H. Reisinger

5.5k total citations
136 papers, 4.3k citations indexed

About

H. Reisinger is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Reisinger has authored 136 papers receiving a total of 4.3k indexed citations (citations by other indexed papers that have themselves been cited), including 131 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Reisinger's work include Semiconductor materials and devices (126 papers), Advancements in Semiconductor Devices and Circuit Design (106 papers) and Integrated Circuits and Semiconductor Failure Analysis (60 papers). H. Reisinger is often cited by papers focused on Semiconductor materials and devices (126 papers), Advancements in Semiconductor Devices and Circuit Design (106 papers) and Integrated Circuits and Semiconductor Failure Analysis (60 papers). H. Reisinger collaborates with scholars based in Germany, Austria and Belgium. H. Reisinger's co-authors include Tibor Grasser, Wolfgang Gustin, B. Kaczer, Christian Schlünder, P.-J. Wagner, Thomas Aichinger, Wolfgang Goes, J. Franco, F. Schanovsky and Katja Puschkarsky and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Reisinger

133 papers receiving 4.2k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
H. Reisinger 4.1k 552 448 163 104 136 4.3k
Chenming Hu 3.3k 0.8× 551 1.0× 330 0.7× 288 1.8× 42 0.4× 65 3.4k
T. Ghani 2.1k 0.5× 481 0.9× 359 0.8× 447 2.7× 40 0.4× 33 2.3k
Digh Hisamoto 3.0k 0.7× 366 0.7× 297 0.7× 575 3.5× 37 0.4× 85 3.1k
Chenming Hu 1.9k 0.5× 260 0.5× 242 0.5× 254 1.6× 37 0.4× 64 2.0k
A. Veloso 2.0k 0.5× 287 0.5× 557 1.2× 501 3.1× 109 1.0× 219 2.3k
Naoto Horiguchi 3.5k 0.9× 541 1.0× 829 1.9× 590 3.6× 40 0.4× 393 3.8k
S. Tiwari 2.0k 0.5× 714 1.3× 866 1.9× 371 2.3× 91 0.9× 92 2.2k
G. Reimbold 2.1k 0.5× 326 0.6× 275 0.6× 258 1.6× 95 0.9× 214 2.2k
S. Biesemans 2.4k 0.6× 278 0.5× 736 1.6× 326 2.0× 27 0.3× 171 2.5k
Nobuyuki Sugii 2.0k 0.5× 791 1.4× 380 0.8× 296 1.8× 364 3.5× 246 2.4k

Countries citing papers authored by H. Reisinger

Since Specialization
Citations

This map shows the geographic impact of H. Reisinger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Reisinger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Reisinger more than expected).

Fields of papers citing papers by H. Reisinger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Reisinger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Reisinger. The network helps show where H. Reisinger may publish in the future.

Co-authorship network of co-authors of H. Reisinger

This figure shows the co-authorship network connecting the top 25 collaborators of H. Reisinger. A scholar is included among the top collaborators of H. Reisinger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Reisinger. H. Reisinger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grasser, Tibor, H. Reisinger, Dominic Waldhoer, et al.. (2024). A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. 3B.1–1. 2 indexed citations
2.
Feil, Maximilian W., H. Reisinger, Thomas Aichinger, et al.. (2024). Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs. Physical Review Applied. 22(2).
3.
Feil, Maximilian W., H. Reisinger, Thomas Aichinger, et al.. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental. IEEE Transactions on Electron Devices. 71(7). 4210–4217. 6 indexed citations
4.
Grasser, Tibor, Maximilian W. Feil, H. Reisinger, et al.. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling. IEEE Transactions on Electron Devices. 71(7). 4218–4226. 3 indexed citations
5.
Feil, Maximilian W., H. Reisinger, Thomas Aichinger, et al.. (2023). Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors. Communications Engineering. 2(1). 9 indexed citations
6.
Feil, Maximilian W., H. Reisinger, Gerald Rescher, et al.. (2023). On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs. Materials science forum. 1092. 109–117. 10 indexed citations
7.
Feil, Maximilian W., H. Reisinger, Thomas Aichinger, et al.. (2023). Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. 1–10. 20 indexed citations
8.
Schleich, Christian, Dominic Waldhoer, Maximilian W. Feil, et al.. (2021). Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies. IEEE Transactions on Electron Devices. 68(8). 4016–4021. 26 indexed citations
9.
10.
Feil, Maximilian W., Katja Puschkarsky, Christian Schleich, et al.. (2020). The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters. Crystals. 10(12). 1143–1143. 10 indexed citations
11.
Jech, Markus, H. Reisinger, Stanislav Tyaginov, et al.. (2020). Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G, V D} Bias Space: Implications and Peculiarities. IEEE Transactions on Electron Devices. 67(8). 3315–3322. 25 indexed citations
12.
Feil, Maximilian W., Katja Puschkarsky, Wolfgang Gustin, H. Reisinger, & Tibor Grasser. (2020). On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices. IEEE Transactions on Electron Devices. 68(1). 236–243. 9 indexed citations
13.
Maas, S.A., H. Reisinger, Thomas Aichinger, & Gerald Rescher. (2020). Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. 1–6. 16 indexed citations
14.
Puschkarsky, Katja, et al.. (2019). Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques. IEEE Transactions on Device and Materials Reliability. 19(2). 358–362. 7 indexed citations
15.
Puschkarsky, Katja, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, & H. Reisinger. (2019). Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability. IEEE Transactions on Electron Devices. 66(11). 4604–4616. 147 indexed citations
16.
Puschkarsky, Katja, et al.. (2019). An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps. IEEE Transactions on Electron Devices. 66(11). 4623–4630. 9 indexed citations
17.
Jech, Markus, Katja Puschkarsky, Michael Waltl, et al.. (2018). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental. IEEE Transactions on Electron Devices. 66(1). 232–240. 20 indexed citations
18.
Puschkarsky, Katja, H. Reisinger, Thomas Aichinger, Wolfgang Gustin, & Tibor Grasser. (2017). Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation. 1–5. 30 indexed citations
19.
Grasser, Tibor, K. Rott, H. Reisinger, et al.. (2014). A unified perspective of RTN and BTI. 4A.5.1–4A.5.7. 75 indexed citations
20.
Kaczer, B., Tibor Grasser, Ph. Roussel, et al.. (2010). Origin of NBTI variability in deeply scaled pFETs. 26–32. 250 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Chenming Hu Breakdown of academic impact, for papers by T. Ghani Breakdown of academic impact, for papers by Digh Hisamoto Breakdown of academic impact, for papers by Chenming Hu Breakdown of academic impact, for papers by A. Veloso Breakdown of academic impact, for papers by Naoto Horiguchi Breakdown of academic impact, for papers by S. Tiwari Breakdown of academic impact, for papers by G. Reimbold Breakdown of academic impact, for papers by S. Biesemans Breakdown of academic impact, for papers by Nobuyuki Sugii
Rankless by CCL
2026