Barry O’Sullivan

1.5k total citations
109 papers, 1.1k citations indexed

About

Barry O’Sullivan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Barry O’Sullivan has authored 109 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 107 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in Barry O’Sullivan's work include Semiconductor materials and devices (76 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Barry O’Sullivan is often cited by papers focused on Semiconductor materials and devices (76 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Barry O’Sullivan collaborates with scholars based in Belgium, Netherlands and France. Barry O’Sullivan's co-authors include B. Kaczer, D. Linten, Paul K. Hurley, Tibor Grasser, Ian W. Boyd, G. Rzepa, J.P. Sénateur, Michael Waltl, Jan Van Houdt and J. Franco and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Barry O’Sullivan

101 papers receiving 1.0k citations

Peers

Countries citing papers authored by Barry O’Sullivan

Since Specialization

Citations

This map shows the geographic impact of Barry O’Sullivan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Barry O’Sullivan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Barry O’Sullivan more than expected).

Fields of papers citing papers by Barry O’Sullivan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Barry O’Sullivan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Barry O’Sullivan. The network helps show where Barry O’Sullivan may publish in the future.

Co-authorship network of co-authors of Barry O’Sullivan

This figure shows the co-authorship network connecting the top 25 collaborators of Barry O’Sullivan. A scholar is included among the top collaborators of Barry O’Sullivan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Barry O’Sullivan. Barry O’Sullivan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress 2025 ·IEEE Transactions on Electron Devices ·Meng‐Che Tsai, (unknown), Hao Yu, (unknown), Yi Yang, (unknown), (unknown), (unknown), (unknown), Barry O’Sullivan, (unknown), (unknown), (unknown), A. Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian‐Li Wu	0
2	DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers 2024 ·Barry O’Sullivan, A. Alian, A. Sibaja-Hernandez, J. Franco, (unknown), H.Y. Yu, Amit Rathi, Uthayasankaran Peralagu, Adrian Chasin, Bertrand Parvais, Nadine Collaert	1
3	Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs 2024 ·IEEE Transactions on Electron Devices ·Hao Yu, (unknown), Barry O’Sullivan, (unknown), (unknown), (unknown), Tian‐Li Wu, (unknown), Sourish Banerjee, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert	0
4	A field-effect transistor-based room-temperature quantum current source 2023 ·Applied Physics Letters ·Kin P. Cheung, Barry O’Sullivan	0
5	Insights into Scaled Logic Devices Connected from Both Wafer Sides 2022 ·2022 International Electron Devices Meeting (IEDM) ·A. Veloso, Geert Eneman, (unknown), Bjorn Vermeersch, Anne Jourdain, (unknown), Barry O’Sullivan, (unknown), A. De Keersgieter, E. Simoen, D. Radisic, Yusuke Oniki, (unknown), S. Brus, Eric Beyne, E. Dentoni Litta, Naoto Horiguchi	4
6	Electron trapping in ferroelectric HfO2 2021 ·Physical Review Materials ·(unknown), Jack Strand, Luca Larcher, Barry O’Sullivan, Alexander L. Shluger, Valeri Afanas’ev	21
7	Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance 2021 ·N. Ronchi, Lars‐Åke Ragnarsson, L. Breuil, Kaustuv Banerjee, S. R. C. McMitchell, Barry O’Sullivan, Alexey Milenin, Shreya Kundu, Murat Pak, G. Van den bosch, Jan Van Houdt	2
8	80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications 2021 ·Japanese Journal of Applied Physics ·A. Spessot, R. Ritzenthaler, E. Dentoni Litta, Emmanuel Dupuy, Barry O’Sullivan, João P. A. Bastos, E. Capogreco, Kenichi Miyaguchi, Vladimir Machkaoutsan, (unknown), P. Fazan, Naoto Horiguchi	7
9	CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States 2021 ·Tibor Grasser, Barry O’Sullivan, B. Kaczer, J. Franco, Bernhard Stampfer, Michael Waltl	1
10	Defect profiling in FEFET Si:HfO2 layers 2020 ·Applied Physics Letters ·Barry O’Sullivan, V. Putcha, (unknown), V. V. Afanas’ev, Eddy Simoen, (unknown), Y. Higashi, R. Degraeve, (unknown), B. Kaczer, N. Ronchi, S. R. C. McMitchell, Kaustuv Banerjee, Sergiu Clima, L. Breuil, G. Van den bosch, D. Linten, Jan Van Houdt	25
11	CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits 2018 ·Japanese Journal of Applied Physics ·E. Dentoni Litta, R. Ritzenthaler, T. Schram, A. Spessot, Barry O’Sullivan, Vladimir Machkaoutsan, P. Fazan, (unknown), G. Mannaert, (unknown), Farid Sebaai, (unknown), Monique Ercken, S. Demuynck, Naoto Horiguchi	4
12	Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality 2018 ·ECS Journal of Solid State Science and Technology ·Cor Claeys, (unknown), Barry O’Sullivan, A. Veloso, Naoto Horiguchi, Nadine Collaert, Eddy Simoen	8
13	Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit 2018 ·S. Van Beek, (unknown), Barry O’Sullivan, R. Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar	9
14	Comphy — A compact-physics framework for unified modeling of BTI 2018 ·Microelectronics Reliability ·G. Rzepa, J. Franco, Barry O’Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Ph. Roussel, D. Linten, B. Kaczer, Tibor Grasser	158
15	Strategies for Ultra-Low Ag Consumption of Industrial n-Type Cells 2014 ·EU PVSEC ·L.J. Geerligs, M.W.P.E. Lamers, (unknown), (unknown), M. Dovrat, (unknown), (unknown), (unknown), Barry O’Sullivan, Maarten Debucquoy	1
16	n-Type Silicon Wafer Screening for IBC Solar Cells by Different Thermal Treatments 2013 ·EU PVSEC ·(unknown), Maarten Debucquoy, Kurt Wostyn, Emanuele Cornagliotti, Barry O’Sullivan, Niels Posthuma, J. Poortmans	2
17	Low-Temperature Emitter Passivation for Solar Cells Bonded to Glass 2013 ·EU PVSEC ·Twan Bearda, Barry O’Sullivan, S. Praveen Kumar, (unknown), (unknown), Hosni Meddeb, G. Beaucarne, Kris Baert, Ivan Gordon, Jef Poortmans	1
18	Passivation of a Metal Contact with a Tunneling Layer 2012 ·Energy Procedia ·(unknown), (unknown), Frédéric Dross, Monica Alemán, Twan Bearda, Barry O’Sullivan, Ivan Gordon, Jef Poortmans	35
19	Improving workfunction control of metal gate electrodes 2006 ·Solid State Technology ·L. Pantisano, T. Schram, Marc Heyns, Barry O’Sullivan, Stefan De Gendt, G. Groeseneken	7
20	Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source 2000 ·Applied Physics A ·Jinyu Zhang, Ian W. Boyd, M.B. Mooney, Paul K. Hurley, (unknown), Barry O’Sullivan, P.V. Kelly, (unknown), J.P. Sénateur, Carmen Jiménez, (unknown)	14

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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