Laura Nyns

1.2k total citations
75 papers, 801 citations indexed

About

Laura Nyns is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Laura Nyns has authored 75 papers receiving a total of 801 indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Electrical and Electronic Engineering, 31 papers in Materials Chemistry and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Laura Nyns's work include Semiconductor materials and devices (66 papers), Ferroelectric and Negative Capacitance Devices (27 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Laura Nyns is often cited by papers focused on Semiconductor materials and devices (66 papers), Ferroelectric and Negative Capacitance Devices (27 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Laura Nyns collaborates with scholars based in Belgium, United States and Netherlands. Laura Nyns's co-authors include Sven Van Elshocht, Annelies Delabie, Stefan De Gendt, Matty Caymax, Marc Heyns, Johan Swerts, Thierry Conard, Alexis Franquet, Christoph Adelmann and Chris Vinckier and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Laura Nyns

72 papers receiving 774 citations

Peers

Countries citing papers authored by Laura Nyns

Since Specialization

Citations

This map shows the geographic impact of Laura Nyns's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Laura Nyns with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Laura Nyns more than expected).

Fields of papers citing papers by Laura Nyns

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Laura Nyns. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Laura Nyns. The network helps show where Laura Nyns may publish in the future.

Co-authorship network of co-authors of Laura Nyns

This figure shows the co-authorship network connecting the top 25 collaborators of Laura Nyns. A scholar is included among the top collaborators of Laura Nyns based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Laura Nyns. Laura Nyns is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Proximity Effects during GeTe Area-Selective Deposition by Atomic Layer Deposition: Nanopattern Induced Thickness Profile Alteration 2026 ·Chemistry of Materials ·(unknown), (unknown), (unknown), Laura Nyns, Gregory N. Parsons, (unknown)	0
2	Ab Initio Insights into the Reactivity of Precursors in Atomic Layer Deposition: A Case Study of GeAsSe 2025 ·The Journal of Physical Chemistry C ·(unknown), Geoffrey Pourtois, Laura Nyns, Sergiu Clima, (unknown), Annelies Delabie	0
3	Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility 2025 ·Applied Surface Science ·(unknown), (unknown), Pradyumna Kumar Parida, (unknown), Hyuncheol Kim, Olivier Richard, Paola Favia, Attilio Belmonte, Annelies Delabie, Laura Nyns, Gouri Sankar Kar, Jan Van Houdt, M. Popovici	0
4	Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density 2024 ·physica status solidi (RRL) - Rapid Research Letters ·(unknown), Daniele Garbin, A. Fantini, R. Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Goedele Potoms, (unknown), Laura Nyns, Jan Van Houdt, Valeri Afanas’ev, Attilio Belmonte, Gouri Sankar Kar	9
5	Substrate induced composition change during Ge2Sb2Te5 atomic layer deposition and study of initial reactions on SiO2 surface 2024 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), Laura Nyns, Annelies Delabie	1
6	First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices 2021 ·Symposium on VLSI Technology ·(unknown), L. Breuil, (unknown), Filip Schleicher, Farid Sebaai, Yusuke Oniki, (unknown), A. Arreghini, Laura Nyns, Jean-Philippe Soulié, (unknown), G. Van den bosch, M. Rosmeulen	4
7	A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, and <inline-formula> <tex-math notation="LaTeX">${G}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula> Measurements 2019 ·IEEE Transactions on Electron Devices ·Andrea Padovani, B. Kaczer, Milan Pešić, Attilio Belmonte, M. Popovici, Laura Nyns, Dimitri Linten, Valeri Afanas’ev, (unknown), (unknown), (unknown), Luca Larcher	34
