Hag‐Ju Cho

1.8k total citations
46 papers, 1.5k citations indexed

About

Hag‐Ju Cho is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hag‐Ju Cho has authored 46 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hag‐Ju Cho's work include Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Piezoelectric Materials (15 papers). Hag‐Ju Cho is often cited by papers focused on Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Piezoelectric Materials (15 papers). Hag‐Ju Cho collaborates with scholars based in South Korea, United States and Belgium. Hag‐Ju Cho's co-authors include Cheol Seong Hwang, Chang Seok Kang, Sang In Lee, Moon Yong Lee, Soon Oh Park, Hideki Horii, Byong‐Taek Lee, Rino Choi, Ho-Kyu Kang and R. Nieh and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Hag‐Ju Cho

46 papers receiving 1.5k citations

Peers

Hag‐Ju Cho
Tso‐Ping Ma United States
Koeng Su Lim South Korea
Hideki Horii South Korea
Moon Yong Lee South Korea
Hag‐Ju Cho
Citations per year, relative to Hag‐Ju Cho Hag‐Ju Cho (= 1×) peers Joseph Ya‐min Lee

Countries citing papers authored by Hag‐Ju Cho

Since Specialization
Citations

This map shows the geographic impact of Hag‐Ju Cho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hag‐Ju Cho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hag‐Ju Cho more than expected).

Fields of papers citing papers by Hag‐Ju Cho

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hag‐Ju Cho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hag‐Ju Cho. The network helps show where Hag‐Ju Cho may publish in the future.

Co-authorship network of co-authors of Hag‐Ju Cho

This figure shows the co-authorship network connecting the top 25 collaborators of Hag‐Ju Cho. A scholar is included among the top collaborators of Hag‐Ju Cho based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hag‐Ju Cho. Hag‐Ju Cho is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ragnarsson, Lars‐Åke, Vincent S. Chang, H.Y. Yu, et al.. (2007). Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates. IEEE Electron Device Letters. 28(6). 486–488. 28 indexed citations
2.
Li, Zilan, T. Schram, T. Witters, et al.. (2007). Investigation on Molybdenum and Its Conductive Oxides as p-type Metal Gate Candidates. ECS Transactions. 11(4). 575–583. 3 indexed citations
3.
Xianyu, W. X., et al.. (2006). Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature. IEICE Transactions on Electronics. E89-C(10). 1460–1464. 1 indexed citations
4.
Choi, Jungdal, Changseok Kang, Chang Hyun Lee, et al.. (2006). A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs. 327–330. 39 indexed citations
5.
Cho, Hag‐Ju, et al.. (2005). Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition. Japanese Journal of Applied Physics. 44(4S). 2230–2230. 4 indexed citations
6.
Choi, Rino, K. Onishi, R. Nieh, et al.. (2003). High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode. 193–194. 1 indexed citations
7.
Nieh, R., S. Krishnan, Hag‐Ju Cho, et al.. (2003). Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices. 186–187. 12 indexed citations
8.
Choi, Rino, K. Onishi, Chang Seok Kang, et al.. (2003). Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics. IEEE Electron Device Letters. 24(3). 144–146. 20 indexed citations
9.
Onishi, K., Chang Seok Kang, Rino Choi, et al.. (2003). Charging effects on reliability of HfO/sub 2/ devices with polysilicon gate electrode. 419–420. 4 indexed citations
10.
Hwang, Cheol Seong, et al.. (1998). Effect of  O 2 Addition on the Deposition of Pt Thin Films by Metallorganic Chemical Vapor Deposition. Journal of The Electrochemical Society. 145(3). 1066–1069. 21 indexed citations
11.
Hwang, Cheol Seong, Byong‐Taek Lee, Chang Seok Kang, et al.. (1998). A comparative study on the electrical conduction mechanisms of (Ba[sub 0.5]Sr[sub 0.5])TiO[sub 3] thin films on Pt and IrO[sub 2] electrodes. 13 indexed citations
12.
Hwang, Cheol Seong, Byong‐Taek Lee, Chang Seok Kang, et al.. (1998). A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes. Journal of Applied Physics. 83(7). 3703–3713. 151 indexed citations
13.
Lee, Ki Hoon, Cheol Seong Hwang, Byong‐Taek Lee, et al.. (1997). Variation of Electrical Conduction Phenomena of Pt/ (Ba, Sr)TiO3/Pt Capacitors by Different Top Electrode Formation Processes. Japanese Journal of Applied Physics. 36(9S). 5860–5860. 20 indexed citations
14.
Cho, Hag‐Ju, Chang Seok Kang, Cheol Seong Hwang, et al.. (1997). Improvement of leakage current characteristics of Ba0.5Sr0.5TiO3 films by N2O plasma surface treatment. Applied Physics Letters. 71(22). 3221–3223. 31 indexed citations
15.
Hwang, Cheol Seong, Byong‐Taek Lee, Hag‐Ju Cho, et al.. (1997). A positive temperature coefficient of resistivity effect from a paraelectric Pt/(Ba0.5,Sr0.5)TiO3/IrO2 thin-film capacitor. Applied Physics Letters. 71(3). 371–373. 27 indexed citations
16.
Cho, Hag‐Ju, Chang Seok Kang, Cheol Seong Hwang, et al.. (1997). Improvement of leakage current characteristics of Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] films by N[sub 2]O plasma surface treatment. 1 indexed citations
17.
Hwang, Cheol Seong, Chang Seok Kang, Hag‐Ju Cho, et al.. (1996). Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD). Integrated ferroelectrics. 12(2-4). 199–213. 12 indexed citations
18.
Park, Soon Oh, et al.. (1996). Fabrication and Electrical Characterization of Pt/(Ba,Sr)TiO3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications. Japanese Journal of Applied Physics. 35(2S). 1548–1548. 62 indexed citations
19.
Hwang, Cheol Seong, et al.. (1995). Deposition and Electrical Characterization of Very Thin SrTiO3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application. Japanese Journal of Applied Physics. 34(9S). 5178–5178. 73 indexed citations
20.
Jo, William, et al.. (1992). Structural and Electro-Optic Properties of Laser-Ablated Ferroelectric Bi4Ti3O12 Thin Films. MRS Proceedings. 285. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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