R. Degraeve

15.0k total citations · 2 hit papers
441 papers, 11.2k citations indexed

About

R. Degraeve is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Degraeve has authored 441 papers receiving a total of 11.2k indexed citations (citations by other indexed papers that have themselves been cited), including 432 papers in Electrical and Electronic Engineering, 95 papers in Materials Chemistry and 29 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Degraeve's work include Semiconductor materials and devices (368 papers), Advancements in Semiconductor Devices and Circuit Design (231 papers) and Advanced Memory and Neural Computing (146 papers). R. Degraeve is often cited by papers focused on Semiconductor materials and devices (368 papers), Advancements in Semiconductor Devices and Circuit Design (231 papers) and Advanced Memory and Neural Computing (146 papers). R. Degraeve collaborates with scholars based in Belgium, United Kingdom and United States. R. Degraeve's co-authors include G. Groeseneken, B. Kaczer, M. Jurczak, H.E. Maes, A. Fantini, Ph. Roussel, B. Govoreanu, L. Goux, L. Pantisano and T. Kauerauf and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Applied Physics Letters.

In The Last Decade

R. Degraeve

431 papers receiving 10.8k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

2001 636 citations R. Degraeve et al. profile →
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

1998 513 citations R. Degraeve, G. Groeseneken et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R. Degraeve Belgium	50	10.9k	2.4k	802	593	566	441	11.2k
S.S. Wong United States	48	7.9k 0.7×	2.1k 0.9×	634 0.8×	882 1.5×	566 1.0×	268	9.6k
J. Suñé Spain	43	5.9k 0.5×	1.1k 0.5×	829 1.0×	594 1.0×	407 0.7×	297	6.2k
Ru Huang China	49	9.5k 0.9×	1.7k 0.7×	2.3k 2.9×	415 0.7×	1.1k 1.9×	637	10.6k
Gouri Sankar Kar Belgium	34	3.8k 0.3×	1.5k 0.7×	432 0.5×	1.4k 2.3×	391 0.7×	315	4.6k
Ming‐Jinn Tsai Taiwan	37	5.9k 0.5×	1.7k 0.7×	1.4k 1.7×	216 0.4×	1.4k 2.5×	147	6.2k
Stefan Slesazeck Germany	51	8.5k 0.8×	4.5k 1.9×	551 0.7×	245 0.4×	379 0.7×	199	9.0k
Manuel Le Gallo Switzerland	29	7.9k 0.7×	2.1k 0.9×	1.9k 2.3×	415 0.7×	910 1.6×	80	8.5k
Jinfeng Kang China	45	9.1k 0.8×	2.1k 0.9×	2.7k 3.3×	269 0.5×	1.7k 3.0×	331	9.8k
Myoung‐Jae Lee South Korea	43	9.6k 0.9×	3.6k 1.5×	2.0k 2.5×	342 0.6×	3.3k 5.9×	163	10.6k
Dirk J. Wouters Belgium	41	4.8k 0.4×	1.9k 0.8×	991 1.2×	200 0.3×	855 1.5×	242	5.3k

Countries citing papers authored by R. Degraeve

Since Specialization

Citations

This map shows the geographic impact of R. Degraeve's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Degraeve with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Degraeve more than expected).

Fields of papers citing papers by R. Degraeve

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Degraeve. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Degraeve. The network helps show where R. Degraeve may publish in the future.

Co-authorship network of co-authors of R. Degraeve

This figure shows the co-authorship network connecting the top 25 collaborators of R. Degraeve. A scholar is included among the top collaborators of R. Degraeve based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Degraeve. R. Degraeve is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Degraeve, R., et al.. (2025). RTNinja : A generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices. Lirias (KU Leuven). 3(4).

Fang, Yu, Ivan Ciofi, Philippe Roussel, et al.. (2025). Three-Dimensional Modeling of BEOL TDDB: Variability Specs for Sub-20 nm Half-Pitch Interconnects. IEEE Transactions on Electron Devices. 72(5). 2165–2172.

Garbin, Daniele, Sergiu Clima, R. Degraeve, et al.. (2025). Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory. IEEE Journal of the Electron Devices Society. 13. 362–365.

Franco, J., Hiroaki Arimura, Jean‐François de Marneffe, et al.. (2024). Low Thermal Budget Multi-V_th RMG Solution with Excellent TDDB and BTI Reliability by Combining Hydrogen Radical IL Treatment, n-Dipole-First Shifter and Low-Temperature HK PDA. 1–4. 2 indexed citations

Diaz-Fortuny, J., et al.. (2024). Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. 4C.1–1. 2 indexed citations

Degraeve, R., Daniele Garbin, Sergiu Clima, et al.. (2024). Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. Lirias (KU Leuven). 7A.5–1. 6 indexed citations

Diaz-Fortuny, J., Benedikt Gierlichs, R. Degraeve, et al.. (2024). Unveiling the Vulnerability of Oxide-Breakdown-Based PUF. IEEE Electron Device Letters. 45(5). 750–753. 3 indexed citations

Diaz-Fortuny, J., et al.. (2024). An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage. Micromachines. 15(6). 769–769. 2 indexed citations

Kumar, Ankit, R. Degraeve, A. Fantini, et al.. (2023). Fault Attack Investigation on TaO_x Resistive-RAM for Cyber Secure Application. IEEE Transactions on Electron Devices. 70(8). 4170–4177. 1 indexed citations

10.

Garbin, Daniele, A. Fantini, R. Degraeve, et al.. (2023). Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition. physica status solidi (RRL) - Rapid Research Letters. 17(8). 12 indexed citations

11.

Bury, E., et al.. (2019). A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE Journal of Solid-State Circuits. 54(10). 2765–2776. 57 indexed citations

12.

Goux, L., A. Fantini, R. Degraeve, et al.. (2015). Engineering of a TiN\Al<inf>2</inf>O<inf>3</inf>\(Hf, Al)O<inf>2</inf>\Ta<inf>2</inf>O<inf>5</inf>\Hf RRAM cell for fast operation at low current. 262–265. 1 indexed citations

13.

Redolfi, A., R. Degraeve, D. Crotti, et al.. (2014). Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopants. 1–2. 29 indexed citations

14.

Degraeve, R., A. Fantini, Nagarajan Raghavan, et al.. (2013). Modeling RRAM set/reset statistics resulting in guidelines for optimized operation. Symposium on VLSI Technology. 17 indexed citations

15.

Islam, Ahmad E., et al.. (2011). Experimental identification of unique oxide defect regions by characteristic response of charge pumping. 3A.5.1–3A.5.6. 5 indexed citations

16.

Goux, L., R. Degraeve, B. Govoreanu, et al.. (2011). Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells. Symposium on VLSI Technology. 24–25. 4 indexed citations

17.

Kaczer, B., et al.. (2004). Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's. 79–83. 13 indexed citations

18.

Kerber, A., E. Cartier, R. Degraeve, et al.. (2003). Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes. Microelectronic Engineering. 50(5). 1261–1269. 46 indexed citations

19.

Degraeve, R., et al.. (1999). Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability. 59–60. 49 indexed citations

20.

Depas, Michel, et al.. (1997). Reliability of Ultra-Thin Gate Oxide Below 3nm in the Direct Tunneling Regime. 36(3). 1602–1608. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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