8	Impact of SiON tunnel layer composition on 3D NAND cell performance 2019 ·L. Breuil, Laura Nyns, Kaustuv Banerjee, (unknown), A. Subirats, Olivier Richard, Thierry Conard, G. Van den bosch, A. Furnémont	10
9	First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf<inf>1</inf>-<inf>x</inf>Zr<inf>x</inf>O2 for FEFET Applications 2018 ·Sergiu Clima, S. R. C. McMitchell, Karine Florent, Laura Nyns, M. Popovici, N. Ronchi, Luca Piazza, Jan Van Houdt, Geoffrey Pourtois	8
10	Record mobility (μ<inf>eff</inf> ∼3100 cm²/V-s) and reliability performance (V<inf>ov</inf>∼0.5V for 10yr operation) of In<inf>0.53</inf>Ga<inf>0.47</inf>As MOS devices using improved surface preparation and a novel interfacial layer 2016 ·Abhitosh Vais, A. Alian, Laura Nyns, J. Franco, Sonja Sioncke, V. Putcha, Hao Yu, Y. Mols, R. Rooyackers, Dennis Lin, Jan Willem Maes, Qi Xie, Michael Givens, (unknown), Xiaoqiang Jiang, A. Mocuta, Nadine Collaert, K. De Meyer, Aaron Thean	7
11	Atomic layer deposition of scandium‐based oxides 2013 ·physica status solidi (a) ·Laura Nyns, J. G. Lisoni, G. Van den bosch, Sven Van Elshocht, Jan Van Houdt	18
12	The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance 2012 ·Journal of Applied Physics ·Koen Martens, Iuliana Radu, S. Mertens, Xiaodong Shi, Laura Nyns, Stefan Cosemans, Paola Favia, H. Bender, Thierry Conard, Marc Schaekers, Stefan De Gendt, V. V. Afanas’ev, J. A. Kittl, Marc Heyns, M. Jurczak	47
13	TDEAH/TDEAZとH 2 Oを用いたALD HfZrO x の開発 2011 ·Journal of The Electrochemical Society ·(unknown), Hilde Tielens, Shinji Takeoka, (unknown), Laura Nyns, Christoph Adelmann, Annelies Delabie, T. Schram, Lars‐Åke Ragnarsson, (unknown), L. Daté, R. Schreutelkamp, Sven Van Elshocht	8
14	Fundamental study of atomic layer deposition in and on porous low-k films 2011 ·Patrick Verdonck, Annelies Delabie, Johan Swerts, (unknown), Mikhaı̈l R. Baklanov, Hilde Tielens, Els Van Besien, J. Witters, Laura Nyns, Sven Van Elshocht	2
15	Investigation of the Electrical Properties of Ge/High-k Gate Stack: GeO<sub>2</sub> VS Si-cap 2011 ·Jérôme Mitard, Florence Bellenger, (unknown), Brice De Jaeger, Benjamin Vincent, Laura Nyns, Koen Martens, Evi Vrancken, (unknown), Dennis Lin, Roger Loo, (unknown), K. De Meyer, Marc Heyns, Naoto Horiguchi	2
16	Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N[sub 2]/O[sub 2] Supply Ratio in Ozone Generation 2010 ·Electrochemical and Solid-State Letters ·Annelies Delabie, Matty Caymax, (unknown), Jan Willem Maes, Laura Nyns, M. Popovici, Johan Swerts, Hilde Tielens, Jozef Peeters, Sven Van Elshocht	15
17	High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology 2010 ·IEEE Electron Device Letters ·Florence Bellenger, Brice De Jaeger, Clément Merckling, Michel Houssa, J. Penaud, Laura Nyns, Evi Vrancken, Matty Caymax, Marc Meuris, Thomas Hoffmann, K. De Meyer, Marc Heyns	49
18	Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics 2008 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Sven Van Elshocht, Christoph Adelmann, Thierry Conard, Annelies Delabie, Alexis Franquet, Laura Nyns, Olivier Richard, P. Lehnen, Johan Swerts, Stefan De Gendt	34
19	Impact of Hf-Precursor Choice on Scaling and Performance of High-k Gate Dielectrics 2007 ·ECS Transactions ·Jan Willem Maes, Yanina Fedorenko, Annelies Delabie, (unknown), Johan Swerts, Laura Nyns, Sven Van Elshocht, (unknown), G. D. Wilk	5
20	Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces 2007 ·ECS Transactions ·Laura Nyns, (unknown), Lindsey Hall, Annelies Delabie, Marc Heyns, Sven Van Elshocht, Chris Vinckier, Paul Zimmerman, Stefan De Gendt	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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