024). Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si0.5Ge0.5(001)-2 × 1 Surfaces. The Journal of Physical Chemistry C. 128(30). 12437–12449.
6.
Cho, Jinyoun, Valérie Depauw, Bouraoui Ilahi, et al.. (2024). Overview of Engineered Germanium Substrate Development for Affordable Large-Volume Multijunction Solar Cells. IEEE Journal of Photovoltaics. 14(4). 623–628. 1 indexed citations
7.
Porret, Clément, Andriy Hikavyy, Erik Rosseel, et al.. (2022). B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts. ECS Journal of Solid State Science and Technology. 11(2). 24008–24008.
8.
Loo, Roger, Yumi Kawamura, Andriy Hikavyy, et al.. (2022). (Digital Presentation) Selective SiGe Vapor Etching Using Br2 in View of Nanosheet Device Isolation. ECS Transactions. 109(4). 135–140.
9.
Porret, Clément, Andriy Hikavyy, R. J. H. Morris, et al.. (2022). Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties. ECS Meeting Abstracts. MA2022-02(32). 1216–1216.
10.
Depauw, Valérie, Clément Porret, E. Vecchio, et al.. (2022). Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells. Progress in Photovoltaics Research and Applications. 31(12). 1315–1328. 11 indexed citations
11.
Eneman, Geert, A. Veloso, Paola Favia, et al.. (2021). Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors. IEEE Transactions on Electron Devices. 68(11). 5380–5385. 7 indexed citations
12.
Eneman, Geert, A. Veloso, Paola Favia, et al.. (2020). (Invited) Stress Simulations of Fins, Wires, and Nanosheets. ECS Meeting Abstracts. MA2020-02(24). 1737–1737. 1 indexed citations
13.
Vohra, Anurag, Clément Porret, David Kohen, et al.. (2019). Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. Japanese Journal of Applied Physics. 58(SB). SBBA04–SBBA04. 11 indexed citations
14.
Hikavyy, Andriy, Clément Porret, Erik Rosseel, Alexey Milenin, & Roger Loo. (2019). Application of Cl 2 for low temperature etch and epitaxy. Semiconductor Science and Technology. 34(7). 74003–74003. 2 indexed citations
15.
Porret, Clément, Anurag Vohra, Andriy Hikavyy, et al.. (2019). Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices. physica status solidi (a). 217(3). 4 indexed citations
16.
Arimura, Hiroaki, Harold Dekkers, Lars‐Åke Ragnarsson, et al.. (2019). Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation. IEEE Transactions on Electron Devices. 66(12). 5387–5392. 4 indexed citations
17.
Porret, Clément, Andriy Hikavyy, S. Baudot, et al.. (2019). Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. ECS Journal of Solid State Science and Technology. 8(8). P392–P399. 17 indexed citations
18.
Simoen, Eddy, Roger Loo, Yosuke Shimura, et al.. (2018). Electrical properties of extended defects in strain relaxed GeSn. Applied Physics Letters. 113(2). 22 indexed citations
19.
Claeys, Cor, Geert Eneman, Gang Wang, et al.. (2009). Defect Aspects of Ge-on-Si Materials and Devices. ECS Transactions. 22(1). 99–109. 3 indexed citations
20.
Nguyen, Ngoc Duy, Frederik Leys, Shotaro Takeuchi, et al.. (2008). Conformal ultra shallow junctions by vapor phase doping with boron. Open Repository and Bibliography (University of Liège). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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