Bastien Douhard

1.6k total citations
67 papers, 1.0k citations indexed

About

Bastien Douhard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Bastien Douhard has authored 67 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in Bastien Douhard's work include Semiconductor materials and devices (34 papers), Silicon and Solar Cell Technologies (20 papers) and Advancements in Semiconductor Devices and Circuit Design (18 papers). Bastien Douhard is often cited by papers focused on Semiconductor materials and devices (34 papers), Silicon and Solar Cell Technologies (20 papers) and Advancements in Semiconductor Devices and Circuit Design (18 papers). Bastien Douhard collaborates with scholars based in Belgium, United States and Netherlands. Bastien Douhard's co-authors include Wilfried Vandervorst, Laurent Houssiau, N. Mine, Roger Loo, H. Bender, Matty Caymax, J. Brison, Marc Heyns, Alexandre Felten and Clément Merckling and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Bastien Douhard

64 papers receiving 986 citations

Peers

Countries citing papers authored by Bastien Douhard

Since Specialization

Citations

This map shows the geographic impact of Bastien Douhard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bastien Douhard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bastien Douhard more than expected).

Fields of papers citing papers by Bastien Douhard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bastien Douhard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bastien Douhard. The network helps show where Bastien Douhard may publish in the future.

Co-authorship network of co-authors of Bastien Douhard

This figure shows the co-authorship network connecting the top 25 collaborators of Bastien Douhard. A scholar is included among the top collaborators of Bastien Douhard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bastien Douhard. Bastien Douhard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Bipolar device fabrication using a scanning tunnelling microscope 2020 ·Nature Electronics ·(unknown), (unknown), Bastien Douhard, Claudia Fleischmann, Andreas Fuhrer	29
2	Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration 2019 ·ECS Journal of Solid State Science and Technology ·Clément Porret, Andriy Hikavyy, (unknown), S. Baudot, Anurag Vohra, Bernardette Kunert, Bastien Douhard, Janusz Bogdanowicz, Marc Schaekers, David Kohen, (unknown), J. Tolle, Lucas Petersen Barbosa Lima, Amir Sammak, Giordano Scappucci, Erik Rosseel, R. Langer, Roger Loo	17
3	Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices 2019 ·physica status solidi (a) ·Clément Porret, Anurag Vohra, (unknown), Andriy Hikavyy, Bastien Douhard, Johan Meersschaut, Janusz Bogdanowicz, Erik Rosseel, Geoffrey Pourtois, R. Langer, Roger Loo	4
4	Characterization of Highly Doped Si:P, Si:As and Si:P:As Epi Layers for Source/Drain Epitaxy 2019 ·ECS Transactions ·Erik Rosseel, (unknown), Clément Porret, Bastien Douhard, Johan Meersschaut, Andriy Hikavyy, Roger Loo, Naoto Horiguchi, Geoffrey Pourtois, (unknown), John Tolle	3
5	The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45% 2017 ·ECS Transactions ·Kurt Wostyn, Lars‐Åke Ragnarsson, T. Schram, Liesbeth Witters, Thierry Conard, Bastien Douhard, Danielle Vanhaeren, Frank Holsteyns, Wilfried Vandervorst, Naoto Horiguchi	1
6	Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode 2017 ·Journal of Crystal Growth ·Salim El Kazzi, A. Alian, Po-Chun Hsu, Anne S. Verhulst, A. Walke, Paola Favia, Bastien Douhard, Wenjie Lu, Jesús A. del Alamo, Nadine Collaert, Clément Merckling	4
7	Influence of Doping and Tunneling Interface Stoichiometry on n+In_0.5Ga_0.5As/p+GaAs_0.5Sb_0.5 Esaki Diode Behavior 2016 ·ECS Transactions ·Salim El Kazzi, (unknown), (unknown), Quentin Smets, L. Desplanque, X. Wallart, Olivier Richard, Bastien Douhard, Anne S. Verhulst, Nadine Collaert, Clément Merckling, Marc Heyns, Aaron Thean	2
