T. Schram

4.1k total citations
180 papers, 2.5k citations indexed

About

T. Schram is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Schram has authored 180 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 165 papers in Electrical and Electronic Engineering, 29 papers in Materials Chemistry and 25 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Schram's work include Semiconductor materials and devices (148 papers), Advancements in Semiconductor Devices and Circuit Design (107 papers) and Integrated Circuits and Semiconductor Failure Analysis (58 papers). T. Schram is often cited by papers focused on Semiconductor materials and devices (148 papers), Advancements in Semiconductor Devices and Circuit Design (107 papers) and Integrated Circuits and Semiconductor Failure Analysis (58 papers). T. Schram collaborates with scholars based in Belgium, United States and South Korea. T. Schram's co-authors include Stefan De Gendt, L. Pantisano, Marc Heyns, G. Groeseneken, Herman Terryn, Naoto Horiguchi, Michel Houssa, R. Ritzenthaler, E. Cartier and L.-Å. Ragnarsson and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. Schram

175 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Schram Belgium 27 2.1k 828 425 189 188 180 2.5k
Feng Zhu United States 24 1.5k 0.7× 667 0.8× 411 1.0× 142 0.8× 114 0.6× 118 1.8k
Dieter Mergel Germany 20 1.1k 0.5× 1.2k 1.5× 238 0.6× 183 1.0× 224 1.2× 54 1.9k
Yong‐Duck Chung South Korea 22 1.3k 0.6× 1.0k 1.2× 336 0.8× 101 0.5× 106 0.6× 122 1.6k
Qi Xie China 19 1.3k 0.6× 808 1.0× 271 0.6× 141 0.7× 420 2.2× 66 1.6k
Koichi Wakita Japan 22 878 0.4× 690 0.8× 570 1.3× 325 1.7× 152 0.8× 88 1.4k
H.B. Harrison Australia 22 2.1k 1.0× 440 0.5× 722 1.7× 316 1.7× 323 1.7× 109 2.3k
S. Hernández Spain 22 1.1k 0.5× 948 1.1× 563 1.3× 513 2.7× 206 1.1× 106 1.7k
Yiping Wang United States 27 1.8k 0.9× 1.6k 1.9× 315 0.7× 205 1.1× 302 1.6× 80 2.6k
Chao Zhao Belgium 22 1.5k 0.7× 790 1.0× 306 0.7× 117 0.6× 228 1.2× 115 1.7k
Wei L. Wang United States 11 967 0.5× 901 1.1× 555 1.3× 170 0.9× 162 0.9× 13 1.6k

Countries citing papers authored by T. Schram

Since Specialization
Citations

This map shows the geographic impact of T. Schram's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Schram with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Schram more than expected).

Fields of papers citing papers by T. Schram

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Schram. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Schram. The network helps show where T. Schram may publish in the future.

Co-authorship network of co-authors of T. Schram

This figure shows the co-authorship network connecting the top 25 collaborators of T. Schram. A scholar is included among the top collaborators of T. Schram based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Schram. T. Schram is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nuytten, Thomas, Albert Minj, Stefanie Sergeant, et al.. (2025). Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence. Materials Science in Semiconductor Processing. 193. 109489–109489.
2.
Ghosh, Souvik, Quentin Smets, T. Schram, et al.. (2024). EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration. 1–2. 2 indexed citations
3.
Kaczer, B., Quentin Smets, Stanislav Tyaginov, et al.. (2024). Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs. npj 2D Materials and Applications. 8(1). 2 indexed citations
4.
5.
Kaczer, B., Quentin Smets, Devin Verreck, et al.. (2023). Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. Lirias (KU Leuven). 1–6. 2 indexed citations
6.
Schram, T., Surajit Sutar, Iuliana Radu, & Inge Asselberghs. (2022). Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits. Advanced Materials. 34(48). e2109796–e2109796. 50 indexed citations
7.
Smets, Quentin, Devin Verreck, T. Schram, et al.. (2022). Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. 1–2. 4 indexed citations
8.
Schram, T., Quentin Smets, D. Radisic, et al.. (2021). High yield and process uniformity for 300 mm integrated WS 2 FETs. Symposium on VLSI Technology. 1–2. 9 indexed citations
9.
Smets, Quentin, Goutham Arutchelvan, T. Schram, et al.. (2021). Extreme scaling enabled by MX2 transistors: variability challenges (invited). 1–2. 2 indexed citations
10.
Vincent, Benjamin, M. Kamon, T. Schram, et al.. (2020). Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle. IEEE Transactions on Electron Devices. 67(12). 5374–5380. 11 indexed citations
11.
12.
Afzalian, Aryan, T. Schram, Doyoung Jang, et al.. (2020). Introducing 2D-FETs in Device Scaling Roadmap using DTCO. 22.5.1–22.5.4. 33 indexed citations
13.
Litta, E. Dentoni, R. Ritzenthaler, T. Schram, et al.. (2018). CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits. Japanese Journal of Applied Physics. 57(4S). 04FB08–04FB08. 4 indexed citations
14.
Yu, Hao, Marc Schaekers, T. Schram, et al.. (2016). Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium. IEEE Electron Device Letters. 37(4). 482–485. 27 indexed citations
15.
Adelmann, Christoph, T. Schram, Soon Aik Chew, et al.. (2014). On the scalability of doped hafnia thin films. Applied Physics Letters. 104(12). 7 indexed citations
16.
Tielens, Hilde, Shinji Takeoka, Laura Nyns, et al.. (2011). TDEAH/TDEAZとH 2 Oを用いたALD HfZrO x の開発. Journal of The Electrochemical Society. 158(1). 69–74. 8 indexed citations
17.
Pantisano, L., T. Schram, Marc Heyns, et al.. (2006). Improving workfunction control of metal gate electrodes. Solid State Technology. 49(9). 45–46. 7 indexed citations
18.
Ortolland, C., L.-Å. Ragnarsson, Paola Favia, et al.. (2006). Optimized ultra-low thermal budget process flow for advanced High-K / Metal gate first CMOS using laser-annealing technology. Symposium on VLSI Technology. 38–39. 1 indexed citations
19.
Schram, T., et al.. (2003). Integrating high-k dielectrics: etched polysilicon or metal gates?. Solid State Technology. 46(6). 61–64. 5 indexed citations
20.
Laha, Priya, T. Schram, & Herman Terryn. (2002). Use of spectroscopic ellipsometry to study Zr/Ti films on Al. Surface and Interface Analysis. 34(1). 677–680. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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