Barry O’Sullivan

1.5k total citations
109 papers, 1.1k citations indexed

About

Barry O’Sullivan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Barry O’Sullivan has authored 109 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 107 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in Barry O’Sullivan's work include Semiconductor materials and devices (76 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Barry O’Sullivan is often cited by papers focused on Semiconductor materials and devices (76 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Barry O’Sullivan collaborates with scholars based in Belgium, Netherlands and France. Barry O’Sullivan's co-authors include B. Kaczer, D. Linten, Paul K. Hurley, Tibor Grasser, J.P. Sénateur, Ian W. Boyd, Michael Waltl, G. Rzepa, Marc Heyns and Carmen Jiménez and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Barry O’Sullivan

101 papers receiving 1.0k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Barry O’Sullivan 970 333 188 99 63 109 1.1k
Lars‐Åke Ragnarsson 1.3k 1.4× 217 0.7× 134 0.7× 71 0.7× 66 1.0× 97 1.4k
Wataru Mizubayashi 1.4k 1.4× 287 0.9× 235 1.3× 165 1.7× 74 1.2× 140 1.4k
Steven Consiglio 729 0.8× 419 1.3× 98 0.5× 61 0.6× 138 2.2× 78 824
Prashant Majhi 1.3k 1.3× 275 0.8× 357 1.9× 275 2.8× 77 1.2× 94 1.4k
P. Ranade 1.3k 1.3× 148 0.4× 220 1.2× 147 1.5× 47 0.7× 36 1.3k
Howard R. Huff 1.1k 1.2× 347 1.0× 201 1.1× 109 1.1× 80 1.3× 92 1.2k
B. Guillaumot 1.1k 1.1× 220 0.7× 114 0.6× 131 1.3× 48 0.8× 65 1.1k
Moonju Cho 1.5k 1.6× 619 1.9× 152 0.8× 48 0.5× 95 1.5× 59 1.6k
J.C. Lee 1.5k 1.5× 294 0.9× 150 0.8× 45 0.5× 108 1.7× 61 1.5k
Douglas W. Barlage 625 0.6× 274 0.8× 137 0.7× 114 1.2× 128 2.0× 67 750

Countries citing papers authored by Barry O’Sullivan

Since Specialization
Citations

This map shows the geographic impact of Barry O’Sullivan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Barry O’Sullivan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Barry O’Sullivan more than expected).

Fields of papers citing papers by Barry O’Sullivan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Barry O’Sullivan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Barry O’Sullivan. The network helps show where Barry O’Sullivan may publish in the future.

Co-authorship network of co-authors of Barry O’Sullivan

This figure shows the co-authorship network connecting the top 25 collaborators of Barry O’Sullivan. A scholar is included among the top collaborators of Barry O’Sullivan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Barry O’Sullivan. Barry O’Sullivan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsai, Meng‐Che, Hao Yu, Yi Yang, et al.. (2025). Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress. IEEE Transactions on Electron Devices. 72(10). 5359–5365.
2.
O’Sullivan, Barry, A. Alian, A. Sibaja-Hernandez, et al.. (2024). DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. 1–9. 1 indexed citations
3.
Yu, Hao, Barry O’Sullivan, Tian‐Li Wu, et al.. (2024). Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs. IEEE Transactions on Electron Devices. 71(12). 7308–7313.
4.
Hsieh, Ping‐Yen, Debiprasad Panda, Barry O’Sullivan, et al.. (2023). Accelerated dark current degradation study of monolithically integrated In 0.2 Ga 0.8 As/GaAs-on-Si nano-ridge photodetectors. IET conference proceedings.. 2023(34). 613–616.
5.
Tyaginov, Stanislav, Barry O’Sullivan, Adrian Chasin, et al.. (2023). Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs. Micromachines. 14(8). 1514–1514. 5 indexed citations
6.
Veloso, A., Geert Eneman, Bjorn Vermeersch, et al.. (2022). Insights into Scaled Logic Devices Connected from Both Wafer Sides. 2022 International Electron Devices Meeting (IEDM). 23.3.1–23.3.4. 4 indexed citations
7.
Strand, Jack, et al.. (2021). Electron trapping in ferroelectric HfO2. Physical Review Materials. 5(3). 21 indexed citations
8.
Ronchi, N., Lars‐Åke Ragnarsson, L. Breuil, et al.. (2021). Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance. 1–2. 2 indexed citations
9.
Spessot, A., R. Ritzenthaler, E. Dentoni Litta, et al.. (2021). 80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications. Japanese Journal of Applied Physics. 60(SB). SBBB06–SBBB06. 7 indexed citations
10.
11.
O’Sullivan, Barry, V. Putcha, V. V. Afanas’ev, et al.. (2020). Defect profiling in FEFET Si:HfO2 layers. Applied Physics Letters. 117(20). 25 indexed citations
12.
Litta, E. Dentoni, R. Ritzenthaler, T. Schram, et al.. (2018). CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits. Japanese Journal of Applied Physics. 57(4S). 04FB08–04FB08. 4 indexed citations
13.
Claeys, Cor, Barry O’Sullivan, A. Veloso, et al.. (2018). Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality. ECS Journal of Solid State Science and Technology. 7(3). Q26–Q32. 8 indexed citations
14.
O’Sullivan, Barry, et al.. (2016). Loss Analysis and Design Optimization of Large-Area High-Efficiency Back-Contacted Silicon Solar Cells. IEEE Journal of Photovoltaics. 6(4). 810–816. 6 indexed citations
15.
Dross, Frédéric, Monica Alemán, Twan Bearda, et al.. (2012). Passivation of a Metal Contact with a Tunneling Layer. Energy Procedia. 21. 75–83. 35 indexed citations
16.
Gordon, Ivan, Barry O’Sullivan, Niels Posthuma, et al.. (2009). Heterojunction emitter for rear junction n-type solar cells. 1457–1460. 1 indexed citations
17.
O’Sullivan, Barry, L. Pantisano, Ph. Roussel, et al.. (2007). Thermal recovery from stress-induced high-κ dielectric film degradation. Journal of Applied Physics. 101(4). 1 indexed citations
18.
Pantisano, L., T. Schram, Marc Heyns, et al.. (2006). Improving workfunction control of metal gate electrodes. Solid State Technology. 49(9). 45–46. 7 indexed citations
19.
Zhang, Jinyu, Ian W. Boyd, M.B. Mooney, et al.. (2000). Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source. Applied Physics A. 70(6). 647–649. 14 indexed citations
20.
O’Sullivan, Barry, et al.. (2000). Interface properties of the Si(100)–SiO2 system formed by rapid thermal oxidation. Microelectronics Reliability. 40(4-5). 645–648. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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