8	Self Focusing SIMS: Probing thin film composition in very confined volumes 2016 ·Applied Surface Science ·Alexis Franquet, Bastien Douhard, (unknown), Paola Favia, Thierry Conard, Wilfried Vandervorst	20
9	Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition MaterialVO2 2015 ·Physical Review Letters ·Koen Martens, Jaewoo Jeong, Naga Phani B. Aetukuri, Charles Rettner, Nikhil Shukla, Eugene Freeman, (unknown), F. M. Peeters, Teya Topuria, Philip M. Rice, Alexander Volodin, Bastien Douhard, Wilfried Vandervorst, M. G. Samant, Suman Datta, S. Parkin	33
10	Quantification of group IV alloys in confined structures: the self focusing SIMS approach 2014 ·Alexis Franquet, Bastien Douhard, (unknown), (unknown), J. Demeulemeester, Thierry Conard, Wilfried Vandervorst	1
11	Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors 2014 ·Journal of Applied Physics ·Kuo-Hsing Kao, Anne S. Verhulst, R. Rooyackers, Bastien Douhard, (unknown), H. Bender, Olivier Richard, Wilfried Vandervorst, Eddy Simoen, Andriy Hikavyy, Roger Loo, Kai Arstila, Nadine Collaert, Aaron Thean, Marc Heyns, K. De Meyer	18
12	HF-Last Wet Clean in Combination with a Low Temperature GeH<sub>4</sub>-Assisted HCl <i>In Situ</i> Clean Prior to Si<sub>0.8</sub>Ge<sub>0.2</sub>-on-Si Epitaxial Growth 2014 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Kurt Wostyn, (unknown), Andriy Hikavyy, Roger Loo, Bastien Douhard, Alain Moussa, (unknown), Karine Kenis, Paul Mertens, Frank Holsteyns, Stefan De Gendt, Harald B. Profijt	1
13	Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers 2013 ·ECS Journal of Solid State Science and Technology ·Ruben Lieten, Bastien Douhard, A. Stesmans, M. Jivanescu, J. W. Beeman, Eddy Simoen, (unknown), E. E. Häller, Jean‐Pierre Locquet	1
14	Simulation of the Anneal of Ion Implanted Boron Emitters and the Impact on the Saturation Current Density 2012 ·Energy Procedia ·(unknown), (unknown), (unknown), Bastien Douhard, (unknown), Emanuele Cornagliotti, J. Poortmans, Wilfried Vandervorst	11
15	Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments 2011 ·ECS Transactions ·Benjamin Vincent, Federica Gencarelli, (unknown), Laura Nyns, Olivier Richard, H. Bender, Bastien Douhard, Alain Moussa, Clément Merckling, Liesbeth Witters, Wilfried Vandervorst, Roger Loo, Matty Caymax, Marc Heyns	9
16	Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition 2011 ·Applied Physics Letters ·Benjamin Vincent, Federica Gencarelli, H. Bender, Clément Merckling, Bastien Douhard, Dirch Hjorth Petersen, Ole Hansen, Henrik H. Henrichsen, Johan Meersschaut, Wilfried Vandervorst, Marc Heyns, Roger Loo, Matty Caymax	159
17	Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory 2011 ·IEEE Electron Device Letters ·G. Van den bosch, Gouri Sankar Kar, Pieter Blomme, A. Arreghini, A. Cacciato, L. Breuil, A. De Keersgieter, Vasile Paraschiv, C. Vrancken, Bastien Douhard, Olivier Richard, (unknown), I. Debusschere, Jan Van Houdt	39
18	High performance n-MOS finFET by damage-free, conformal extension doping 2011 ·(unknown), (unknown), S. Hayashi, M. Togo, T. Chiarella, (unknown), Jay Mody, Bastien Douhard, Naoto Horiguchi, B. Mizuno, Mototsugu Ogura, Wilfried Vandervorst	7
19	Polarization Dependence of the C 1s X‐ray Absorption Spectra of Individual Multi‐Walled Carbon Nanotubes 2008 ·Small ·Ebrahim Najafi, Daniel Hernández‐Cruz, Martin Obst, Adam P. Hitchcock, Bastien Douhard, Jean‐Jacques Pireaux, Alexandre Felten	43
20	Molecular depth‐profiling of polycarbonate with low‐energy Cs ⁺ ions 2007 ·Rapid Communications in Mass Spectrometry ·N. Mine, Bastien Douhard, J. Brison, Laurent Houssiau	51

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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